• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.52-59
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• 2010

This paper proposes a high-resolution and high-frame rate CMOS image sensor with column-wise cyclic ADC. The proposed ADC uses the sharing techniques of OTAs and capacitors for low-power consumption and small silicon area. The proposed ADC was verified implementing the prototype chip as QVGA image sensor. The measured maximum frame rate is 120 fps, and the power consumption is 130 mW. The power supply is 3.3 V, and the die size is $4.8\;mm\;{\times}\;3.5\;mm$. The prototype chip was fabricated in a 2-poly 3-metal $0.35-{\mu}m$ CMOS process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.22-28
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• 2008

This paper designed a efficient 8-bit CMOS analog-to-digital converter(ADC) for an SOC(System On Chip) application. The architecture consists of two modified 4-bit full-flash ADCs, it has been designed using a more efficient architecture. This is to predict roughly the range in which input signal residers and can be placed in the proximity of input signal based on initial prediction. The prediction of input signal is made available by introducing a voltage estimator. For 4-bit resolution, the modified full-flash ADC need only 6 comparators. So a 8-bit ADC require only 12 comparators and 32 resistors. The speed of this ADC is almost similar to conventional full-flash ADC, but the die area consumption is much less due to reduce numbers of comparators and registors. This architecture uses even fewer comparator than half-flash ADC. The circuits which are implemented in this paper is simulated with LT SPICE tool of computer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.760-770
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• 2016

A 12-bit 750 kS/s Dual-Sampling Successive Approximation Register Analog-to-Digital Converter (SAR ADC) technique with reduced Capacitive DAC (CDAC) is presented in this paper. By adopting the Adaptive Power Control (APC) technique for the two-stage latched type comparator and using bootstrap switch, power consumption can be reduced and overall system efficiency can be optimized. Bootstrapped switches also are used to enhance the sampling linearity at a high input frequency. The proposed SAR ADC reduces the average switching energy compared with conventional SAR ADC by adopting reduced the Most Significant Bit (MSB) cycling step with Dual-Sampling of the analog signal. This technique holds the signal at both comparator input asymmetrically in sample mode. Therefore, the MSB can be calculated without consuming any switching energy. The prototype SAR ADC was implemented in $0.18-{\mu}m$ CMOS technology and occupies $0.728mm^2$. The measurement results show the proposed ADC achieves an Effective Number-of-Bits (ENOB) of 10.73 at a sampling frequency of 750 kS/s and clock frequency of 25 MHz. It consumes only 0.13 mW from a 5.0-V supply and achieves the INL and DNL of +2.78/-2.45 LSB and +0.36/-0.73 LSB respectively, SINAD of 66.35 dB, and a Figures-of-Merit (FoM) of a 102 fJ/conversion-step.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.47-55
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• 2010

In this paper, a timing register architecture using demultiplexer and counter is proposed to reduce the area of the high resolution SAR type analog to digital converter. The area and digital power consumption of the conventional timing register based on the shift register is drastically increased, as the resolution is increased. On the other hand, the proposed architecture results in reduction of the area and the power consumption of the error correction logic of the SAR ADC. This chip is implemented with 0.18 um CMOS process. The area is reduced by 5.4 times and the digital power consumption is minimized compared with the conventional one. The 12 bits SAR ADC shows ENOB of 11 bits, power consumption of 2 mW, and conversion speed of 1 MSPS. The die area is $1 mm{\times}1mm$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.405-408
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• 2015

While the oversampling sigma-delta ADCs are known to have high resolution, they often suffer from SNDR losses when operated at a very high data clock. This paper presents a design and implementation of a decimation filter that provides minimum distortion at passband for high-speed sigma-delta ADC. The proposed digital decimation filter employs a butterworth structure, which is a type of an IIR filter. To evaluate the performance of the proposed decimation filter, we implemented a 1-bit, third-order, OSR=64 sigma-delta modulator followed by the proposed decimation filter. Using the simulation ad measurement, we compared the performance of the proposed decimation filter with a conventional CIC(cascaded integrator comb) decimation filter, which is commonly used in most sigma-delta ADCs. The measurement results show that the proposed decimation filter presents substantially lower distortion at passband and thus can provide must higher SNDR.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.95-103
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• 2011

