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http://dx.doi.org/10.5369/JSST.2011.20.4.230

Highly-Efficient Optical Gating in Vanadium Dioxide Junction Device  

Lee, Yong-Wook (School of Electrical Engineering, Pukyong National Unversity Gaon)
Publication Information
Journal of Sensor Science and Technology / v.20, no.4, 2011 , pp. 230-233 More about this Journal
Abstract
In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.
Keywords
Vanadium Dioxide; Thin Film; Junction Device; Photo-Induced Phase Transition;
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