• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.3
• /
• pp.148-152
• /
• 2009

Recent CMOS technology scaling has seriously eroded the bit-line noise immunity of register files due to the consequent increase in active bit-line leakage currents. To restore its noise immunity while maintaining performance, we propose and evaluate a $256{\times}40$-bit register file incorporating dual-$V_t$ bit-lines with a boosted gate overdrive voltage in 65 nm bulk CMOS technology. Simulation results show that the proposed bootsrapping scheme lowers leakage current by a factor of 450 without its performance penalty.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.729-734
• /
• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of IKEEE
• /
• v.20 no.2
• /
• pp.192-195
• /
• 2016

In this paper, we present a nanopower CMOS bandgap voltage reference working in sub-threshold region without resisters and bipolar junction transistors (BJT). Complimentary to absolute temperature (CTAT) voltage generator was realized by using two n-MOSFET pair with body bias circuit to make a sufficient amount of CTAT voltage. Proportional to absolute temperature (PTAT) voltage was generated from differential amplifier by using different aspect ratio of input MOSFET pair. The proposed circuits eliminate the use of resisters and BJTs for the operation in a sub-1V low supply voltage and for small die area. The circuits are implemented in 0.18um standard CMOS process. The simulation results show that the proposed sub-BGR generates a reference voltage of 290mV, obtaining temperature coefficient of 92 ppm/$^{\circ}C$ in -20 to $120^{\circ}C$ temperature range. The circuits consume 15.7nW at 0.63V supply.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.4
• /
• pp.269-274
• /
• 2004

Current delivery system, in which the analog current produced by a unique DAC circuit is stored into a current-memory circuit and delivered in a time-divided sequence, shows variation of output current as low as 4% in a current source data-driver IC for AM-OLED driven by a current-programmed method without any fuse repairing after fabrication. This driver IC has 54 outputs and can sink constant current as low as 3 ${\mu}A$ with 6-bit analog levels. Such a low current level without variation can hardly be obtained by an ordinary MOS transistor because the current level is in the sub-threshold region and changes exponentially with threshold voltage variation. Thus we adopted a current mirror circuit composed of bipolar transistors to supply well-controlled current within a nano-ampere range.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.11 no.7
• /
• pp.665-670
• /
• 2016

In this paper, we suggest the design of OP-AMP using MOSFET in the operation of sub-threshold condition as a basic unit of an IoT. The sub-threshold operation of MOSFET is useful for an ultra low power consumption of sensor network system in the IoT, because it cause the supply voltage to be reduced. From the simulation result using 0.35 um CMOS process, the supply voltage, VDD can be reduced with 0.6 V, open-loop gain of 43 dB and the power consumption was evaluated with about $1.3{\mu}W$ and the active size for an integration was measured with $64{\mu}m{\times}105{\mu}m$. It is expected that the proposed circuit is applied to the low power sensor network for IoT.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.3
• /
• pp.331-338
• /
• 2014

A charge-pump circuit using a current-bypass technique, which suppresses charge sharing and reduces the sub-threshold currents, helps to decrease phase-locked loop (PLL) jitter without resorting to a feedback amplifier. The PLL shows no stability issues and no power-up problems, which may occur when a feedback amplifier is used. The PLL is implemented in 0.11-${\mu}m$ CMOS technology to achieve 0.856-ps RMS and 8.75-ps peak-to-peak jitter, which is almost independent of ambient temperature while consuming 4 mW from a 1.2-V supply.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.6
• /
• pp.647-654
• /
• 2013

The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.

• ETRI Journal
• /
• v.31 no.5
• /
• pp.585-592
• /
• 2009

This paper presents a method for decoding high minimal distance ($d_{min}$) short codes, termed Cortex codes. These codes are systematic block codes of rate 1/2 and can have higher$d_{min}$ than turbo codes. Despite this characteristic, these codes have been impossible to decode with good performance because, to reach high $d_{min}$, several encoding stages are connected through interleavers. This generates a large number of hidden variables and increases the complexity of the scheduling and initialization. However, the structure of the encoder is well suited for analog decoding. A proof-of-concept Cortex decoder for the (8, 4, 4) Hamming code is implemented in subthreshold 0.25-${\mu}m$ CMOS. It outperforms an equivalent LDPC-like decoder by 1 dB at BER=$10^{-5}$ and is 44 percent smaller and consumes 28 percent less energy per decoded bit.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.2
• /
• pp.134-138
• /
• 2008

We present a power gating turn-on mechanism that digitally suppresses ground-bounce noise in ultra-deep submicron technology. Initially, a portion of the sleep transistors are switched on in a pseudo-random manner and then they are all turned on fully when VVDD is above a certain reference voltage. Experimental results from a realistic test circuit designed in 65nm bulk CMOS technology show the potential of our approach.

• Journal of the Korean Institute of Telematics and Electronics C
• /
• v.36C no.8
• /
• pp.10-21
• /
• 1999

This paper describes a 12bit CMOS current cell matrix D/A converter which shows a conversion rate of 65MHz and a power supply of 3.3V. Designed D/A converter utilizes current cell matrix structure with good monotonicity characteristic and fast settling time, and it is implemented by using the tree structure bias circuit, the symmetrical routing method with ground line and the cascode current switch to reduce the errors of the conventional D/A converter caused by a threshold voltage mismatch of current cells and a voltage drop of the ground line. The designed D/A converter was implemented with a $0.6{\mu}m$ CMOS n-well technology. The measured data shows a settling time of 20ns, a conversion rate of 50 MHz and a power dissipation of 35.6mW with a single power supply of 3.3V. The experimental SNR, DNL, and INL of the D/A converter is measured to be 55dB, ${\pm}0.5LSB$, and ${\pm}2LSB$, respectively.