The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.

The properties variation by deterioration of the 600V grade heat-resistant polyvinyl chloride insulated wire(HIV) was analyzed. The weight variation of the thermal deteriorated HIV was about 42% at 80$0^{\circ}C$ and over. From the analysis result of the metallurgical microscope photographs it shows that the sorface of normal wire showed the elongated structures. However the elongated structures did not appear at $900^{\circ} and over and we could observe that particles were grown. The grown oxidized substances in the thermally deteriorated electric wire were observed by SEM. The CuL, CuK, $CuK_b$, OK and CIK spectra of the thermally deteriorated HIV at $300^{\circ}C$ were uniform regardless of the scanning length, but the spectra of CIK could not found at above $700^{\circ}. At the DTA analysis, the endothermic reactions were occurred around $3006{\circ}C\; and\; 400^{\circ}C$ and the exothermic reactions were occurred around $470^{\circ}, respectively.

We have fabricated LB ultra-thin films of maleate system by LB technique and evaluated the deposited status of LB ultra-thin films by I-V characteristics such as capacitance. It was found that the thickness of LB ultra-thin per layer is $27~30[{\AA}]$ by XRD. And, we have known that the conductivity along the horizontal direction of LB ultra-thin films was about $10^{-8}[S/cm]$, it corresponds to the semiconducting materials. Also, the I-V characteristics along the vertical direction of LB ultra-thin films was dominated by Schottky type current, the activation energy obtained by current-temperature characteristics was about 0.84[eV] and the conductivity was about $10^{-14}[S/cm]$, it corresponds to the insulator. And, the anisotropic conduction mechanism of the LB ultra-thin films in vertical direction and horizontal direction is determined by the hydrophilic group and the hydrophobic group in LB ultra-thin films. The above results are applicable to the semiconductor devices such as switching device, which function at the molecular level.

Partial discharges(PD)in air insulated electric power apparatus often lead to deterioration of solid insulation by electron bombardments and electrochemical reaction. The PD caused to reduce the life time of power apparatus and to increase power losses. Thus understanding and classification of PD patterns in air are very important to discern sources of PD. In this paper, PD in air by using statistical methods was investigated. We classified air discharges, corona, surface discharges and cavity discharges by Kohonen network. For classification of PD patterns, we used statistical operators and parameters such as skewness$(S^+,\; S^-),\; kurtosis(K^+, K^-),\; mean phase(AP^+, AP^-)$, cross-correlation factor(CC) and asymmetry derived from the mean pulse-height phase distribution$(H_{avg}(\phi))$, the max pulse-height phase distribution $(H_{qmax}(\phi))$, the pulse count phase distribution $(H_n(\phi))$ and the pulse height vs. Repetition rate $(H_q(n))$.

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

The pulsed plasma wire-plate reactor was analyzed on the basis of experiment, EMTP simulation and modelling method. Though the reactor has a non-linear impedance characteristics, we demonstrate that the reactor impedance can be approximately analyzed with the measured initial capacitance and average resistive component of flat zone. Using this modelling method, the influence of the reactor capacitance on the impedance matching between pulse generator and reactor can be investigated. From this, we found that the energy of 95% was delivered form pulse generator to reactor at the ratio of $C_r/C_p\cong 0.3,\; where\; C_p\; is\; pulse\; generator\; capacitance, C_r$ is reactor capacitance.

In this experimental study we proposed the double dielectric barrier discharge (DDBD) reactor to produce as high an electric field as possible. The experiment are conducted for applied voltage from 15 to 20[kV], $1~4[\ell/min]$ of gas flow rate and 120[Hz] and 240[Hz] of pulse rate. Superposition discharge(SPD) generated in DDBD which combined the surface discharge with the silence discharge was the most effective to reduce the $NO_x$. In the decomposition efficiency per watt, the low pulse rate gave better efficiency than the high pulse rate. However in DeNOx rate, the high pulse rate gave better performance than the low pulse rate. $NO_x$ removal rate and efficiency increased with increasing the applied voltage in all reactors.

In this paper, using a wide-band AE sensor with the frequency range from 100[kHz] to 1.5[kHz], the frequency spectra of AE signals generated from the corona discharges of the needle-plane gap and from the partial discharges of an epoxy void were analyzed to determine the proper ultrasonic sensor with optimum frequency range according to the patterns of corona discharges. We also examined the propagation characteristics of AE signals in oil and the relationship between the magnitude of corona discharge and the magnitude of AE signals in peak-to-peak value under the application of 60[Hz] ac high-voltage. From these results, the main frequency spectra of AE signals emitted from the corona discharges of the needle-plane gap were about 130[kHz] by the fast fourier transform, but the main frequency spectra appeared to be 230[kHz] in the partial discharges of an epoxy void. The magnitude of AE signals was proportional to the magnitude of corona discharge and discharge current pulse with increasing the applied voltages.

Signal propagation in nonlinear optical fiber is analyzed numerically by using SS-FEM (Split-Step Finite Element Method). By adopting cubic element function in FEM, soliton equation of which exact solution was well known, has been solved. Also, accuracy of numerical results and computing times are compared with those of Fourier method, and we have found that solution obtained from using FEM was very relatively accurate. Especially, to reduce CPU time in matrix computation in each step, the matrix imposed by the boundary condition is approximated as a sparse matrix. As a result, computation time was shortened even with the same or better accuracy when compared to those of the conventional FEM and Fourier method.

For the Mo-tip field emitter array, the method by which the geometrical structure of the gate insulator wall could be modified in order to improve field emission properties(turn-on voltage and gate leakage current). The device having a gate insulator of complex shape, which means the combined geometrical structure with round shape made by wet etching and vertical shape made by dry etching processes, was fabricated and the field emission properties of the three kinds of devices were compared. As a result, the electric field applied to tip apex could be increased and gate leakage current could be decreased by employing the gate insulator having geometrical wall structure of mixed shape. Finally, the obtained empirical results were analyzed by simulation of electric field distribution at/near the tip apex and gate insulator using SNU-FEAT simulator.

This paper investigates the equeeze film damping of a perforated planar micromechanical structure that oscillates in the normal direction to the substrate. Special focus has been places on the effect of holes and edges of the perforated planar microstructures on the squeeze film damping of oscillatory motions. Theoretical models and test structures of the squeeze film damping have been developed for the transversely oscillating perforated plates. A set of nine different test structures, having three different sized with three different numbers of perforations, has been fabricated and tested. The experimental Q-factors, measured from the fabricated test structures, are compared with the theoretical values, estimated from finite element analysis. It is found that the finite element analysis overestimates the Q-factors up to 150% of the experimental values. Major discrepancy comes from the inaccuracy of the zero pressure condition, placed by the finite element analysis along the perforated edges.

In this paper, a spacer process for FED(Field Emission Display) was developed with the glass to glass anodic bonding technology using Al film as an interlayer and a 3.5 inch monochromatic type FED was fabricated. Holder to dislocate spacers vertically was designed with (110) Si wafer by bulk etching. Spacers, $100\mum\; width\; and\; 1000\mum$ height, were formed on anode panel by spacer to glass anodic bonding and the fabricated FED was operated for emission at 1㎸ anode voltage.