• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.27-30
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• 2004

In this paper, a new small size Lateral Trench Electrode Power MOSFET is proposed. This new structure, called "LTEMOSFET"(Lateral Trench Electrode Power MOSFET), is based on the conventional MOSFET. The entire electrode of LTEMOSFET is placed in trench oxide. The forward blocking voltage of the proposed LTEMOSFET is improved by 1.6 times with that of the conventional MOSFET. The forward blocking voltage of LTEMOSFET is 250V. At the same size, a increase of the forward blocking voltage of about 1.6 times relative to the conventional MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide, the electric field in the device are crowded to trench oxide. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.551-554
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• 2014

This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was $90^{\circ}$, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.

• ETRI Journal
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• 제34권1호
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• 한국정보통신학회논문지
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• 제14권6호
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• pp.1460-1464
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• 2010

본 논문에서는 MicroTec을 이용하여 Trench D-MOSFET의 항복전압을 분석하였다. 소자의 고집적을 위한 특성 분석 기술은 빠른 변화를 보이고 있다. 이에 따라 고집적 소자의 특성을 시뮬레이션을 통하여 이해하고 이에 맞게 제작하는 기술은 매우 중요한 과제 중의 하나가 되었다. Trench MOSFET은 고전압에서 가장 선호하는 전원장치이다. Trench MOSFET에서 산화막 두께와 도핑농도는 항복전압의 크기를 결정하며 고전압에 커다란 영향을 미치고 있다. 본 연구에서는 채널의 도핑 농도를 $10^{15}cm^{-3}$에서 $10^{17}cm^{-3}$까지 변화시켜 도핑 농도에 따른 항복전압 특성을 조사하였다. 또한 게이트 산화막 두께와 접합깊이를 변화시켜 항복전압 특성을 분석하였다.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.385-390
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• 2023

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.13-15
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• 2002

The trench MOSFET structure is characterized by reduced on-resistance due to elimination of $R_{JFET}$ and high packing density. An analytical calculation of Ron as the sum of $R_{ch}$ and $R_{epi}$ has been reported previously for the trench MOSFET structure. However, the accumulation layer resistance may not be neglected for Trench MOSFET especially for a relatively large value of the cell spacing, where a major contribution to Ron comes from Ra as the simulation results in this paper shows.

• 한국진공학회지
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• 제11권4호
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• pp.212-217
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• 2002

고신뢰성 트렌치 게이트 MOSFET을 제작하기 위해 트렌치 코너를 pull-back 공정과 수소 열처리 공정을 이용하여 트렌치 코너를 둥글게 만드는 기술을 개발하였고 이를 이용하여 균일한 트렌치 게이트 산화막을 성장시킬수 있었다. 그 결과 수소 열처리 하기 전에 항복전압이 29 V인 것이 수소 열처리한 후 약 36 V로 증가하여 항복 전압에서 약 25% 향상되었다. 그리고 트렌치 게이트를 이용한 MOSFET에서 트렌치 셀이 약 45,000개 일때 게이트와 소스에 10 V를 인가했을 때, 드레인 전류는 약 45.3 A를 얻었고, 게이트 전압의 10 V, 전류를 5 A를 인가한 상태에서 On-저항은 약 55 m$\Omega$ 얻었다.

• 전기전자학회논문지
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• 제17권3호
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• pp.365-370
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• 2013

Power MOSFET is developed in power savings, high efficiency, small size, high reliability, fast switching, and low noise. Power MOSFET can be used in high-speed switching transistors devices. Recently attention given to the motor and the application of various technologies. Power MOSFET is a voltage-driven approach switching device and designed to handle on large power, power supplies, converters, motor controllers. In this paper, the 400 V Planar type, and the trench type for realization of low on-resistance are designed. Trench Gate Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.

• 한국항행학회논문지
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• 제18권4호
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• pp.364-370
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• 2014

본 논문에서는 트렌치 게이트 MOSFET에 적용을 위한 고 신뢰성을 갖는 트렌치 형성기술과 고품격의 제조기술을 제안하였다. 이는 향후 전력용 MOSFET 에 널리 적용이 가능하다. 트렌치 구조는 DMOSFET에서 셀 피치크기를 줄여서 Ron 특성을 개선하거나 대다수 전력용 IC에서 전력용 소자를 다른 CMOS(Complementary Metal Oxide Semiconductor) 소자로부터 독립시킬 목적으로 채용된다. 마스크 레이어를 사용하여 자기정렬기술과 산화막 스페이서가 채용된 고밀도 트렌치 MOSFET를 제작하기 위한 새로운 공정방법을 구현하였다. 이 기술은 공정 스텝수를 감소시키고 트렌치 폭과 소오스, p-body 영역을 감소시킴으로써 결과적으로 셀 밀도와 전류 구동성능을 증가시키며 온 저항의 감소를 가져왔다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.19-22
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• 2003

In this paper, a new small size Lateral Trench Electrode Power MOSFET with local doping is proposed. This new structure is based on the conventional lateral power MOSFET. The entire electrodes of proposed device are placed in trench oxide. The forward blocking voltage of the proposed device is improved by 3.3 times with that of the conventional lateral power MOSFET. The forward blocking voltage of proposed device is about 500V. At the same size, a increase of the forward blocking voltage of about 3.3 times relative to the conventional lateral power MOSFET is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide respectively, the electric field in the device are crowded to trench oxide. And because of the structure which has a narrow drain doping width, the punch through breakdown can be occurred in higher voltage than that of conventional lateral power MOSFET. We observed that the characteristics of the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.