• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.632-634
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• 2004

First for high-qualify images and reducing process-error and driving speed, the designed 8-bit data driving circuit consists of a constant transconductance bias circuit, D-F/Fs by shift registers using static transmission gates, 1st latch and 2nd latch by tristate inverters, level shifters, current steering segmented D/A converters by 4MSB thermometer decoder and 4LSB weighted type. Second, we designed gray amp for power saving. These data driving circuits are designed with $0.35-{\mu}m$ CMOS technologies at 3.3 V and 18 V power supplies and simulated with HSPICE.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.34S no.12
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• pp.10-18
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• 1997

The parallel trabutary signals in the SDH-based transmission system have the frame phase skew due to uneven transmission delays in the data and the clock path. This phase skew must be eliminated prior to synchronously multiplexing process. A new twenty-four channel, 51.84Mb/s DFPA(Digital Frame Phase Aligner) has been designed and fabricated in 0.8.mu.m CMOS gate array. This unique device phase-aligns the skewed input signals with refernce frame synchronous signal and reference clok for subsequent synchronous multiplexing process. the performance of fabricated device is evaluated by the STM-16 transmission system and DS-3 meansurement set. The frame phase margin of +2/-3 bit periods has been demonstrated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.353-359
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• 2012

A highly efficient charge pump that minimizes the reverse charge sharing current (in short, reverse current) is proposed. The charge pump employs auxiliary capacitors and diode-connected MOSFET along with an early clock to drive the charge transfer switches; this new method provides better isolation between stages. As a result, the amount of reverse current is reduced greatly and the clock driver can be designed with reduced transition slope. As a proof of the concept, a 1.1V-to-9.8 V charge pump was designed in a $0.35{\mu}m$ 18 V CMOS technology. The proposed architecture shows 1.6 V ~ 3.5 V higher output voltage compared with the previously reported architecture.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.163-165
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• 2018

GF(p)상 타원곡선 암호(ECC)와 RSA를 단일 하드웨어로 통합하여 구현한 공개키 암호 프로세서를 설계하였다. 설계된 EC-RSA 공개키 암호 프로세서는 NIST 표준에 정의된 소수체 상의 224-비트 타원 곡선 P-224와 2048-비트 키 길이의 RSA를 지원한다. ECC와 RSA가 갖는 연산의 공통점을 기반으로 워드기반 몽고메리 곱셈기와 메모리 블록을 효율적으로 결합하여 최적화된 데이터 패스 구조를 적용하였다. EC-RSA 공개키 암호 프로세서는 Modelsim을 이용한 기능검증을 통하여 정상동작을 확인하였으며, $0.18{\mu}m$ CMOS 셀 라이브러리로 합성한 결과 11,779 GEs와 14-Kbit RAM의 경량 하드웨어로 구현되었다. EC-RSA 공개키 암호 프로세서는 최대 동작주파수 133 MHz이며, ECC 연산에는 867,746 클록주기가 소요되며, RSA 복호화 연산에는 26,149,013 클록주기가 소요된다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.24-33
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• 2012

This paper describes a multi-mode LDPC decoder which supports 19 block lengths and 6 code rates of Quasi-Cyclic LDPC code for Mobile WiMAX system. To achieve an efficient implementation of 114 operation modes, some design optimizations are considered including block-serial layered decoding scheme, a memory reduction technique based on the min-sum decoding algorithm and a novel method for generating the cyclic shift values of parity check matrix. From fixed-point simulations, decoding performance and optimal hardware parameters are analyzed. The designed LDPC decoder is verified by FPGA implementation, and synthesized with a $0.18-{\mu}m$ CMOS cell library. It has 380,000 gates and 52,992 bits RAM, and the estimated throughput is about 164 ~ 222 Mbps at 56 MHz@1.8 V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.339-344
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• 2014

This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.439-440
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• 2008

A high-speed DCO is proposed that uses the negative-skewed delay scheme. The DCO consists of a ring of inverters with each PMOS transistor driven from the output of 3 earlier stage through a set of minimum-sized pass-transistors. The digitization of negative-skewed delay is achieved by selecting pass-transistors turned on and digitizing the gate voltages of the selected pass-transistors. The proposed 7-stage DCO has been simulated using 1.8V, $0.18\;{\mu}m$ TSMC CMOS process to obtain a resolution of 3ps and an operation range of 2.88-5.03GHz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.583-584
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• 2008

This paper presents a low-power and high-speed pulsed flip-flop based on dual-precharging and conditional discharging. The dual-precharging operation minimizes the parasitic capacitance of each precharge node, resulting in high-speed operation. The conditional-discharging operation minimizes the redundant transitions of precharge nodes, resulting in low-power operation. Linear feedback shift register (LFSR) designed in a $0.18{\mu}m$ CMOS technology using the proposed flip-flop achieves 32% power reduction as compared to conventional design.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.589-590
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• 2008

This paper describes an improved design of graphic memory for QVGA ($320{\times}240\;RGB$) - scale 262k-color LCD Driver IC. A distributor block is adopted to reduce graphic RAM area, which is accomplished with 1/8 data lines of the previous structure. In line-read operation, the drivabilty of memory array cell is improved by partitioning a word line according to the row address. The proposed graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and verified using Hsim.

• Proceedings of the IEEK Conference
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• 2003.11a
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• pp.83-86
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• 2003

In this paper, we propose a new hardware architecture for integer transform, quantizer operation of a new video coding standard H.264/JVT. We describe the algorithm to derive hardware architecture emphasizing the importance of area for low cost and low power consumption. The proposed architecture has been verified by PCI-interfaced emulation board using APEX-II Altera FPGA and also by ASIC synthesis using Samsung 0.18 ${\mu}{\textrm}{m}$ CMOS cell library. The ASIC synthesis result shows that the proposed hardware can operate at 100 MHz, processing more than 1, 300 QCIF video frames per second. The hardware is going to be used as a core module when implementing a complete H.264 video encoder/decoder ASIC for real-time multimedia application.