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http://dx.doi.org/10.7471/ikeee.2018.22.2.499

A review of feedback field-effect transistors: operation mechanism and their applications  

Kim, Minsuk (Dept. of Electrical Engineering, Korea University)
Lee, Kyungsoo (Dept. of Electrical Engineering, Korea University)
Kim, Sangsig (Dept. of Electrical Engineering, Korea University)
Publication Information
Journal of IKEEE / v.22, no.2, 2018 , pp. 499-505 More about this Journal
Abstract
Since feedback field-effect transistors (FBFETs) have ideal switching characteristics resulting from feedback phenomenon caused by electrons and holes in the channel region, the researches about FBFET devices have been proposed and demonstrated worldwide recently. The device operated with novel principle can operate as a switching electronic device. Besides, because the hysteresis characteristics of the device by accumulated electrons and holes in channel region can be also utilized for memory applications, its application range is wide. In this paper, we cover various device structures of FBFET proposed until now and their operation mechanism, and then look into their applicable fields.
Keywords
Feedback field-effect transistors; feedback mechanism; subthreshold swing; memory application;
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