• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.167-169
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• 2016

The structure guide lines of pocket tunnel field effect transistor(TFET) considering Line and Point tunneling are introduced. As the pocket doping concentration or thickness increase, on-current $I_{on}$ increases. As the pocket thickness or gate insulator increase, subthreshold swing(SS) increases. Optimal structure reducing the hump effects should be proposed in order to enhance SS.

• Journal of IKEEE
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• v.23 no.3
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• pp.988-993
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• 2019

Over the past decades, the semiconductor industry has continuously scaled down the size of semiconductor devices to increase those performance and to integrate them at higher density on the chip. However, facing the reduction of gate control, higher leakage current, and short channel effect, there is a growing interest in next-generation semiconductors which can overcome these problems. In this paper, we discuss digital circuit design techniques using CNTFET(Carbon NanuTube Field Effect Transistor), which are attracting attention as candidates for the next generation of semiconductors. Since the structure of CNTFETs are clearly different from the structure of the structure of conventional MOSFETs, we will discuss how to utilize existing digital circuit methodology when designing digital circuits using the CNTFETs, and then simulate the performance differences between the two devices.

• Journal of IKEEE
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• v.25 no.1
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• pp.101-108
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• 2021

This paper proposes a parallel control method of a modular DC/DC converter for electric vehicle (EV) chargers. The EV chargers have been increasing the power capacity using modular converters. There are output current imbalances between the modules, which are caused by the difference of the impedance, delay of the gate driver, and error of the sensors. The conventional strategies for the equal distribution of the output current cause the voltage drop or the high volume and cost of the converters. Therefore, the proposed parallel control strategy effectively balances the output current of modules using a current compensation method. The proposed strategy is verified by simulations. Additional experimental results will be added under various conditions.

• Journal of IKEEE
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• v.26 no.3
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• pp.462-467
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• 2022

The feedback buffer structure is proposed to alleviate the overshoot and undershoot phenomenon and the regulation of the output voltage. The conventional LDO regulator undergoes a regulation voltage change caused by a constant load current change. An LDO regulator with a feedback voltage sensing structure operates in the input voltage range of 3.3 to 4.5 V and has a load current of up to 150 mA at output voltage of 3 V. According to the simulation results, a regulation value of 6.2 mV was ensured when the load current uniformly changed to 150 mA.

• Proceedings of the Korea Information Processing Society Conference
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• 2011.11a
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• pp.62-65
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• 2011

FPGA는 대용량의 게이트를 지원하는 하드웨어를 프로그램 할 수 있는 디바이스이다. ASIC을 위해 설계된 로직은 칩으로 제조되기 전에 검증 과정을 거친다. 이 검증 과정에서 시뮬레이션의 한계를 극복하기 위해 FPGA를 사용한 에뮬레이션 방법을 많이 채택한다. 에뮬레이션 과정에서 ASIC의 동작 속도로 검증하는 것이 바람직하지만 FPGA의 특성상 ASIC과 같은 속도로 동작하기는 쉽지 않은 것이 현실이다. 본 논문에서는 HDL 코딩 방법에 따른 FPGA의 성능 민감도를 실험하였다. 실험 및 평가를 위해 다양한 알고리즘을 가진 가산기를 이용하였고 각 가산기 종류와 비트수에 따라 Verilog-HDL을 이용하여 코딩하였으며 대표적인 FPGA 제조사(Altera와 Xilinx)별, 디바이스별로 동작 속도와 자원 사용량을 측정하였다. 실험 결과 FPGA 제조사별로 다른 경향을 보임을 확인하였다. 성능 면에서는 비트별로 다소 차이는 있지만 Altera 디바이스에서는 Ripple Carry, Carry Lookahead 가산기보다 Prefix 가산기의 성능이 우수하게 나왔다. Xilinx 디바이스에서는 예상과 달리 가산기들 사이의 성능 차이가 크게 나지 않았으며 Ripple Carry, Carry Lookahead 가산기가 Prefix 가산기보다 높은 성능을 보이는 경우도 있었다. 비용 면에서는 디바이스별로 큰 차이가 나지 않았으며 ASIC과 비슷한 성능 민감도를 보였다. 그리고 각 제조사에서 제공하는 IP(Intellectual Property) Core를 사용했을 경우는 대부분의 디바이스에서 우수한 성능을 보여 주었다. TSMC 90nm 공정 기술로 제작한 ASIC과 IP Core를 비교했을 때는 ASIC의 성능이 4배 정도 우수한 것으로 나타났다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.114-121
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• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.107-116
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• 2009

