When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.

The A S $r_{0.7}$B $i_{2.6}$T $a_2$ $O_{9}$ (SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/$SiO_2$/Si) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 75$0^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represent a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40C/$\textrm{cm}^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.8110$^{-10}$ A/$\textrm{cm}^2$, respectively.y.y.

We report a new excimer laser annealing method which successfully results in a single grain boundary formation in the channel of polycrystalline silicon thin film transistor. The proposed method is based on lateral grain growth and employs aluminum patterns which act as selective beam mask and lateral heat sink. The maximum grain size obtained by the proposed method is about 1.6${\mu}{\textrm}{m}$ in the length. The grainboundaries should be arranged parallel with the direction of current flow for the best device performance, so we propose a new device fabrication method and a new poly-Si TFT structure. Poly-Si TFT fabricated by the proposed method exhibits considerably improved electrical characteristics, such as high field effect mobility exceeding 240 $cm^2$/Vsec.

Lightning arresters are deteriorated by repetition of protective operation against overvoltages or impulse currents in environments of its use. If a deteriorated arrester is left in power lines, it can lead to an accident such as a line to ground fault even in a normal system. Therefore, it is necessary to eliminate the deteriorated arrester in advance by checking the soundness of arresters on a regular basis, and to ensure the reliability of power systems by preventing accidents. Various deterioration diagnostic techniques and devices are suggested, and most of which measure leakage current components as an indicator of arrester ageing. However, the techniques based on the magnitude of leakage current measure simply RMS or peak value of leakage current components and do not provide detailed information needed in the diagnosis. In this study, we found that the wave height distributions of the total leakage currents are remarkably changed or a new wave height are produced with the progress of arrester deterioration. To propose a new technique for the diagnosis, we designed a leakage current detection unit and an analysis program which can measure leakage current magnitudes and analyze wave height distributions. From the experimental results, we confirmed that the proposed technique by analyzing the wave height distribution can simply diagnose the mode of defects such as a partial damage and an existence of punctures in arresters as well as deterioration of arresters.

A longitudinal discharge heated copper vapor laser with internal diameter 28 mm and discharge length 1.3 m has been constructed and tested. At the discharging voltage 15.2 kV, pulse repetition rate 10 kHz, buffer gas pressure 40 mbar, and internal temperature of the laser plasma tube $1520^{\circ}C$, it delivers more than 30 W average laser outputs.

In this study, new type of induction charging system for electrostatic spraying was manufactured and proposed to improve the electrical safety and charging efficiency. And parameters of proposed system to generate the maximum deposition current with electrical safety were selected and investigated. The selected parameters were frequency of square pulse and thickness of insulation material, outer diameter of device and thickness and positions of electrode. Charging quantity of water drop was measured by deposition current detected from sensing plate indirectly. The maximum deposition current for each parameter were 3.5[uA] at the frequency of 15[kHz] and thickness of 0.25[mm] insulating layer. And maximum deposition currents were 2.8[uA] and 3.0[uA] at 25[mm] outer diameter of charging device and 0.25[mm] thickness of electrode each. Effects of electrode position from spraying nozzle on deposition current was a little.

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

We have developed the radio frequency excited slab waveguide $CO_2$ laser, The dimension of active area is $2{\times}40{\times}400$ mm to get a laser gain. Two pieces of concave mirror are used to make the unstable resonator of negative branch. The radio frequency is 123 MHz and RF input power is from 100 to 900 W. The laser gas is set to a pressure of 10 ∼ 60 torr and the mixing ration is $CO_2$:$N_2$:He=1:1:3. The laser output power of 50.9 W was obtained with laser power to RF power efficiency of 6.5 %.