• Journal of IKEEE
• /
• v.22 no.2
• /
• pp.488-490
• /
• 2018

In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characterisitcs, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. To demonstrate the changing characteristics of hysteresis, one of the important features of the feedback field effect transistor, we simulated changing the gate insulating material and the gate metal electrode. The fluctuation in the characteristics changed the $V_{TH}$ of the hysteresis and showed a decrease in width of the hysteresis.

• Journal of IKEEE
• /
• v.22 no.2
• /
• pp.499-505
• /
• 2018

Since feedback field-effect transistors (FBFETs) have ideal switching characteristics resulting from feedback phenomenon caused by electrons and holes in the channel region, the researches about FBFET devices have been proposed and demonstrated worldwide recently. The device operated with novel principle can operate as a switching electronic device. Besides, because the hysteresis characteristics of the device by accumulated electrons and holes in channel region can be also utilized for memory applications, its application range is wide. In this paper, we cover various device structures of FBFET proposed until now and their operation mechanism, and then look into their applicable fields.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2022.10a
• /
• pp.115-117
• /
• 2022

The electrical characteristics of the monolithic 3-dimensional static random access memory consisting of a feedback field-effect transistor (M3D-SRAM-FBFET) was investigated using technology computer-aided design (TCAD). The N-type FBFET and N-type MOSFET are designed with fully depleted silicon on insulator (FDSOI), and those are located at bottom and top tiers, respectively. For the M3D-SRAM-FBFET, as the supply voltage decreased from 1.9 V to 1.6 V, the reading on-current decreased approximately 10 times.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2021.10a
• /
• pp.634-636
• /
• 2021

In this study, we studied the macro-modeling of an feedback field-effect transistor (FBFET) using SPICE simulation. The previously presented macro-model of the FBFET is consisting of two circuits. one is charge integration circuit, and the other is current generation circuit. The previous current generation circuit has problem that can't predict performance accurately of the circuits, due to implementing only I_DS-V_GS characteristics. To solve this problem, we presents a model that can implement not only I_DS-V_GS characteristics but alos I_DS-V_DS characteristics by adding the diode in the current generation circuit.

• Journal of IKEEE
• /
• v.27 no.4
• /
• pp.386-390
• /
• 2023

In this study, we examined the quasi-nonvolatile memory characteristics of silicon nanosheet (SiNS) feedback field-effect transistors (FBFETs) fabricated using a complementary metal-oxide-semiconductor process. The SiNS channel layers fabricated by photoresist overexposure method had a width of approximately 180 nm and a height of 70 nm. The SiNS FBFETs operated in a positive feedback loop mechanism and exhibited an extremely low subthreshold swing of 1.1 mV/dec and a high ON/OFF current ratio of 2.4×10⁷. Moreover, SiNS FBFETs represented long retention time of 50 seconds, indicating the quasi-nonvolatile memory characteristics.

• Journal of IKEEE
• /
• v.27 no.4
• /
• pp.418-424
• /
• 2023

In this study, we examined the effects of annealing on electrical characteristics of double-gated silicon nanosheet (SiNS) feedback field effect transistors (FBFETs). When bias stresses were applied for 1000 s, the double-gated SiNS FBFETs were more affected by positive bias stresses than negative bias stresses regardless of the channel mode owing to the increase of interface traps caused by electrons in the inversion layers. After annealing at 300 ℃ for 10 mins, the devices were completely recovered to their original properties, and the characteristics did not change anymore when bias stresses were applied again for 1000 s.

• Journal of IKEEE
• /
• v.21 no.3
• /
• pp.284-287
• /
• 2017

In this study, we examined the simulated electrical characteristics of single-gated feedback field effect transistors (FBFETs) and the influence of channel length variation of the memory window characteristics through the 3D device simulation. The simulations were carried out for various channel lengths from 50 nm to 100 nm. The FBFETs exhibited zero SS(< 1 mV/dec) and a current $I_{on}/I_{off}$ ratio${\sim}1.27{\times}10^{10}$. In addition, the memory windows were 0.31 V for 50 nm-channel-length devices while no memory windows were observed for 100 nm-channel-length devices.