• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.269-274
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• 2004

Current delivery system, in which the analog current produced by a unique DAC circuit is stored into a current-memory circuit and delivered in a time-divided sequence, shows variation of output current as low as 4% in a current source data-driver IC for AM-OLED driven by a current-programmed method without any fuse repairing after fabrication. This driver IC has 54 outputs and can sink constant current as low as 3 ${\mu}A$ with 6-bit analog levels. Such a low current level without variation can hardly be obtained by an ordinary MOS transistor because the current level is in the sub-threshold region and changes exponentially with threshold voltage variation. Thus we adopted a current mirror circuit composed of bipolar transistors to supply well-controlled current within a nano-ampere range.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.569-572
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• 2004

This paper presents a 12-Bit 250MHz CMOS current-mode Digital to Analog Converter(DAC) with current scalers and dividers. It consist of 4 MSB current scaler, 4 MLSB current divider, and 4 LSB current divider. The simulation results show a conversion rate of 250MHz, DNL/INL of ${\pm}5LSB/{\pm}7LSB$, die area of $0.55mm^2$ and Power dissipation of 27mW at 3.3V

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.363-369
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• 2017

Phase-change random access memory (PRAM) has been emerged as a potential memory due to its excellent scalability, non-volatility, and random accessibility. But, as the cell current is reducing due to cell size scaling, the read-sensing window margin is also decreasing due to increased variation of cell performance distribution, resulting in a substantial loss of yield. To cope with this problem, a novel adaptive read-sensing reference current generation scheme is proposed, whose trimming range and resolution are adaptively controlled depending on process conditions. Performance evaluation in a 58-nm CMOS process indicated that the proposed read-sensing reference current scheme allowed the integral nonlinearity (INL) to be improved from 10.3 LSB to 2.14 LSB (79% reduction), and the differential nonlinearity (DNL) from 2.29 LSB to 0.94 LSB (59% reduction).

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.276-281
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• 2010

A 2.5 V feed-forward second-order deltasigma modulator for audio application is presented. A 9-level quantizer with a tree-structured dynamic element matching (DEM) was employed to improve the linearity by shaping the distortion resulted from the capacitor mismatch of the feedback digital-toanalog converter (DAC). A chopper stabilization technique (CHS) is used to reduce the flicker noise in the first integrator. The prototype delta-sigma analogto-digital converter (ADC) implemented in a 65 nm 1P8M CMOS process occupies 0.747 $mm^2$ and achieves 109.1 dB dynamic range (DR), 85.4 dB signal-to-noise ratio (SNR) in a 24 kHz audio signal bandwidth, while consuming 14.75 mW from a 2.5 V supply.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.606-608
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• 2006

This paper describes a 8bit 10MS/s low power pipelined analog-to-digital converter(ADC). To reduce power consumption in proposed ADC, a high gain op-amp that consumes large power in MDAC(multiplying DAC) of conventional pipelined ADC is replaced with simple comparator and current sources. Moreover, differential charge transfer amplifier technique with latch in the sub-ADC reduces the power consumption to less than half compared with the conventional sub-ADC which use high speed comparator. The proposed ADC shows the power consumption of 1.8mW at supply voltage of 1.8V. This proposed ADC is suitable to apply to the portable display device. The circuit was implemented with 0.18um CMOS technology and the core size of circuit is 2.5mm${\times}$1mm.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.951-954
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• 2003

본 논문에서는 고속. 저전력에 적합한 개방 구조를 갖는 8-비트 500Msmaples/s 2-Step ADC 를 제안하였다. 500Msmaples/s 의 고속 동작을 위해서 기존의 M-DAC을 이용한 폐쇄 구조 대신 개방형 구조를 사용하였다. 이와 더불어 저전력을 구현하기 위해서 analog-latch 를 제안하여 동적 동작을 수행시킴으로써 전력 소모를 줄였으며 , mux 의 구현 시 reset switch를 이용하여 로딩 시간을 개선함으로써 high-speed 에 적합하도록 설계하였다. 제안된 ADC 는 1-poly 6-metal 0.18um CMOS 공정을 이용하였으며 1.8V 전원 전압을 이용하여 250mW 의 전력을 소모하며 500M 샘플링 주파수에서 120MHz 신호 입력 시 7.6 비트의 ENOB를 얻을 수 있었다.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.895-898
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• 2003

