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http://dx.doi.org/10.6109/jkiice.2010.14.6.1460

Analysis of Breakdown voltage for Trench D-MOSFET using MicroTec  

Jung, Hak-Kee (군산대학교 전자공학과)
Han, Ji-Hyung (군산대학교 전자정보공학부)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.14, no.6, 2010 , pp. 1460-1464 More about this Journal
Abstract
In the paper, the breakdown voltage of Trench D-MOSFET have been analyzed by using MircoTec. The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. A Trench MOSFET is the most preferred power device for high voltage power applications. The oxide thickness and doping concentration in Trench MOSFET determines breakdown voltage and extensively influences on high voltage. We have investigated the breakdown voltage characteristics according to variation of doping concentration from $10^{15}cm^{-3}$ to $10^{17}cm^{-3}$ in this study. We have also investigated the breakdown voltage characteristics according to variation of oxide thickness and junction depth.
Keywords
Trench D-MOSFET; Breakdown voltage; Oxide thickness; Doping concentration;
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