Quantum-dot Cellular Automata (QCA) is one of the most promising next generation nanoelectronic devices which will inherit the throne of CMOS which is the domineering implementation technology for large scale low power digital systems. In late 1990s, the basic operations of the QCA cell were already demonstrated on a hardware implementation. Also, design tools and simulators were developed. Nevertheless, its design technology is not quite ready for ultra large scale designs. This paper proposes a new approach which enables the QCA designs to inherit the verification methodologies and tools of CMOS designs, as well. First, a set of disciplinary rules strictly restrict the cell arrangement not to deviate from the predefined structures but to guarantee the deterministic digital behaviors is proposed. After the gate and interconnect structures of. the QCA design are identified, the signal integrity requirements including the input path balancing of majority gates, and the prevention of the noise amplification are checked. And then the digital logic is extracted and stored in the OpenAccess common engineering database which provides a connection to a large pool of CMOS design verification tools. Towards validating the proposed approach, we designed a 2-bit adder, a bit-serial adder, and an ALU bit-slice. For each design, the digital logic is extracted, translated into the Verilog net list, and then simulated using a commercial software.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.5 s.311
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• pp.36-43
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• 2006

In this paper we present a new high-speed parallel multiplier for Performing the bit-parallel multiplication of two polynomials in the finite fields $GF(2^m)$. Prior to construct the multiplier circuits, we consist of the MOD operation part to generate the result of bit-parallel multiplication with one coefficient of a multiplicative polynomial after performing the parallel multiplication of a multiplicand polynomial with a irreducible polynomial. The basic cells of MOD operation part have two AND gates and two XOR gates. Using these MOD operation parts, we can obtain the multiplication results performing the bit-parallel multiplication of two polynomials. Extending this process, we show the design of the generalized circuits for degree m and a simple example of constructing the multiplier circuit over finite fields $GF(2^4)$. Also, the presented multiplier is simulated by PSpice. The multiplier presented in this paper use the MOD operation parts with the basic cells repeatedly, and is easy to extend the multiplication of two polynomials in the finite fields with very large degree m, and is suitable to VLSI. Also, since this circuit has a low propagation delay time generated by the gates during operating process because of not use the memory elements in the inside of multiplier circuit, this multiplier circuit realizes a high-speed operation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.11A
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• pp.1263-1270
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• 2004

A low-power 64-point FFT/IFFT processor core is designed, which is an essential block in OFDM-based wireless LAM modems. The radix-2/418 DIF (Decimation-ln-Frequency) FFT algorithm is implemented using R2SDF (Radix-2 Single-path Delay Feedback) structure. Some design techniques for low-power implementation are considered from algorithm level to circuit level. Based on the analysis on infernal data flow, some unnecessary switching activities have been eliminated to minimize power dissipation. In circuit level, constant multipliers and complex-number multiplier in data-path are designed using truncation structure to reduce gate counts and power dissipation. The 64-point FFT/IFFT core designed in Verilog-HDL has about 28,100 gates, and timing simulation results using gate-level netlist with extracted SDF data show that it can safely operate up to 50-MHz＠2.5-V, resulting that a 64-point FFT/IFFT can be computed every 1.3-${\mu}\textrm{s}$. The functionality of the core was fully verified by FPGA implementation using various test vectors. The average SQNR of over 50-dB is achieved, and the average power consumption is about 69.3-mW with 50-MHz＠2.5-V.