Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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A review of feedback field-effect transistors: operation mechanism and their applications

피드백 전계효과 트랜지스터에 대한 리뷰: 동작 메커니즘과 적용 분야

  • Kim, Minsuk (Dept. of Electrical Engineering, Korea University) ;
  • Lee, Kyungsoo (Dept. of Electrical Engineering, Korea University) ;
  • Kim, Sangsig (Dept. of Electrical Engineering, Korea University)
  • Received : 2018.03.08
  • Accepted : 2018.05.29
  • Published : 2018.06.30
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Abstract

Since feedback field-effect transistors (FBFETs) have ideal switching characteristics resulting from feedback phenomenon caused by electrons and holes in the channel region, the researches about FBFET devices have been proposed and demonstrated worldwide recently. The device operated with novel principle can operate as a switching electronic device. Besides, because the hysteresis characteristics of the device by accumulated electrons and holes in channel region can be also utilized for memory applications, its application range is wide. In this paper, we cover various device structures of FBFET proposed until now and their operation mechanism, and then look into their applicable fields.

피드백 전계효과 트랜지스터는 채널 내부의 전자와 정공의 의해 발생하는 피드백 현상으로 이상적인 스위칭 특성을 갖기 때문에 최근 세계적으로 많은 연구가 진행되고 있다. 이 새로운 동작원리를 가지는 소자는 초저전력 스위칭 전자소자로 동작이 가능할 뿐만 아니라 채널 내부에 축적된 전자와 정공에 의한 히스테리시스 특성으로 메모리 소자로도 동작 가능하여 그 활용 범위가 넓다. 본 논문에서는 지금까지 제안된 다양한 구조의 피드백 전계효과 트랜지스터와 그 동작 메커니즘에 관해 확인하고 적용 가능 분야에 대해서 살펴본다.

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References

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