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http://dx.doi.org/10.6109/jkiice.2007.11.3.570

Electrical and Retention Properties of MFSFET Device  

Chung, Yeun-Gun (전남대학교 정보소재공학과)
Kang, Seong-Jun (전남대학교 정보소재공학과)
Joung, Yang-Hee (전남대학교 전기 및 반도체 공학과)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.11, no.3, 2007 , pp. 570-576 More about this Journal
Abstract
In this study, the characteristics of metal-ferroelectric-semiconductor FET (MFSFET) device is investigated using field-dependent polarization and square-law FET models. From drain current with the gate voltage variation, when coercive voltages of ferroelectric thin film are 0.5 and 1V, the memory windows are 1 and 2V, respectively. When the gate voltages are 0, 0.1, 0.2 and 0.3V, the difference of saturation drain currents of the MFSFET device at two threshold voltages in ID-VD curve are 1.5, 2.7, 4.0, and 5.7mA, respectively. As a result of the analysis for drain currents after tine lapse, which is based on the simulation for hysteresis loop and the fitting of retention properties of ferroelectric thin films such as PLZT(10/30/70), PLT(10) and PZT(30/70) thin film shows excellent reliability that the decrease of saturation current is about 18% after 10 years.
Keywords
MFSFET; Ferroelectric thin film; Memory window; Drain current; Retention;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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