Acknowledgement
This research was supported by the Basic Science Research Program through NRF of Korea funded by the Ministry of Education (NRF-2019R1A2C1085295)
Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2022.10a
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- Pages.115-117
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- 2022
Investigation of the electrical characteristics of monolithic 3-dimensional static random access memory consisting of feedback field-effect transistor
피드백 전계 효과 트랜지스터로 구성된 모놀리식 3차원 정적 랜덤 액세스 메모리 특성 조사
- Oh, Jong Hyeok (Hankyong National University) ;
- Yu, Yun Seop (Hankyong National University)
- Published : 2022.10.03
Abstract
The electrical characteristics of the monolithic 3-dimensional static random access memory consisting of a feedback field-effect transistor (M3D-SRAM-FBFET) was investigated using technology computer-aided design (TCAD). The N-type FBFET and N-type MOSFET are designed with fully depleted silicon on insulator (FDSOI), and those are located at bottom and top tiers, respectively. For the M3D-SRAM-FBFET, as the supply voltage decreased from 1.9 V to 1.6 V, the reading on-current decreased approximately 10 times.
피드백 전계 효과 트랜지스터(feedback field-effect transistor; FBFET)로 구성된 모놀리식 3차원 정적 랜덤 액세스 메모리(monolithic 3-dimensional static random access memory; M3D-SRAM)에 대해 TCAD(technology computer-aided design) 프로그램을 사용하여 전기적 특성을 조사하였다. FBFET로 구성된 M3D-SRAM(M3D-SRAM-FBFET)는 FDSOI(fully depleted silicon on insulator) 구조의 N형 FBFET와 N형 MOSFET(metal oxide semiconductor field effect transistor)로 이루어져 있으며 각각 하부와 상부에 위치한다. M3D-SRAM-FBFET의 메모리 동작 시, 공급 전압이 1.9 V에서 감소함에 따라 읽기 전류가 낮아졌으며, 공급 전압이 1.6 V 일 때 읽기 전류가 약 10배 감소하였다.