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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Effects of Annealing on Electrical Characteristics of Double-Gated Silicon Nanosheet Feedback Field-Effect Transistors

더블게이트 실리콘 나노시트 피드백 전계효과 트랜지스터의 전기적 특성에 미치는 열처리 효과

  • Hyojoo Heo (Dept. of Electrical Engineering, Korea University) ;
  • Yunwoo Shin (Dept. of Electrical Engineering, Korea University) ;
  • Jaemin Son (Dept. of Electrical Engineering, Korea University) ;
  • Seungho Ryu (Dept. of Semiconductor System Engineering, Korea University) ;
  • Kyoungah Cho (Dept. of Electrical Engineering, Korea University) ;
  • Sangsig Kim (Dept. of Electrical Engineering, Korea University)
  • Received : 2023.10.17
  • Accepted : 2023.11.16
  • Published : 2023.12.31
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Abstract

In this study, we examined the effects of annealing on electrical characteristics of double-gated silicon nanosheet (SiNS) feedback field effect transistors (FBFETs). When bias stresses were applied for 1000 s, the double-gated SiNS FBFETs were more affected by positive bias stresses than negative bias stresses regardless of the channel mode owing to the increase of interface traps caused by electrons in the inversion layers. After annealing at 300 ℃ for 10 mins, the devices were completely recovered to their original properties, and the characteristics did not change anymore when bias stresses were applied again for 1000 s.

본 연구에서는 더블게이트 실리콘 나노시트 (SiNS) 피드백 전계효과 트랜지스터(FBFET)의 전기적 특성에 열처리가 미치는 영향을 분석하였다. 1000 초 동안 바이어스 스트레스를 인가했을 때 더블게이트 SiNS FBFET는 inversion layer의 전자에 의한 계면 트랩의 증가로 인해 채널 모드와 무관하게 negative bias stress 보다는 positive bias stress의 영향을 더 많이 받았다. 300 ℃에서 10 분 동안 열처리를 진행한 이후 소자는 원래의 특성을 완전히 회복하였으며 다시 1000 초 동안 바이어스 스트레스를 인가해도 특성이 변하지 않았다.

Keywords

Acknowledgement

This study was partly supported by the Brain Korea 21 Plus Project, a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (2020R1A2C3004538, 2022M3I7A3046571), Samsung Electronics (IO201223-08257-01), and a Korea University Grant.

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