Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

Highly-Efficient Optical Gating in Vanadium Dioxide Junction Device

  • Lee, Yong-Wook (School of Electrical Engineering, Pukyong National Unversity Gaon)
  • Received : 2011.06.21
  • Accepted : 2011.07.17
  • Published : 2011.07.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

Keywords

References

  1. S. Lysenko, A.J. Rua, V. Vikhnin, J. Jimenez, F. Fernandez, and H. Liu, "Light-induced ultrafast phase transitions in $VO_2$ thin film", Appl. Surf. Sci., vol. 252, pp. 5512-5515, 2006. https://doi.org/10.1016/j.apsusc.2005.12.137
  2. C. Chen, X. Yi, X. Zhao, and B. Xiong, "Characterizations of $VO_2$-based uncooled microbolometer linear array", Sens. Actuators A, vol. 90, pp. 212-214, 2001. https://doi.org/10.1016/S0924-4247(01)00495-2
  3. B.-J. Kim, Y. W. Lee, B.-G. Chae, Sun Jin Yun, S.-Y. Oh, H.-T. Kim, and Y.-S. Lim, "Temperature dependence of the first-order metal-insulator transition in $VO_2$ and programmable critical temperature sensor", Appl. Phys. Lett., vol. 90, pp. 023515(1-3), 2007.
  4. H.-T. Kim, B.-G. Chae, D.-H. Youn, S.-L. Maeng, G. Kim, K.-Y. Kang, and Y.-S. Lim, "Mechanism and observation of Mott transition in $VO_2$-based two-and three-terminal devices", New J. Phys., vol. 6, pp. 52-70, 2004. https://doi.org/10.1088/1367-2630/6/1/052
  5. C.-R. Cho, S. I. Cho, S. Vadim, R. Jung, and I. Yoo, "Current-induced metal-insulator transition in VOx thin film prepared by rapid-thermal-annealing", Thin Solid Films, vol. 495, pp. 375-379, 2006. https://doi.org/10.1016/j.tsf.2005.08.241
  6. Y. W. Lee, B.-J. Kim, S. Choi, H.-T. Kim, and G. Kim, "Photo-assisted electrical gating in a two-terminal device based on vanadium dioxide thin film", Opt. Express, vol. 15, no. 19, pp. 12108-12113, 2007. https://doi.org/10.1364/OE.15.012108
  7. B.-G. Chae, H.-T. Kim, S. J. Yun, Y. W. Lee, B.-J. Kim, D.-H. Youn, and K.-Y. Kang, "Highly oriented $VO_2$ thin films prepared by sol-gel deposition", Electrochem. Solid-State Lett., vol. 9, no. 1, pp. C12-C14, 2006. https://doi.org/10.1149/1.2135430
  8. B.-J. Kim, G. Seo, Y. W. Lee, S. Choi, and H.-T. Kim, "Linear characteristics of a metal-insulator transition voltage and oscillation frequency in $VO_2$ devices", IEEE Electron Device Lett., vol. 31, no. 11, pp. 1314-1316, 2010. https://doi.org/10.1109/LED.2010.2068275