1 |
S. Lai and T. Lowrey, "OUM - A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications," IEDM 2001.
|
2 |
Y. N. Hwang et al., "Full integration and reliability evaluation of phase change RAM based on 0.24 _m CMOS technologies," in Symp. VLSI Technology Dig. Tech. Papers, pp. 173-174, 2003
|
3 |
Y. Shin, "Non-volatile memory technologies for beyond 2010", in Symp. VLSI Circuits Dig. Tech. Papers, pp. 156-159, 2005
|
4 |
J. H. Oh et al., "Full integration of highly manufacturable 512Mb PRAM based on 90nm technology," in IEDM Dig. Tech. Papers, pp. 49, 2006
|
5 |
Kwang-Jin Lee and et al "A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput" IEEE Journal of Solid-State Circuits, pp. 150-162, Jan. 2008
|
6 |
Mu-Hui Park and Bai-Sun Kong, "A highly accurate current bias generator with adaptive resolution control for phase-change random access memory," in ITC-CSCC 2013, pp 287-288, June 2013
|