• 제목/요약/키워드: voltage gating

검색결과 73건 처리시간 0.022초

Permeation and Gating of Inward Rectifer Potassium Channels

  • Choe, Han;Palmer, Larry G.;Sackin, Henry
    • 한국생물물리학회:학술대회논문집
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    • 한국생물물리학회 2002년도 제9회 학술 발표회 프로그램과 논문초록
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    • pp.19-19
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    • 2002
  • The gating kinetics of an inward-rectifier K$\^$+/ channel, ROMK2 (Kir1.lb), were described by a model having one open state and two closed states. The long closed state was abolished by EDTA, suggesting that it was due to block by divalent cations. These closures exhibit a biphasic voltage-dependence, implying that the divalent blockers can permeate the channel.(omitted)

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Application of the H Infinity Control Principle to the Sodium Ion Selective Gating Channel on Biological Excitable Membranes

  • Hirayama, Hirohumi
    • International Journal of Control, Automation, and Systems
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    • 제2권1호
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    • pp.23-38
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    • 2004
  • We proposed the infinity control principle to evaluate the Biological function. The H infinity control was applied to the Sodium (Na) ion selective gating channel on the excitable cellular membrane of the neural system. The channel opening, closing and inactivation processes were expressed by movements of three gates and one inactivation blocking particle in the channel pore. The rate constants of the channel state transition were set to be voltage dependent. The temporal changes in amounts per unit membrane area of the channel states were expressed by means of eight differential equations. The biochemical mimetic used to complete the Na ion selective channel was regarded as noise. The control inputs for ejecting the blocking particle with plugging in the channel pore were set for the active transition from inactivated states to a closed or open state. By applying the H infinity control, we computed temporal changes in the channel states, observers, control inputs and the worst case noises. The present paper will be available for evaluating the noise filtering function of the biological signal transmission system.

Power-Gating Structure with Virtual Power-Rail Monitoring Mechanism

  • Lee, Hyoung-Wook;Lee, Hyun-Joong;Woo, Jong-Kwan;Shin, Woo-Yeol;Kim, Su-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권2호
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    • pp.134-138
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    • 2008
  • We present a power gating turn-on mechanism that digitally suppresses ground-bounce noise in ultra-deep submicron technology. Initially, a portion of the sleep transistors are switched on in a pseudo-random manner and then they are all turned on fully when VVDD is above a certain reference voltage. Experimental results from a realistic test circuit designed in 65nm bulk CMOS technology show the potential of our approach.

나노미터 MOSFET 파워 게이팅 구조의 노화 현상 분석 (Analysis of Aging Phenomena in Nanomneter MOSFET Power Gating Structure)

  • 이진경;김경기
    • 센서학회지
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    • 제26권4호
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    • pp.292-296
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    • 2017
  • It has become ever harder to design reliable circuits with each nanometer technology node under normal operation conditions, a transistor device can be affected by various aging effects resulting in performance degradation and eventually design failure. The reliability (aging) effect has traditionally been the area of process engineers. However, in the future, even the smallest of variations can slow down a transistor's switching speed, and an aging device may not perform adequately at a very low voltage. Because of such dilemmas, the transistor aging is emerging as a circuit designer's problem. Therefore, in this paper, the impact of aging effects on the delay and power dissipation of digital circuits by using nanomneter MOSFET power gating structure has been analyzed.. Based on this analyzed aging models, a reliable digital circuits can be designed.

설계툴을 사용한 저전력 SoC 설계 동향 (Low Power SoC Design Trends Using EDA Tools)

  • 박남진;주유상;나중찬
    • 전자통신동향분석
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    • 제35권2호
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    • pp.69-78
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    • 2020
  • Small portable devices such as mobile phones and laptops currently display a trend of high power consumption owing to their characteristics of high speed and multifunctionality. Low-power SoC design is one of the important factors that must be considered to increase portable time at limited battery capacities. Popular low power SoC design techniques include clock gating, multi-threshold voltage, power gating, and multi-voltage design. With a decreasing semiconductor process technology size, leakage power can surpass dynamic power in total power consumption; therefore, appropriate low-power SoC design techniques must be combined to reduce power consumption to meet the power specifications. This study examines several low-power SoC design trends that reduce semiconductor SoC dynamic and static power using EDA tools. Low-power SoC design technology can be a competitive advantage, especially in the IoT and AI edge environments, where power usage is typically limited.

Highly-Efficient Optical Gating in Vanadium Dioxide Junction Device

  • Lee, Yong-Wook
    • 센서학회지
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    • 제20권4호
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    • pp.230-233
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    • 2011
  • In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

High-Performance Optical Gating in Junction Device based on Vanadium Dioxide Thin Film Grown by Sol-Gel Method

  • Lee, Yong-Wook;Kim, Eung-Soo;Shin, Bo-Sung;Lee, Sang-Mae
    • Journal of Electrical Engineering and Technology
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    • 제7권5호
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    • pp.784-788
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    • 2012
  • In this paper, a high-performance optical gating in a junction device based on a vanadium dioxide dioxide ($VO_2$) thin film grown by a sol-gel method was experimentally demonstrated by directly illuminating the $VO_2$ film of the device with an infrared light at ~1554.6 nm. The threshold voltage of the fabricated device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which was ~4.9 times as large as that obtained in the previous device fabricated using the $VO_2$ thin film deposited by a pulsed laser deposition method. The rising and falling times of the optical gating operation were measured as ~50 ms and ~200 ms, respectively, which were ~20 times as rapid as those obtained in the previous device.

