• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.198-204
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• 2001

In this paper, a 3V 8-bit 200MSPS CMOS folding / interpolation A/D Converter is proposed. It employs an efficient architecture whose FR(Folding Rate) is 8, NFB(Number of Folding Block) is 4, and IR (Interpolating Rate) is 8. For the purpose of improved SNDR by to be low input frequency, distributed track and hold circuits are included. In order to obtain a high speed and low power operation, further, a novel dynamic latch and digital encoder based on a novel delay error correction are proposed. The chip has been fabricated with a 0.35${\mu}{\textrm}{m}$ 2-poly 3-metal n-well CMOS technology. The effective chip area is 1070${\mu}{\textrm}{m}$$\times$650${\mu}{\textrm}{m}$ and it dissipates about 230mW at 3.3V power supply. The INL is within $\pm$1LSB and DNL is within $\pm$1LSB, respectively. The SNDR is about 43㏈, when the input frequency is 10MHz at 200MHz clock frequency.

• Journal of Korea Society of Industrial Information Systems
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• v.22 no.1
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• pp.53-59
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• 2017

This Paper Proposes a New High-speed Design Methodology for Delay Insensitive Asynchronous Circuits Combining with a Pseudo-NMOS Structure used for High Performance in Synchronous Circuits. Null Convention Logic(NCL) of Conventional Delay-Insensitive Asynchronous Design Methodologies has many Advantages of High Reliability, Low Power Consumption, and Easy Design Reuses not Dependant on Semiconductor Technology. However. the Conventional NCL Gates has a Complicated Stack Structure, so it Suffers from Increased Circuit Delay. Therefore, a New NCL Gates and its Pipeline Structure for High Performance, and the Proposed Methodology has been Designed and Evaluated by a $4{\times}4$ Multiplier Designed using SK-Hynix 0.18 um CMOS Technology. The Experimental Results are Compared with a Conventional NCL in Terms of Power and Delay and shows that the Propagation Delay of the Proposed Multiplier is Reduced by 85% Compared with the Conventional NCL Multiplier.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.47-55
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• 2005

This work describes an 8b 240 MS/s CMOS ADC as one of embedded core cells for high-performance displays requiring low power and small size at high speed. The proposed ADC uses externally connected pins only for analog inputs, digital outputs, and supplies. The ADC employs (1) a two-step pipelined architecture to optimize power and chip size at the target sampling frequency of 240 MHz, (2) advanced bootstrapping techniques to achieve high signal bandwidth in the input SHA, and (3) RC filter-based on-chip I/V references to improve noise performance with a power-off function added for portable applications. The prototype ADC is implemented in a 0.18 um CMOS and simultaneously integrated in a DVD system with dual-mode inputs. The measured DNL and INL are within 0.49 LSB and 0.69 LSB, respectively. The prototype ADC shows the SFDR of 53 dB for a 10 MHz input sinewave at 240 MS/s while maintaining the SNDR exceeding 38 dB and the SFDR exceeding 50 dB for input frequencies up to the Nyquist frequency at 240 MS/s. The ADC consumes, 104 mW at 240 MS/s and the active die area is 1.36 ㎟.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.53-63
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• 2009

This work proposes a 10b 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS ADC for WLAN such as an IEEE 802.11n standard. The proposed ADC employs a three-stage pipeline architecture and minimizes power consumption and chip area by sharing as many circuits as possible. Two multiplying DACs share a single amplifier without MOS switches connected in series while the shared amplifier does not show a conventional memory effect. All three flash ADCs use only one resistor ladder while the second and third flash ADCs share all pre-amps to further reduce power consumption and chip area. The interpolation circuit employed in the flash ADCs halves the required number of pre-amps and an input-output isolated dynamic latch reduces the increased kickback noise caused by the pre-amp sharing. The prototype ADC implemented in a 0.18um n-well 1P6M CMOS process shows the DNL and INL within 0.83LSB and 1.52LSB at 10b, respectively. The ADC measures an SNDR of 52.1dB and an SFDR of 67.6dB at a sampling rate of 100MS/s. The ADC with an active die area of $0.8mm^2$ consumes 27.2mW at 1.8V and 100MS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.15-22
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• 2006

In this paper, 1.8V 8-bit 500MSPS Low-power CMOS Digital-to-Analog Converter(DAC) for UWB(Ultra Wide Band) Communication Systeme is proposed. The architecture of the DAC is based on a current steering 6+2 full matrix type which has low glitch and high linearity. In order to achieve a high speed and good performance, a current cell with a high output impedance and wide swing output range is designed. Further a thermometer decoder with same delay time and low-power switching decoder for high efficiency performance are proposed. The proposed DAC was implemented with TSMC 0.18um 1-poly 6-metal N-well CMOS technology. The measured SFDR was 49dB when the output frequency was 50MHz at 500MS/s sampling frequency. The measured INL and DNL were 0.9LSB and 0.3LSB respectively. The DAC power dissipation was 20mW and the effective chip area was $0.63mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.130-134
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• 2008

This paper presents a clock and data recovery(CDR) using a quarter-rate technique. The proposed CDR helps reduce the VCO frequency and is thus advantageous for high speed application. It can achieve a low jitter operation and extend the pull-in range without a reference clock. The CDR consists of a quarter-rate bang-bang type phase detector(PD) quarter-rate frequency detector(QRFD), two charge pumps circuits(CPs), low pass filter(LPF) and a ring voltage controlled oscillator(VCO). The Proposed CDR has been fabricated in a standard $0.18{\mu}m$ 1P6M CMOS technology. It occupies an active area $1{\times}1mm^2$ and consumes 98 mW from a single 1.8 V supply.

