• 전기의세계
• /
• v.12
• /
• pp.30-34
• /
• 1963

비선형자기철심을 사용한 inductance를 그 비선형영역까지 동작하게 할때와 직렬형가포화 reactor에 R-C부하를 직렬로 연결하여 동작시킬 때 어떠한 동작범위에서는 회로의 전류진폭이 불안정한 경우가 있다. 특히 직렬형가포화 reactor에 R-C부하를 연결한 경우는 J.T.Salihi씨 및 H.C.Bourne씨에 의하여 그 동작현상이 설명되었다. 그러나 안정조건은 충분한것이 아니라고 생각되며 이와같은 R-L-C 직렬회로는 정량적으로 해석하는데 수학적인 난점이 있어서 곤란하지만 정성적인 방법 즉 근사계산에 의하여 안정성문제와 그 회로동작상태 등을 고찰할 수 있다. 본 고는 이러한 안정조건을 계산하여 제시코져 한다.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.11 no.1
• /
• pp.65-71
• /
• 1997

주 스위치가 항상 영전압에서 스위칭을 하는 새로운 영전압 스위칭 방식 (ZVS)의 PWM 컨버터를 제안하였다. 제안된 컨버터에서 두 개의 가포화(saturable)인덕터를 보조 스위치의 전도 손실을 줄이기 위하여 기존의 ZVS PWM 컨버터에서 사용한 한 개의 인덕테를 대체하였다. 컨버터의 주 스위치는 영전압 스위칭으로 인하여 스위칭의 전류를 줄이므로써 최소화하였다. 따라서, 제안된 컨버터는 고 전력밀도의 시스템 구현에 사용이 가능하다. 영전압 스위칭을 포함한 위의 특징을 실험을 통하여 증명되었다.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.681-682
• /
• 2008

최근 다양한 부하들로 인해, 배전용변압기로 사용되고 있는 몰드변압기의 운전조건이 가혹해 지고 있다. 특히, 전력변환장치와 연계된 몰드변압기의 경우, 부하의 운전특성에 따라 편자(偏磁)현상이 발생하며 이로 인해 직류성분의 전류가 몰드변압기로 유입된다. 이는 철심의 포화현상 및 변압기의 손실 증가를 유발하여 국부과열 문제로 인한 사고로 이어질 우려가 있다. 본 연구에서는 이러한 문제를 해결하기 위해, EMTP 과도해석 프로그램을 활용하여 직류성분 전류에 의해 증가되는 몰드변압기의 여자전류를 계산하고, 이를 토대로 철심의 자속밀도 변화를 계산하였다. 직류성분 전류의 크기에 따라 철심의 적정 운전자속밀도를 고려하여 몰드변압기를 설계함으로써 직류전류 유입시에도 안정적인 운전이 가능할 것으로 사료된다.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2031-2033
• /
• 2005

poly-Si TFT의 kink 전류를 억제하는 L-shaped dual-gate TFT 구조를 제안하고 이를 제작하였다. 제안된 소자는 채널의 그레인 방향을 일정하게 성장시키는 SLS나 CW laser 결정화 방법을 사용한다. L자 모양의 게이트 구조를 사용하여 서고 다른 전계효과 이동도를 갖는 두 개의 sub-TFT를 구현할 수 있으며, 이러한 sub-TFT간의 특성차이가 kink 전류를 억제시킨다. 직접 제작한 L-shaped dual-gate 구조의 소자가 poly-Si TFT의 kink 전류를 억제하고, 전류포화 영역에서 전류량을 고정시킴으로써 신뢰성이 향상됨을 확인하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.9
• /
• pp.19-24
• /
• 2004

In this paper, we have demonstrated the fabrication of a 70 nm foot print of the T-gate by using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure method without a thin dielectric supporting layer on the substrate. The device performance was characterized by DC and RF measurement. The fabricated 70 nm InGaAs/InAlAs MHEMTS with 70 ${\mu}{\textrm}{m}$ unit gate width and 2 fingers showed good DC and RF characteristics of Idss, max =228.6 mA/mm, gm =645 mS/mm, and fT =255 GHz, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.7
• /
• pp.464-472
• /
• 2001

Asymmetric n-MOSFET＇s for improving packing density have been fabricated with 0.35 ${\mu}{\textrm}{m}$ CMOS process. Electrical characteristics of asymmetric n-MOSFET show a lower saturation drain current and a higher linear resistance compared to those of symmetric devices. Substrate current of asymmetric MOSFET is lower than that of symmetric devices. Asymmetric n-MOSFET＇s have been modeled using a parasitic resistance associated with abnormally structured drain or source and a conventional n-MOSFET model. MEDICI simulation has been done for accuracy of this modeling. Simulated values of reverse as we11 as forward saturation drain current show good agreement with measured values for asymmetric device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 1998.05a
• /
• pp.405-408
• /
• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 5$0^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. Measurement electrical parameters are forward turn-on voltage, reverse breakdown voltage, barrier height, saturation current, ideality factor, dynamic resistance acceding to junction concentration of substrates and temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation current and ideality factor were increased by substrates concentration variations. Reverse breakdown voltage and dynamic resistance were increased by temperature variations.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.8 no.1
• /
• pp.30-39
• /
• 2003

In SRM driving, the current rate is directly related to the rate of switching device and in cost reduction, the Parallel switching operation is the alternatives because it has the smaller current rate through current division. There ire many investigations for the parallel switching operations to equaling the current division. However it remains many problems for practical usage. The reason Is that the switching characteristics are mainly relied on the different saturation voltage of each device etc. and these factors are not altered by a circuit designer. In order to compensate this problem, a proper resistance is experimently inserted to the switching device. But this method can not be the optimal solution. Therefore this paper propose a new parallel operation of SRM which uses a parallel phase winding to remove the traditional effect of switching device such as saturation voltage according to the division of current. Also the reliable and stable driving is improved through experiments and the detailed principles.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.3
• /
• pp.570-576
• /
• 2007

In this study, the characteristics of metal-ferroelectric-semiconductor FET (MFSFET) device is investigated using field-dependent polarization and square-law FET models. From drain current with the gate voltage variation, when coercive voltages of ferroelectric thin film are 0.5 and 1V, the memory windows are 1 and 2V, respectively. When the gate voltages are 0, 0.1, 0.2 and 0.3V, the difference of saturation drain currents of the MFSFET device at two threshold voltages in ID-VD curve are 1.5, 2.7, 4.0, and 5.7mA, respectively. As a result of the analysis for drain currents after tine lapse, which is based on the simulation for hysteresis loop and the fitting of retention properties of ferroelectric thin films such as PLZT(10/30/70), PLT(10) and PZT(30/70) thin film shows excellent reliability that the decrease of saturation current is about 18% after 10 years.

• Korean Journal of Optics and Photonics
• /
• v.11 no.3
• /
• pp.187-192
• /
• 2000

We analyze the parametric amplification by the nonlinear characteristics in a semiconductor laser using a perturbation theory and discuss its result. The parametric gain increases with increase of the pump modulation current. It is due to shift of the resonance frequency as the pump modulation current increases. However, it decreases with increase of the bias current and damping constant. Also, it needs phase matching between the pump modulation current and signal modulation current to maximize the parametric gain. The gain decreases for a large signal modulation current due to the saturation of the amplified power. power.