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http://dx.doi.org/10.4313/JKEM.2014.27.9.551

Study on Latch Up Characteristics of Super Junction MOSFET According to Trench Etch Angle  

Chung, Hun Suk (Department of Photovolatic Engineering, Far East University)
Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.9, 2014 , pp. 551-554 More about this Journal
Abstract
This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was $90^{\circ}$, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.
Keywords
Super juction; Latch up; n-pillar; p-pillar; On-resistance; Breakdown voltage; Trench angle; Power devices; Power MOSFET; Epi-layer; Latch-up;
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