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Influence of Substrate Temperature of SCT Thin Film by RF Sputtering Method  

Kim Jin-Sa (광운대 전기공학과)
Oh Yong-Cheol (광운대 전기공학과)
Cho Choon-Nam (광운대 전기공학과)
Lee Dong-Gyu (광운대 전기공학과)
Shin Cheol-Gi (광운대 전기공학과)
Kim Chung-Hyeok (광운대 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.10, 2004 , pp. 505-509 More about this Journal
Abstract
The (Sr/sub 0.9/Ca/sub 0.1/)TiO₃(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO₂/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O₂ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of 100～500[℃]. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of -80～+90[℃]. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.
Keywords
Thin Film; Substrate Temperature; Dielectric Constant; Leakage Current;
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Times Cited By KSCI : 1  (Citation Analysis)
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