• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.4
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• pp.917-922
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• 2010

In this paper, a new temperature-insensitive CMOS dual-mode current reference for low-voltage low-power mixed-mode circuits is proposed. The temperature independent reference current is generated by summing a proportional to absolute temperature(PTAT) current and a complementary to absolute temperature(CTAT) current. The temperature insensitivity was achieved by the mobility and the other which is inversely proportional to mobility. As the results, the temperature dependency of output currents was measured to be $0.38{\mu}A/^{\circ}C$ and $0.39{\mu}A/^{\circ}C$, respectively. And also, the power dissipation is 0.84mW on 2V voltage supply. These results are verified by the $0.18{\mu}m$ n-well CMOS parameter.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.678-681
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• 2009

A single-pixel photon counter is designed using a folded cascode CMOS operational amplifier which is self-biased. Since there is no need for a voltage bias circuit, the layout area and power consumption of the designed counter are reduced. The signal voltage of the designed charge sensitive amplifier (CSA) with the MagnaChip $0.18{\mu}m$ CMOS process is simulated to be 138mv, near the theoretical voltage of 151mV. And the layout area of the designed counter is $100{\mu}m{\times}100{\mu}m$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.349-351
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• 2013

This research paper presents a low-power programmable gain amplifier (PGA) to facilitate signal processing of the detection of defects in steel plates. This circuit is able to adjust a gain in the range of 6 to 60dB in 7 steps using different signal types for various defects from hall sensors. The gain of PGA is designed by operating on-resistors of switches and passive components. The proposed PGA ($0.18{\mu}m$ CMOS process with 1.8 supply voltage) showed excellent gain error of less than -0.2dB, and low power consumption of 0.47mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.11
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• pp.924-927
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• 2017

This paper presents a 6~18 GHz 8-bit true time delay (TTD) circuit. The unit delay circuit is based on m-derived filter with relatively constant group delay. The designed 8-bit TTD is implemented with two single-pole double-throw (SPDT) switches and seven double- pole double-throw (DPDT) switches. The reflection characteristics are improved by using inductors. The designed 8-bit TTD was fabricated using $0.18{\mu}m$ CMOS. The measured delay control range was 250 ps with 1 ps of delay resolution. The measured RMS group delay error was less than 11 ps at 6~18 GHz. The measured input/output return losses are better than 10 dB. The chip consumes zero power at 1.8 V supply. The chip size is $2.36{\times}1.04mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.73-78
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• 2011

A frequency synthesizer for DAB applications is designed using $0.18{\mu}m$ CMOS process with 1.8V supply. NP-core type is chosen for VCO core to improve low power characteristic and symmetric characteristic of output waveform. VCO range is 1302.34 MHz - 1949.51 MHz using switchable capacitor bank and varactor bank. Varactor biases that improve varactor capacitance characteristics were minimized as two, $K_{vco}$(VCO gain) is maintained using technique of varactor bank switching. Intervals of $K_{vco}$ are maintained adding VCO frequency compensation logic. Each block of VCO and frequency synthesizer designed $0.18{\mu}m$ CMOS process with 1.8V supply is verified by Cadence Spectre, measured VCO consumes 9mA current, and is 39.8% tuning range, total power consumption of the frequency synthesizer is 18mW.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.414-422
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• 2013

This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) using a split-capacitor-based differential digital-to-analog converter (DAC). SAR logic and comparator are asynchronously operated to increase the sampling frequency. The time-domain comparator with an offset calibration technique is used to achieve a high resolution. The proposed 10-bit 10-MS/s asynchronous SAR ADC with the area of $140{\times}420{\mu}m^2$ is fabricated using a 0.18-${\mu}m$ CMOS process. Its power consumption is 1.19 mW at 1.8 V supply. The measured SNDR is 49.95 dB for the analog input frequency of 101 kHz. The DNL and INL are +0.57/-0.67 and +1.73/-1.58, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.5
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• pp.67-74
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• 2013

A low-power 12-bit resistor string DAC for wireless sensor applications is presented. Two-step approach reduces complexity, minimizes power consumption and area, and increases speed. This chip is fabricated in 0.18-${\mu}m$ CMOS and the die area is $0.76mm{\times}0.56mm$. The measured power consumption is 1.8mW from the supply voltage of 1.8V. Measured SFDR(Spurious-Free Dynamic Range) is 70dB when the sampling frequency is less than 1 MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.59-66
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• 2005

CMOS LC VCO for tri-bind wireless LAN applications was designed in 1.8V 0.18$\mu$m CMOS process. PMOS transistors were chosen for VCO core to reduce flicker noise. The possible operation was verified for 5.8GHz band (5.725$\~$5.825GHz), 5.2GHz band (5.150$\~$5.325GHz), and 2.4GHz band (2.412$\~$2.484GHz) using the switchable L-C resonators. To linearize its frequency-voltage gain (Kvco), optimized multiple MOS varactor biasing technique was used for capacitance linearization and PLL stability improvement. VCO core consumed 2mA current and $570{\mu}m{\times}600{\mu}m$ die area. The phase noise was lower than -110dBc/Hz at 1MHz offset for tri-band frequencies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.21-27
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• 2008

This paper describes a CMOS 16:1 binary-tree multiplexer(MUX) using $0.18-{\mu}m$ technology. To provide immunity for wide frequency range and process-and-temperature variations, the MUX adopts several delay compensation techniques. Simulation results show that the proposed MUX maintains the setup margins and hold margins close to the optimal value, i.e., 0.5UI, in wide frequency-range and in wide process-and-temperature variations, with standard deviation of 0.05UI approximately. These results represent that these proposed delay compensations are effective and the reliability is much improved although CMOS logic circuits are sensitive to those variations. The MUX is fabricated using $0.18-{\mu}m$ CMOS process, and tested with a test board. At power supply voltage of 1.8-V, maximum data-rate and area of the MUX is 1.65-Gb/s and 0.858 $mm^2$, respectively. The MUX dissipates a power of 24.12 mW, and output eye opening is 272.53 mV, 266.55 ps at 1.65-Gb/s operation.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.65-72
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• 2013

This paper presents design methodology for Memristor-CMOS circuits and its application to primitive IPs design. We proposed a Memristor model and designed basic elements, Memristor AND/OR gates. The primitive IPs based on a Memristor-CMOS technology is proposed for a Memristive system design. The netlists of IPs are extracted from the layouts of Memristor-CMOS and is verified with SPICE-like Memristor model under $0.18{\mu}m$ CMOS technology. As a result, an example design Memristor-CMOS full adder has only 47.6 % of silicon area compare to the CMOS full-adder.