• 대한전자공학회논문지SD
• /
• 제44권8호
• /
• pp.45-51
• /
• 2007

[ $1.6{\mu}m$ ]의 활성층을 가지는 planar형태의 94 GHz graded-gap injector GaAs 건 다이오드를 설계, 제작하였다. 이 다이오드는 반 절연 기판에 성장된 에피 구조를 바탕으로 메사 식각, 오믹 금속 접촉형성 및 overlay metalization의 주요 공정을 통하여 두가지 형태의 planar 구조로 제작되었다. 제작된 건 다이오드의 부성저항 특성을 anode와 cathode 금속전극들의 배치를 달리 한 두 소자 구조에서 고찰하였고 graded-gap injector의 역할을 순방향과 역방향에서의 직류거동으로부터 살펴보았다. 결과적으로, 금속전극의 배치에 있어서, cathode와 anode 전극사이의 거리가 감소된 소자 구조에서 증가된 peak 전류와 breakdown 전압, 그리고 감소된 문턱전압을 얻었다.

• 한국전기전자재료학회논문지
• /
• 제21권3호
• /
• pp.255-259
• /
• 2008

Built-in voltage in ITO/$Alq_3$/ Al organic light-emitting diodes was studied by varying a thickness of $Alq_3$ layer using modulated photocurrent technique at ambient condition. A thickness of the $Alq_3$ layer was varied from 100 to 250 nm. From the bias voltage-dependent photocurrent, built-in voltage of the device was able to be determined. The obtained built-in voltage is about 0.8 V irrespective of the $Alq_3$ layer thickness in the device. This value of built-in voltage confirms that the built-in voltage is generated due to a difference of work function of the anode and cathode. The $Alq_3$ layer thickness independent built-in voltage indicates that the built-in electric field in the device is uniform across the organic layer.

• ETRI Journal
• /
• 제24권4호
• /
• pp.290-298
• /
• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• 한국수소및신에너지학회논문집
• /
• 제14권3호
• /
• pp.229-235
• /
• 2003

A 50W class MCFC stack was operated in order to test a new design of the circular shaped separator. in the new design, the anode gas was supplied into the stack and was exhausted out of the stack after the anode reaction. The exhausted gas was reacted with the cathode gas supplied with excess oxygen in the vessel in which the stack was placed. Then the reacted gas flowed into the cathode side of the stack and was exhausted through the outlet located in the center of the stack. The average voltage of the single cells in the stack was 0.835V under the current density of $150mA/cm^2$, initially, and the degradation rate of the stack voltage was 1.7%/1,000h. High stack voltage with good stability of the present stack was due to the small temperature gradient in the stack. The small temperature gradient as well as the easiness of temperature control was the result of the new configuration of the separator which utilized the heat of the combustion reaction between anode outlet gas and the cathode inlet gas for heating the stack.

• 한국수소및신에너지학회논문집
• /
• 제33권6호
• /
• pp.723-732
• /
• 2022

Cracking ammonia inside solid oxide fuel cell (SOFC) stack is a compact and simple way. To prevent sharp temperature fluctuation and increase cell efficiency, the decomposition reaction should be spread on whole cell area. This leading to a question that, how does anode thickness affect the conversion rate of ammonia and the cell voltage? Since the 0D model of SOFC is useful for system level simulation, how accurate is it to use equilibrium solver for internal ammonia cracking reaction? The 1D model of ammonia fed SOFC was used to simulate the diffusion and reaction of ammonia inside the anode electrode, then the partial pressure of hydrogen and steam at triple phase boundary was used for cell voltage calculation. The result shows that, the ammonia conversion rate increases and reaches saturated value as anode thickness increase, and the saturated thickness is bigger for lower operating temperature. The similar cell voltage between 1D and 0D models can be reached with NH₃ conversion rate above 90%. The 0D model and 1D model of SOFC showed similar conversion rate at temperature over 750℃.

• 전기화학회지
• /
• 제19권4호
• /
• pp.129-133
• /
• 2016

본 연구에서는 고분자와 탄소 물질을 복합화시켜 친환경의 유기 음극을 제조하였다. Poly(styrenesulfonate)(PSS)-carbon 복합 음극은 탄소 입자를 PSS이 둘러싸고 있는 core-shell 형태를 보이며 $524mAh\;g^{-1}$의 이론용량과 0.6 V 이하의 낮은 전압을 가진다. PSS-carbon 복합 음극은 0.1, 0.5, 1, 10C에서 각각 용량 $519.6mAh\;g^{-1}$, $461.2mAh\;g^{-1}$, $411.8mAh\;g^{-1}$, $315.9mAh\;g^{-1}$의 첫 번째 방전 용량을 가지면 30사이클까지 안정적인 주기 특성을 보여준다. Polystyrene 구조와 sulfonate 기능 기를 갖는 PSS와의 탄소 복합 전극은 유기 이차전지의 전기화학적 특성을 향상 시키기 적합한 음극활 물질로 여겨 진다.

• Journal of Electrochemical Science and Technology
• /
• 제12권2호
• /
• pp.246-256
• /
• 2021

Mo,Cu-doped CeO₂ (CMCuO) nanopowders were synthesized by the nitrate-fuel combustion method aiming to improve the electrical and electrochemical properties of its Mo-doped CeO₂ (CMO) parent by the addition of copper. An electrical conductivity of ca. 1.22·10^-2 S cm^-1 was measured in air at 800℃ for CMCuO, which is nearly 10 times higher than that reported for CMO. This increase was associated with the inclusion of copper into the crystal lattice of ceria and the presence of Cu and Cu₂O as secondary phases in the CMCuO structure, which also could explain the increase in the charge transfer activities of the CMCuO based anode for the hydrogen and carbon monoxide electro-oxidation processes compared to the CMO based anode. A maximum power density of ca. 120 mW cm^-2 was measured using a CMCuO based anode in a solid oxide fuel cell (SOFC) with YSZ electrolyte and LSM-YSZ cathode operating at 800℃ with humidified syngas as fuel, which is comparable to the power output reported for other SOFCs with anodes containing copper. An increase in the area specific resistance of the SOFC was observed after ca. 10 hours of operation under cycling open circuit voltage and polarization conditions, which was attributed to the anode delamination caused by the reduction of the Cu₂O secondary phase contained in its microstructure. Therefore, the addition of a more electroactive phase for hydrogen oxidation is suggested to confer long-term stability to the CMCuO based anode.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권6호
• /
• pp.601-607
• /
• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• Journal of Korean Vacuum Science & Technology
• /
• 제3권1호
• /
• pp.38-42
• /
• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
• /
• pp.140-145
• /
• 2001

This paper proposes to use a 20[kHz] phase­shifted Full-Bridge (FB) Zero-Voltage-Switched (ZVS) PWM converter in order to drive a 600[W] magnetron, and analyzes the operational modes in a switching period. Additionally, the controller of the average anode current is designed. Simulation studies and experiments verify that the proposed converter and the average anode current controller shows good performance to drive the magnetron.