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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Quasi-nonvolatile Memory Characteristics of Silicon Nanosheet Feedback Field-effect Transistors

실리콘 나노시트 피드백 전계효과 트랜지스터의 준비휘발성 메모리 특성 연구

  • Seungho Ryu (Dept. of Semiconductor System Engineering, Korea University) ;
  • Hyojoo Heo (Dept. of Electrical Engineering, Korea University) ;
  • Kyoungah Cho (Dept. of Electrical Engineering, Korea University) ;
  • Sangsig Kim (Dept. of Semiconductor System Engineering, Korea University)
  • Received : 2023.09.25
  • Accepted : 2023.10.24
  • Published : 2023.12.31
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Abstract

In this study, we examined the quasi-nonvolatile memory characteristics of silicon nanosheet (SiNS) feedback field-effect transistors (FBFETs) fabricated using a complementary metal-oxide-semiconductor process. The SiNS channel layers fabricated by photoresist overexposure method had a width of approximately 180 nm and a height of 70 nm. The SiNS FBFETs operated in a positive feedback loop mechanism and exhibited an extremely low subthreshold swing of 1.1 mV/dec and a high ON/OFF current ratio of 2.4×107. Moreover, SiNS FBFETs represented long retention time of 50 seconds, indicating the quasi-nonvolatile memory characteristics.

본 연구에서는 기존 상보성 금속 산화막 반도체 공정을 활용하여 제작된 실리콘 나노시트(SiNS) 피드백 전계효과 트랜지스터(FBFET)의 준비휘발성 메모리 특성을 분석하였다. 과노광공정을 이용하여 형성된 SiNS 채널층의 폭은 180 nm이고 높이는 70 nm이었다. 양성 피드백 루프를 기반으로 동작하는 SiNS FBFET의 낮은 문턱전압이하 기울기는 1.1 mV/dec, ON/OFF 전류비는 2.4×107이었다. 또한 SiNS FBFET는 50 초 동안 상태를 유지하는 메모리 특성을 보여 준휘발성메모리 소자로 활용 가능성을 제시하였다.

Keywords

Acknowledgement

This study was partly supported by the Brain Korea 21 Plus Project, a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (2020R1A2C3004538), and a Korea University Grant.

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