• Proceedings of the Korea Information Processing Society Conference
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• 2005.05a
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• pp.1641-1644
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• 2005

현재의 인터넷과 같은 전자 통신망과 멀티미디어 시스템의 발달은 고속의 대용량 데이터 전송을 필요로 한다. 초고속 통신 시스템에서의 고속 데이터 전송은 주로 광섬유를 사용하는 광통신으로 이루어지고 있다. FTTH(Fiber To The Home)와 같은 광통신 시스템은 멀티미디어 커뮤니케이션을 위해 필요한 큰 데이터 전송률을 제공할 수 있기 때문에 더욱 더 중요성이 높아지고 있으며 이러한 광통신 시스템에서는 통신환경의 영향을 적게 받고 외부 조절이나 부품이 필요하지 않는 수신기 IC 의 개발이 요구되고 있다. 일반적으로 광통신 수신기에는 고속 동작에 적합한 특성을 가진 GaAs-MESFET 가 사용되고 있으나, 본 논문에서는 0.35um CMOS 2-poly 4-metal 공정을 이용하여 5Gbps 광수신기를 설계하였다. 설계된 수신기는 Preamplifier, Main amplifier, ABC 회로로 구성되어 있다. Transimpedance amplifier 형태의 Preamplifier 는 광검출기에 의해 생성된 전류 신호를 전압 신호로 변환한다. ABC 회로는 Peak_Hold 회로와 Bottom_Hold 회로로 구성되어 있다. 기존의 Peak_Hold 회로에서는 다이오드와 hold capacitor 를 이용하여 peak 값을 검출하도록 되어 있는데, 다이오드를 이용하는 경우 작은 입력 신호전압의 Peak 값을 검출하는 데 한계가 있다. 이러한 단점을 보완하고자 전류 거울형태의 Peak_Hold 회로를 설계하였다. 전류거울(current mirror)형태의 출력 신호의 duty error 를 줄이고 비트 에러율(Bit Error Rate)을 개선하는데 효과적이었다. 설계된 광수신기는 30dB 의 입력 dynamic range 와 입력 capacitance 3pF 에서 80MHz 의 대역폭을 가진다. 전력 소비량은 3.3V 전원 전압이 인가된 경우 약 150mW 정도이다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.38-44
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• 2007

This paper describes a 12 bit 80MHz CMOS D/A converter for wireless transceiver. Proposed circuit in the paper employes segmented structure which consists of four stage 3bit thermometer decoders. Proposed D/A converter is manufactured 0.35um CMOS n-well digital standard process and measurement results show a ${\pm}1.36SB/{\pm}0.62LSB$ of INL/DNL and $46pV{\cdot}s$ of glitch energy. SNR and SFDR are measured to be 58.5dB and 64.97dB @ Fs=80MHz and Fin=19MHz with a total power consumption of 99mW. Such results proved that our work has low power consumption, high linearity, low glitch and improved dynamic performance. Therefore, our work can be appled to various high speed and high performance circuits.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.1-8
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• 2005

In this paper, CMOS A/D converter with 6bit 2GSPS Nyquist input at 1.8V is designed. In order to obtain the resolution of 6bit and the character of high-speed operation, we present an Interpolation type architecture. In order to overcome the problems of high speed operation, a novel One-zero Detecting Encoder, a circuit to reduce the Reference Fluctuation, an Averaging Resistor and a Track & Hold, a novel Buffered Reference for the improved SNR are proposed. The proposed ADC is based on 0.18um 1-poly 3-metal N-well CMOS technology, and it consumes 145mW at 1.8V power supply and occupies chip area of 977um $\times$ 1040um. Experimental result show that SNDR is 36.25 dB when sampling frequency is 2GHz and INL/DNL is $\pm$0.5LSB at static performance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.11
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• pp.48-55
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• 2009

This paper presents a high-speed Forward Error Correction (FEC) architecture based on three-parallel Reed-Solomon (RS) decoder for next-generation 100-Gb/s optical communication systems. A high-speed three-parallel RS(255,239) decoder has been designed and the derived structure can also be applied to implement the 100-Gb/s RS-FEC architecture. The proposed 100-Gb/s RS-FEC has been implemented with 0.13-${\mu}m$ CMOS standard cell technology in a supply voltage of 1.2V. The implementation results show that 16-Ch. RS-FEC architecture can operate at a clock frequency of 300MHz and has a throughput of 115-Gb/s for 0.13-${\mu}m$ CMOS technology. As a result, the proposed three-parallel RS-FEC architecture has a much higher data processing rate and low hardware complexity compared with the conventional two-parallel, three-parallel and serial RS-FEC architectures.