ZnO thin films on (100) p-type silicon substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for oxygen gas flow rate of 100~700 sccm and substrate temperatures in the range of 200~$500^{\circ}C$. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction(XRD), scanning electron microscopy(SEM) and atomic force microscopy(AFM).

In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.

$Bi_{1.84}Pb_{0.34}Sr_{1.91}Ca_{2.03}Cu_{3.06}O_{10+\delta}$ high $T_{c}$ superconductors containing Ag as an additive were fabricated by a solid-state reaction method. The superconducting properties, such as the structural characteristics, the critical temperatures, the grain size and the image of mapping on the surface were investigated. Samples with Ag and Au of 50 wt% each were sintered at various temperature(820~$850^{\circ}C$). The structural characteristics, the microstructure of surface and the critical temperature with respect to the each samples were analyzed by XRD and SEM, EDS and four-prove methode respectively. The critical temperature showed the result which the Ag additive samples are higher than Au additive samples. The microstructure of the surface showed the tendency which the Ag additive samples become more minuteness than Au additive samples.

Samples with the nominal composition, Ag-$Bi_{1.84}Pb_{0.34}Sr_{1.91}Ca_{2.03}Cu_{3.06}O_{10+{\delta}}$ high $T_{c}$ superconductors containing Ag as an additive were fabricated by a solid-state reaction method. Samples with Ag of 10 wt%, 30 wt%, and 50 wt% each were sintered at $860^{\circ}C$~$870^{\circ}C$ for 24 hours. The structural characteristics, the microstructures and the critical temperature with respect to the each samples were investigated by XRD, four-prove methode, SEM and EDS respectively. The $T_{c}\;^{zero}$ of the sample with the 50 wt% Ag additive at the surface showed 94 K.

We have proposed the junction termination structure of IGBT (Insulated Gate Bipolar Transistor) by employing trench and FLR (Field Limiting Ring), which decrease the junction termination area at the same breakdown voltage. Our proposed junction termination structure, trench FLR is verified by numerical simulator MEDICI. In 600V rated device, the junction termination area is decreased 20% compared with that of the conventional FLR structure. The breakdown voltage of trench FLR with 4 trenches is 768 V, 99 % of ideal parallel-plane junction(1-D) $BV_ceo$.

We investigated the effect of oxygen plasma treatment of indium-tin oxide(ITO) surface on the performance of electroluminescence(EL) devices. ITO surface treated oxygen plasma has been analyzed using atomic force microscope(AFM) and X-ray photoelectron spectroscopy(XPS), to investigate the relations between the properties of the ITO surface and the properties of the current-voltage-luminance(I-V-L) characteristics of the fabricated OLED with the structure of ITO(plasma treatment) / TPD / Alq$_3$/ Al. It is found that the oxygen plasma treatment of ITO anode improve the hole injection of the OLED due to the modification of the surface states. The treated ITO anode nay be low voltage with high luminance efficiency.

The plasma display panel with the electrode structure of new discharge AND gate and its driving scheme were proposed and the driving system for experiment was developed. And operation of these discharge AND gate was verified by the experiment of PDP addressing with floating electrode. This discharge AND gate operated by the operation speed of 8$mutextrm{s}$ and the operation margin of 100V. The address operation margin of 10V also obtained. It was known to be able to control the discharge of the adjoining scan electrode accurately. Because proposed method uses the DC discharge the control of the discharge can be facilitated compared with conventional discharge AND gate. Moreover, because the input discharge and the output discharge of discharge gate are separate, the display discharge can be prevented from passing discharge gates. Therefore, it is possible to apply to the large screen plasma display panel. And the decrease of contrast ratio does not occur because the scanning discharge does not influence the picture quality.