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Design and fabrication of millimeter-wave GaAs Gunn diodes  

Kim, Mi-Ra (Millimeter-wave Innovation Technology Research Center, Dongguk University)
Lee, Seong-Dae (Millimeter-wave Innovation Technology Research Center, Dongguk University)
Chae, Yeon-Sik (Millimeter-wave Innovation Technology Research Center, Dongguk University)
Rhee, Jin-Koo (Millimeter-wave Innovation Technology Research Center, Dongguk University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.44, no.8, 2007 , pp. 45-51 More about this Journal
Abstract
We designed and fabricated the planar graded-gap injector GaAs Gm diodes with $1.6{\mu}m$ active length for operation at 94 GHz. The fabrication of the Gunn diode is based on MESA etching, Ohmic metalization, and overlay metalization. The measured negative resistance characteristics of the graded-gap injector GaAs Gunn diodes are examined for two different device structures changing the distance between the cathode and the anode electrodes. Also, we discuss the DC results under the forward and the reverse biases concerning the role of the graded-gap injector. It is shown that the structure having the shorter distance between the cathode and the anode electrode has higher peak current, higher breakdown voltage, and lower threshold voltage than those of the larger distance.
Keywords
GaAs; Gunn diode; Graded-gap injector; Negative resistance;
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