본 논문에서는 휴대폰에 사용하는 리튬-이론 배터리(Li-Ion battery)를 충전하기 위한 충전 IC 의 설계에 대해서 기술한다. 정전류(Constant Current)/ 정전압 (Constant Voltage) 방식을 이용하여 리튬-이론 배터리를 충전을 하였다. 이 충전 과정을 제어하기 위해서 일반적으로 사용되는 ADC, DAC 와 MICOM 을 사용하지 않고, hardwired control logic 을 이용하여 적은 면적을 가지고도 기존의 충전 과정을 수행하도록 하였다. 충전 IC 외부에 사용되는 저항들을 내부에 집적하여 사용하는 부품의 수를 현저히 줄였다. 충전기와 리튬-이온 배터리를 연결하는 선(wire)로 저항에 의한 전압강하(voltage drop)를 외부에서 보상할 수 있도록하여 리튬-이온 배터리가 가장 안정적인 전압인 4.2 V로 충전 될 수 있도록 하였다. 외부 온도 검사 블록에서 저항을 이용한 전압 분배를 사용하지 않고, 정전류원을 이용하여 외부 온도 변화를 측정할 수 있도록 하였다. 리튬-이온 배터가 전정류와 정전압으로 4.2 V로 충전 되었으며, 충전 IC 의 소비 전력은 37 mW(analog part)이다. 충전 IC는 0.6 ㎛ standard CMOS 공정을 이용하여 설계하였다.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.53 no.9
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• pp.650-656
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• 2004

This paper presents block and timing diagrams of the DWA(data weighted averaging) to optimize a feedback time delay of the sigma-delta modulator. Through the Matlab modeling, the optimized coefficients of the integrators are obtained to design the modulator. And then the fully differential SC integrators, feedback DAC, 9-level quantizer, and DWA are designed by considering the nonideal characteristics of the modulator. The designed second-order multibit modulator is fabricated in a 0.35$\mu\textrm{m}$ CMOS process. The designed modulator achieves 73dB signal-to-noise ratio and 72dB dynamic range at 1.2Vp-p 585kHz input singal and 52.8MHz sampling frequency.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.777-780
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• 2005

모바일 오디오 적용을 위한 저전력 ${\Sigma}{\Delta}$ Modulator 에 대한 설계와 layout 을 보였다. 전체 구조는 3 차 단일 피드백 루프이며, 해상도는 16bit 을 갖는다. 샘플링 주파수에 따른 Over-sampling Ratio 는 128(46kHz) 또는 64(96kHz) 가 되도록 하였다. 차동 구조를 사용한 3 차 ${\Sigma}{\Delta}$ modulator 내의 적분기에 사용된 Op-Amp 는 DC-Gain 을 높이기 위해서 Gain-boosting 기법이 적용되었다. ${\Sigma}{\Delta}$ modulator 의 기준 전압은 전류 모드 Band-Gap Reference 회로에서 공급이 되며, PVT(Process, Voltage, Temperature) 변화에 따른 기준 전압의 편차를 보정하기 위하여, binary 3bit 으로 선택하도록 하였다. DAC 에서 사용되는 단위 커패시터의 mismatch 에 의한 성능 감소를 막기 위해, DAC 신호의 경로를 임의적으로 바꿔주는 scrambler 회로를 이용하였다. 4bit Quantizer 내부의 비교기 회로는 고해상도를 갖도록 설계하였고, 16bit thermometer code 에서 4bit binary code 변환시 발생하는 에러를 줄이기 위해 thermometer-to-gray, gray-to-binary 인코딩 방법을 적용하였다. 0.18um CMOS standard logic 공정 내 thick oxide transistor(3.3V supply) 공정을 이용하였다. 입력 전압 범위는 2.2Vp-p,diff. 이며, Typical process, 3.3V supply, 50' C 시뮬레이션 조건에서 2Vpp,diff. 20kHz sine wave 를 입력으로 할 때 SNR 110dB, THD 는 -95dB 이상의 성능을 보였고, 전류 소모는 6.67mA 이다. 또한 전체 layout 크기는 가로 1100um, 세로 840um 이다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.11
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• pp.9-16
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• 2005

This paper proposes a programmable PLL (phase locked loop) based clock generator supporting a wide-range-frequency input and output for high performance and low power SoC with multiple clock frequencies domains. The propose system reduces the locking time and obtains a wide range operation frequency by using a dual-charge pumps scheme. For low power operation of a chip, the locking processing circuits of the proposed PLL doesn't be working in the standby mode but the locking data are retained by the DAC. Also, a tracking ADC is designed for the fast relocking operation after stand-by mode exit. The programmable output frequency selection's circuit are designed for supporting a optimized DFS operation according to job tasks. The proposed PLL-based clock system has a relock time range of $0.85{\mu}sec{\sim}1.3{\mu}sec$($24\~26$cycle) with 2.3V power supply, which is fabricated on $0.35{\mu}m$ CMOS Process. At power-down mode, PLL power saves more than $95\%$ of locking mode. Also, the PLL using programmable divider has a wide locking range ($81MHz\~556MHz$) for various clock domains on a multiple IPs system.