This paper proposes a 6b 1.2 GS/s 47.8 mW 0.17 $mm^2$ 65 nm CMOS ADC for high-rate wireless personal area network systems. The proposed ADC employs a source follower-free flash architecture with a wide input range of 1.0 $V_{p-p}$ at a 1.2 V supply voltage to minimize power consumption and high comparator offset effects in a nanometer CMOS technology. The track-and-hold circuits without source followers, the differential difference amplifiers with active loads in pre-amps, and the output averaging layout scheme properly handle a wide-range input signal with low distortion. The interpolation scheme halves the required number of pre-amps while three-stage cascaded latches implement a skew-free GS/s operation. The two-step bubble correction logic removes a maximum of three consecutive bubble code errors. The prototype ADC in a 65 nm CMOS demonstrates a measured DNL and INL within 0.77 LSB and 0.98 LSB, respectively. The ADC shows a maximum SNDR of 33.2 dB and a maximum SFDR of 44.7 dB at 1.2 GS/s. The ADC with an active die area of 0.17 $mm^2$ consumes 47.8 mW at 1.2 V and 1.2 GS/s.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.182-185
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• 2014

In this paper, the ADC performs research and development for high speed data transfers to minimize the optical delay. Have more $6{\mu}s$ delay in the data signal converting optical repeater transmission system existing there has been a limit on the high-speed data transmission, and signal conversion. The need to develop a new technique to reduce the delay in time within $2{\mu}s$ data signal converted by using this direct conversion system. It is desired the development of the core technologies necessary for the signal transduction component, such as mobile communications LTE, LTE advanced service transport network is established, the delay time $3{\mu}s$ technology for reducing the delay time in the signal converting a revolutionary step is applied in this paper we have developed an ADC.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.61-69
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• 2010

In this paper, an 1.2V 8b 800MSPS A/D Converter(ADC) with an odd number of folding block to overcome the asymmetrical boundary-condition error is described. The architecture of the proposed ADC is based on a cascaded folding architecture using resistive interpolation technique for low power consumption and high input frequency. The ADC employs a novel odd folding block to improve the distortion of signal linearity and to reduce the offset errors. In the digital block, furthermore, we use a ROM encoder to convert a none-$2^n$-period code into the binary code. The chip has been fabricated with an $0.13{\mu}m$ 1P6M CMOS technology. The effective chip area is $870{\mu}m\times980{\mu}m$. SNDR is 44.84dB (ENOB 7.15bit) and SFDR is 52.17dBc, when the input frequency is 10MHz at sampling frequency of 800MHz.

• The KIPS Transactions:PartA
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• v.11A no.2
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• pp.195-202
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• 2004

This paper introduces the design or parallel Pipeline high-speed analog-to-digital converter(ADC) for the high-resolution video applications which require very precise sampling. The overall architecture of the ADC consists of 4-channel parallel time-interleaved 10-bit pipeline ADC structure a]lowing 200MSample/s sampling speed which corresponds to 4-times improvement in sampling speed per channel. Key building blocks are composed of the front-end sample-and-hold amplifier(SHA), the dynamic comparator and the 2-stage full differential operational amplifier. The 1-bit DAC, comparator and gain-2 amplifier are used internally in each stage and they were integrated into single switched capacitor architecture allowing high speed operation as well as low power consumption. In this work, the gain of operational amplifier was enhanced significantly using negative resistance element. In the ADC, a delay line Is designed for each stage using D-flip flops to align the bit signals and minimize the timing error in the conversion. The converter has the power dissipation of 280㎽ at 3.3V power supply. Measured performance includes DNL and INL of +0.7/-0.6LSB, +0.9/-0.3LSB.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.69-76
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• 2008

This work proposes a 12b 1kS/s 65uA 0.35um CMOS algorithmic ADC for sensor interface applications such as accelerometers and gyro sensors requiring high resolution, ultra-low power, and small size simultaneously. The proposed ADC is based on an algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. Two versions of ADCs are fabricated with a conventional open-loop sampling scheme and a closed-loop sampling scheme to investigate the effects of offset and 1/f noise during dynamic operation. Switched bias power-reduction techniques and bias circuit sharing reduce the power consumption of amplifiers in the SHA and MDAC. The current and voltage references are implemented on chip with optional of-chip voltage references for low-power SoC applications. The prototype ADC in a 0.35um 2P4M CMOS technology demonstrates a measured DNL and INL within 0.78LSB and 2.24LSB, and shows a maximum SNDR and SFDR of 60dB and 70dB in versionl, and 63dB and 75dB in version2 at 1kS/s. The versionl and version2 ADCs with an active die area of $0.78mm^2$ and $0.81mm^2$ consume 0.163mW and 0.176mW at 1kS/s and 2.5V, respectively.