Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design and fabrication of millimeter-wave GaAs Gunn diodes

밀리미터파 GaAs 건 다이오드의 설계 및 제작

  • Kim, Mi-Ra (Millimeter-wave Innovation Technology Research Center, Dongguk University) ;
  • Lee, Seong-Dae (Millimeter-wave Innovation Technology Research Center, Dongguk University) ;
  • Chae, Yeon-Sik (Millimeter-wave Innovation Technology Research Center, Dongguk University) ;
  • Rhee, Jin-Koo (Millimeter-wave Innovation Technology Research Center, Dongguk University)
  • 김미라 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이성대 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 채연식 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Published : 2007.08.25
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Abstract

We designed and fabricated the planar graded-gap injector GaAs Gm diodes with $1.6{\mu}m$ active length for operation at 94 GHz. The fabrication of the Gunn diode is based on MESA etching, Ohmic metalization, and overlay metalization. The measured negative resistance characteristics of the graded-gap injector GaAs Gunn diodes are examined for two different device structures changing the distance between the cathode and the anode electrodes. Also, we discuss the DC results under the forward and the reverse biases concerning the role of the graded-gap injector. It is shown that the structure having the shorter distance between the cathode and the anode electrode has higher peak current, higher breakdown voltage, and lower threshold voltage than those of the larger distance.

[ $1.6{\mu}m$ ]의 활성층을 가지는 planar형태의 94 GHz graded-gap injector GaAs 건 다이오드를 설계, 제작하였다. 이 다이오드는 반 절연 기판에 성장된 에피 구조를 바탕으로 메사 식각, 오믹 금속 접촉형성 및 overlay metalization의 주요 공정을 통하여 두가지 형태의 planar 구조로 제작되었다. 제작된 건 다이오드의 부성저항 특성을 anode와 cathode 금속전극들의 배치를 달리 한 두 소자 구조에서 고찰하였고 graded-gap injector의 역할을 순방향과 역방향에서의 직류거동으로부터 살펴보았다. 결과적으로, 금속전극의 배치에 있어서, cathode와 anode 전극사이의 거리가 감소된 소자 구조에서 증가된 peak 전류와 breakdown 전압, 그리고 감소된 문턱전압을 얻었다.

Keywords

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