Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication and Characterization of 70 nm T-gate AlGaAs/InGaAs/GaAs metamorphic HEMT Device

70 nm T-게이트를 갖는 InGaAs/InAlAs/GaAs metamorphic HEMT 소자의 제작 및 특성

  • 김성찬 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 임병옥 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 백태종 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 고백석 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 신동훈 (동국대학교 밀리미터파 신기술 연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술 연구센터)
  • Published : 2004.09.01
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Abstract

In this paper, we have demonstrated the fabrication of a 70 nm foot print of the T-gate by using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure method without a thin dielectric supporting layer on the substrate. The device performance was characterized by DC and RF measurement. The fabricated 70 nm InGaAs/InAlAs MHEMTS with 70 ${\mu}{\textrm}{m}$ unit gate width and 2 fingers showed good DC and RF characteristics of Idss, max =228.6 mA/mm, gm =645 mS/mm, and fT =255 GHz, respectively.

우리는 3층 구조의 레지스터와 이중 노광 방법을 이용하여 유전체 지지대를 사용하지 않은 새로운 방법으로 게이트 길이가 70 nm인 T-게이트를 갖는 InGaAs/InAlAs/GaAs metamorphic HEMT 제작 하였다. 게이트 길이가 70 nm이고 게이트 단위폭이 70 ㎛인 2개의 게이트를 가지고 있는 MHEMT는 최대 포화 전류밀도가 최대 포화 전류밀도가 228.6 mA/mm, 상호전달 컨덕턴스는 645 mS/mm, 전류이득차단주파수가 255 GHz인 특성을 보였다.

Keywords

References

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