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A Study of The Voltage Transfer Function Dependent On Input Conditions For An N-Input NAND Gate  

Kim In-Mo (중앙대학교 전자전기공학부)
Song Sang-Hun (중앙대학교 전자전기공학부)
Kim Soo-Won (고려대학교 전자컴퓨터공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.10, 2004 , pp. 510-514 More about this Journal
Abstract
In this paper, we analytically examine the voltage transfer function dependent on input conditions for an N-Input NAND Gate. The logic threshold voltage, defined as a voltage at which the input and the output voltage become equal, changes as the input condition changes for a static NAND Gate. The logic threshold voltage has the highest value when all the N-inputs undergo transitions and it has the lowest value when only the last input connected to the last NMOS to ground, makes a transition. This logic threshold voltage difference increases as the number of inputs increases. Therefore, in order to provide a near symmetric voltage transfer function, a multistage N-Input Gate consisting of 2-Input Logic Gates is desirable over a conventional N-Input Gate.
Keywords
NAND; Voltage Transfer Function; Logic Threshold Voltage; Noise Margin;
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