lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

J-aggregates in the mutual mixing LB films of [6Me-DS]$_{1-x}$ [DO]$_{x}$,[DS]$_{1-x}$ [DO]$_{x}$ and [DSe]$_{1-x}$ [DO]$_{x}$ have been studied by optical absorption, fluorescence and surface pressure-area isotherms. In [6Me-DS]$_{1-x}$ [DO]$_{x}$ films, sharp J-band absorption and fluorescence of [6Me-DS] are linearly shifted to the longer wavelength for the replacement of [6Me-DS] by [DO]. According to the x, a smooth shift of the limited area has been cleared. In the [DS]-[DO] system, the J-band is enhanced at 1:1 composition and strong fluorescence is also observed. Also, the presence of phase separation was suggested in the [DSe]-[DO] system, because the absorption spectra were decomposed into [DSe] and [DO] spectra. On the other hand, in the pressure-area isothermal study, reduction in the molecular occupying area of monolayers has been clarified. This could be ascribed to the enhancement of molecular ordering in J-aggregates. These facts are also believed to reflect the most closely packed arrangement of chromophores in the merocyanine dye monolayers. Thus, it was confirmed that the interaction between mixed dye molecules and the CdC1$_2$+KHCO$_3$subphases affected the J-aggregates of the LB films. Also. it is thought that the J-aggregates are formed non-dimensionally in LB films, such as solution synthesized [DX:DO] assemblies on mixing.s on mixing.

Using the plasma that we developed to generate a low-temperature plasma at atmospheric pressure, we have investigated the etching possibility of an air-exposed zinc oxide(ZnO) thin films. Hydrogen and methane radicals generated from the plasma were observed and their intensity was found to be dependent on the isomer of butyl acetate by an analysis with optical emission spectrosxopy. The etching ability of this plasma was evaluated by an emission intensity, etching time, rf power.

This Paper describes an algorithm for the design of axi-symmetrical spacer under specified field conditions. The electric field alas been calculated by combination method of Integral Equation Method(IEM) and Charge Simulation Method(CSM). The contour of spacer is represented with NURB(Non-Uniform Rational B-spline) curve of which effectiveness has been proved. This algorithm introduces a design process in the aspect of electrical field, when a spacer in airtight cylinder is designed. Also various field conditions for obtaining optical shapes have been proposed. Due to the algorithm, the entire process shows a stable convergence. Both tangential and total electrical field are taken into consideration as specified field criteria.

CNTs(Carbon Nano Tube) were employed as an electron source in electron-gun of CRT(Cathode-Ray Tube). The CNTs were grown on the Si substrates and the electron gun by LP-CVD(Low Pressure-Chemical Vapor Deposition). Their physical and field emission property satisfied the requirements of the electron gun of CRT. The fabricated electron gun was inserted into 19 inch-sifted CRT and its operating properly was evaluated for practical usage.

In order to fabricate stable conductive polymer actuators which can be operated in air, conductivity and solidity of polymer electrolyte materials have been studied. It was found that Nafion+LiCl is appropriate material to be used for conductive polymer actuator. Using the Nafion+LiCl solid polymer electrolyte, single layer PPy actuators have been fabricated and their deflection was measured. Double layer PPy actuators make up for shortcoming of single layer PPy actuator and displacement and frequency response can be improved by fabrication of double layer PPy actuator. This kind of all-solid-polymer actuator can be used for practical applications.

Deep submicron NMOSFETs with elevated source/drain can be fabricated using self-aligned selective epitaxial growth(SEG) of silicon for enhanced device characteristics with shallow junction compared to conventional MOSFETs. Shallow junctions, especially with the heartily-doped S/D residing in the elevated layer, give hotter immunity to Yt roll off, drain-induced-barrier-lowering (DIBL), subthreshold swing (SS), punch-through, and hot carrier effects. In this paper, the characteristics of both deep submicron elevated source/drain NMOSFETs and conventional NMOSFETs were investigated by using TSUPREM-4 and MEDICI simulators, and then the results were compared. It was observed from the simulation results that deep submicron elevated S/D NMOSFETs having shallower junction depth resulted in reduced short channel effects, such as DIBL, SS, and hot carrier effects than conventional NMOSFETs. The saturation current, Idsat, of the elevated S/D NMOSFETs was higher than conventional NMOSFETs with identical device dimensions due to smaller sheet resistance in source/drain regions. However, the gate-to-drain capacitance increased in the elevated S/D MOSFETs compared with the conventional NMOSFETs because of increasing overlap area. Therefore, it is concluded that elevated S/D MOSFETs may result in better device characteristics including current drivability than conventional NMOSFETs, but there exists trade-off between device characteristics and fate-to-drain capacitance.