Electrophysiological characteristics of R47W and A298T mutations in CLC-1 of myotonia congenita patients and evaluation of clinical features

  • Chin, Hyung Jin;Kim, Chan Hyeong;Ha, Kotdaji;Shin, Jin Hong;Kim, Dae-Seong;So, Insuk
    • The Korean Journal of Physiology and Pharmacology
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    • 제21권4호
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    • pp.439-447
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    • 2017
  • Myotonia congenita (MC) is a genetic disease that displays impaired relaxation of skeletal muscle and muscle hypertrophy. This disease is mainly caused by mutations of CLCN1 that encodes human skeletal muscle chloride channel (CLC-1). CLC-1 is a voltage gated chloride channel that activates upon depolarizing potentials and play a major role in stabilization of resting membrane potentials in skeletal muscle. In this study, we report 4 unrelated Korean patients diagnosed with myotonia congenita and their clinical features. Sequence analysis of all coding regions of the patients was performed and mutation, R47W and A298T, was commonly identified. The patients commonly displayed transient muscle weakness and only one patient was diagnosed with autosomal dominant type of myotonia congenita. To investigate the pathological role of the mutation, electrophysiological analysis was also performed in HEK 293 cells transiently expressing homo-or heterodimeric mutant channels. The mutant channels displayed reduced chloride current density and altered channel gating. However, the effect of A298T on channel gating was reduced with the presence of R47W in the same allele. This analysis suggests that impaired CLC-1 channel function can cause myotonia congenita and that R47W has a protective effect on A298T in relation to channel gating. Our results provide clinical features of Korean myotonia congenita patients who have the heterozygous mutation and reveal underlying pathophyological consequences of the mutants by taking electrophysiological approach.

Intrinsic Gating in Inward Rectifier Potassium Channels (Kir2.1) with Low Polyamine Affinity Generated by Site Directed Mutagenesis

  • So, I.;Ashmole, I.;Soh, H.;Park, C.S.;Spencer, P.J.;Leyland, M.;Stanfield, P.R.
    • The Korean Journal of Physiology and Pharmacology
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    • 제7권3호
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    • pp.131-142
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    • 2003
  • We have studied mutant forms of Kir2.1 in which an aspartate residue (D172), important for gating by intracellular polyamines, is replaced by one of three basic residues (Arg, Lys or His). Such channels are highly selective for $K^+$, but show inward rectification that is a shallow function of voltage compared with that found in wild type. This inward rectification occurs with a reduced affinity for spermine and persists in the absence of polyamines. Though the unitary current-voltage relation shows some inward rectification, it is insufficient to account for that seen under whole cell recording. Channels open and shut under single channel recording, and changes of $P_{open}$ appear to generate inward rectification. In D172H, the reduction in affinity for spermine is greater when His is protonated at low $pH_i$. The effective valency for spermine is reduced from $3.09{\pm}0.07$ in wild type to $1.95{\pm}0.09$ in D172H at $pH_i$ 6.3. In the presence of dual mutants of Kir2.1, where E224 is also replaced, spermine affinity becomes undetectable. However, channels still show inward rectification and open and shut under hyper- and depolarisation, respectively. We suggest that Kir2.1 channel are able to undergo conformation changes; these changes may be important physiologically in generating inward rectification, the normal parameters of which are set by the binding of polyamines such as spermine.

나노미터 디지털회로의 노화효과를 보상하기위한 새로운 적응형 회로 설계 (Design of a new adaptive circuit to compensate for aging effects of nanometer digital circuits)

  • 김경기
    • 한국산업정보학회논문지
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    • 제18권6호
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    • pp.25-30
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    • 2013
  • 나노크기 MOSFET 공정에서 회로의 신뢰도에 영향을 미치는 음 바이어스 온도 불안정성(NBTI), 핫 캐리어 주입(HCI), 시간 의존 유전체 파손(TDDB) 등과 같은 노화 현상들에 의해서 회로 성능의 심각한 저하를 가져올 수 있다. 그러므로, 본 논문에서는 디지털회로에서 발생할 수 있는 노화를 극복할 수 있는 적응형 보상 회로를 제안하고자 한다. 제안된 보상회로는 노화에 의해 감소하는 회로 성능을 적응적으로 보상해 주기 위해서 노화 정도에 따라 파워스위치 폭을 조절할 수 있고, 순방향 바디 바이어싱 전압을 걸어줄 수 있는 파워 게이팅 구조를 사용하여서 45nm의 공정기술에서 설계되었다.