Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

We propose a new method to reduce the subthreshold leakage current. By moving the operating point of OFF state MOSFETs through input-controlled voltage generators, logic circuits with much lower leakage current can be built with few extra components. SPICE simulation results for the new inverter show correct logic results without speed degradation compared to a conventional inverter.

The (Sr/sub 0.9/Ca/sub 0.1/)TiO₃(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO₂/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O₂ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of 100～500[℃]. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of -80～+90[℃]. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

In this paper, we analytically examine the voltage transfer function dependent on input conditions for an N-Input NAND Gate. The logic threshold voltage, defined as a voltage at which the input and the output voltage become equal, changes as the input condition changes for a static NAND Gate. The logic threshold voltage has the highest value when all the N-inputs undergo transitions and it has the lowest value when only the last input connected to the last NMOS to ground, makes a transition. This logic threshold voltage difference increases as the number of inputs increases. Therefore, in order to provide a near symmetric voltage transfer function, a multistage N-Input Gate consisting of 2-Input Logic Gates is desirable over a conventional N-Input Gate.

In this study, we tried to investigate that the advantages of SOM(Self Organizing Map) algorithm such as data accumulation ability and the degradation trend trace ability would be adaptable to the analysis of partial discharge pattern recognition. For the purpose, we analyzed partial discharge data obtained from the typical artificial defects in GIS and XLPE power cable system through SOM algorithm. As a result, partial discharge pattern recognition could be well carried out with an acceptable error by use of Kohonen map in SOM algorithm. Also, it was clarified that the additional data could be accumulated during the operation of the algorithm. Especially, we found out that the data accumulation ability of Kohonen map could make it possible to suggest new patterns, which is impossible through the conventional BP(Back Propagation) algorithm. In addition, it is confirmed that the degradation trend could be easily traced in accordance with the degradation process. Therefore, it is expected to improve on-site applicability and to trace real-time degradation trends using SOM algorithm in the partial discharge pattern recognition

Faults of cellulosic insulations greatly affect the life span of oil immersed transformers because their performance recovery is impossible. Therefore, the reliable diagnosis technologies are needed for detection of the faults. Dissolved gas analysis technologies using CO and $CO_2$ gases have been widely used for fault diagnosis of cellulosic insulations. In this research, we described Degradation diagnosis of insulation paper CO and $CO_2$ gases in oil immersed Transformers using. We considered the distribution characteristics of CO, $CO_2$ gases' concentrations and ratios of $CO_2$/CO not only in serviced transformers but in experiments with typical fault causes such as heat, partial discharge and moisture. As result, the reliability of diagnosis results for the cellulosic insulations can be improved when the concentrations of CO, $CO_2$ and the ratio of CO/$CO_2$ satisfy each diagnosis criterion at a tim

A electromagnetic waves are used for sensing in insulation diagnosis at electric machine or equipment. When it a method, waves are transformed into the FFT(Fast Fourier Transform); a kind of the process for data transformation. In a general way, a scientist use frequncy band 30[㎒]～l[㎓] to applied field. If we are measured high frequency band, we will need to a high capacity hardware. Also a antenna has a fault on atmospheric phenomena, outside environment and the like. In this paper We proposed new method for detecting electric equipment faulty state using only electric voltage which is generally measured in the electric and electronic field. It is called the Partition-FFT The analytic method is this first divide measured voltage waves into equal parts, second each deal with give effect to the FFT, finally each results deal with a graphic method and gather graphic. We are compare Partition-FFT with discharge form by tracking tester. As the result it demonstrated that the Partition-FFT is applicable.

In this paper, we consider the problem of capacitance matrix calculation for strip-line and other interconnects crossings. The problem is formulated in the spectral domain using the method of moments. Sinc-functions are employed as basis functions. Conventionally, such a formulation leads to a large, non-sparse system of linear equations in which the calculation of each of the coefficient requires the evaluation of a Fourier-Bessel integral. Such calculations are computationally very intensive. In the method proposed here, we provide simplified expressions for the coefficients in the moment method matrix. Using these simplified expressions, the coefficients can be calculated very efficiently. This leads to a fast evaluation of the capacitance matrix of the structure. Computer simulations are provided illustrating the validity of the method proposed.

Two fabrication approaches are proposed to planarize the sacrificial layer over hollow structures. One is the photoresist filling method that makes use of photolithography, thermal curing and plasma ashing. The other is the lamination method that is applying pressure and temperature to the organic film over the hollow structures. The fabrication results are compared with those of CMP process. Trenches and cavities with various dimensions have been made for the porposed process. Upon measuring the planarization levels, they are dependent on planarization methods and the geometrical size of hollow structures. The photoresist filling method is so strongly dependent on the width and depth of trenches that we have problems to use it for large dimensional trenches. To the contrary, the flatness of sacrificial layer over the trenches was found to be almost independent of trench dimensions for the lamination method. A CMP process shows the most excellent results, but the fabrication is complicated and the access to it is not so easy. It is important to choose the proper planarization method by considering the required flatness levels, materials to be planarized, and connection between the planarization step and the previous or the following process of it.