• ETRI Journal
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• 제41권6호
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.159-165
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• 2016

Recently, active efforts are being made for future Si CMOS technology by various researches on emerging devices and materials. Capability of low power consumption becomes increasingly important criterion for advanced logic devices in extending the Si CMOS. In this work, a junctionless field-effect transistor (JLFET) with ultra-thin poly-Si (UTP) channel is designed aiming the sub-10-nm technology for low-power (LP) applications. A comparative study by device simulations has been performed for the devices with crystalline and polycrystalline Si channels, respectively, in order to demonstrate that the difference in their performances becomes smaller and eventually disappears as the 10-nm regime is reached. The UTP JLFET would be one of the strongest candidates for advanced logic technology, with various virtues of high-speed operation, low power consumption, and low-thermal-budget process integration.

• 한국산업정보학회논문지
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• 제17권4호
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• pp.17-23
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• 2012

초저전력 설계나 에너지 수확 활용은 동적 전력과 정적 전력 사이의 균형을 이루는 점에 근접하는 문턱전압이하의 매우 낮은 전압에서 작동하는 디지털 시스템을 요구한다. 이런 동작 모드에서 일반적인 논리회로의 지연 변화는 매우 크게 된다. 따라서, 본 논문에서 MOSFET 나노 공정기술에서 전력소비를 줄이면서 여러 가지 공정 변이의 영향을 받지 않는 비동기 방식의 NCL (Null conventional logic)을 사용한 저전력 논리회로 설계 방법을 제안하고자 한다. 제안된 NCL 회로는 45nm의 공정기술에서 0.4V의 공급전압을 사용하였고, 각 NCL회로는 속도와 전력에 의해서 일반적인 동기식 회로와 비교되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
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• pp.112-115
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• 2003

Sub-90nm급 high speed 소자를 위해서는 extension영역의 shallow junction과 sheet 저항의 감소가 필수적이다. 일반적으로 기생저항은 channel저항의 약 10-20%정도를 차지하도록 제작되므로, 이를 최소화하여 optimize하기 위해서는 기생저항에 대한 성분 분리와 이들이 가지는 저항값에 대한 정량적 계산이 이루어져야 한다. 이에 본 논문은 calibration된 TCAD simulation을 통해 90nm급 Tr. 에서 각 영역의 저항성분을 계산, 평가하는 방법을 제시한다. 이 결과, 특히, extension영역의 표면-accumulation부분이 가장 개선이 있어야 할 부분으로 분석되었으며, 이 저항은 gate하부에 존재하는 extension으로부터 발if되는 측면 doping의 tail영역으로 인해 형성되는 것으로,doping의 abruptness가 가장 중요한 factor인 것으로 판단된다.

• 우주기술과 응용
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• 제4권1호
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• pp.12-26
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• 2024

Attitude control of a satellite is very important to ensure proper for mission performance. Satellites launched in the past had simple missions. However, recently, with the advancement of technology, the tasks to be performed have become more complex. One example relies on a new technology that allows satellites quickly alter their attitude while orbiting in space. Currently, one of the most widely used technologies for satellite attitude control is the reaction wheel. However, the amount of torque generated by reaction wheels is too low to facilitate quick maneuvers by the satellite. One way to overcome this is to implement posture control logic using a control moment gyroscope (CMG). Various types of CMGs have been applied to space systems, and CMGs are currently mounted on large-scale satellites. However, although technological advancements have continued, the market for CMGs applicable to, small satellites remains in its early stages. An ultra-small CMG was developed for use with small satellites weighing less than 200 kg. The ultra-small CMG measured its target performance outcomes using a precision torque-measuring device. The target performance of the CMG, at 800 mNm, was set through an analysis. The final torque of the CMG produced through the design after the analysis was 821mNm, meaning that a target tolerance level of 10% was achieved.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.423-429
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• 2013

A 6-Gb/s differential voltage mode driver is presented whose output impedance and pre-emphasis level can be controlled independently. The voltage mode driver consists of five binary-weighted slices each of which has four sub-drivers. The output impedance is controlled by the number of enabled slices while the pre-emphasis level is determined by how many sub-drivers in the enabled slices are driven by post-cursor input. A prototype transmitter with a voltage-mode driver implemented in a 65-nm CMOS logic process consumes 34.8-mW from a 1.2-V power supply and its pre-emphasized output signal shows 165-mVpp,diff and 0.56-UI eye opening at the end of a cable with 10-dB loss at 3-GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.165-175
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• 2010

This paper presents a fine-grain supply-voltage-control scheme for low-power FPGAs. The proposed supply-voltage-control scheme detects the critical path in real time with small overheads by exploiting features of asynchronous architectures. In an FPGA based on the proposed supply-voltage-control scheme, logic blocks on the sub-critical path are autonomously switched to a lower supply voltage to reduce the power consumption without system performance degradation. Moreover, in order to reduce the overheads of level shifters used at the power domain interface, a look-up-table without level shifters is employed. Because of the small overheads of the proposed supply-voltage-control scheme and the power domain interface, the granularity size of the power domain in the proposed FPGA is as fine as a single four-input logic block. The proposed FPGA is fabricated using the e-Shuttle 65 nm CMOS process. Correct operation of the proposed FPGA on the test chip is confirmed.

• 전자공학회논문지
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• 제50권5호
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• pp.83-93
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• 2013

최근 영상처리 응용의 일환으로 객체 추적 시스템에 많이 활용되는 SURF 알고리즘의 경우 영상의 회전 및 크기 변화에 강인한 특이점을 추출한다는 특징이 있지만 연산이 복잡하고 연산량이 많아 임베디드 환경에서 IP로 사용되기 위해서는 하드웨어 가속기 개발이 필수적이다. 하지만 이 때 요구되는 내부 메모리 사이즈가 매우 크기 때문에 ASIC이나 SoC 시스템으로 개발 할 때 칩 회로 사이즈가 커서 IP의 가치를 떨어뜨리게 된다. 본 논문에서는 하드웨어 가속기 개발 시 회로면적에 효율적인 설계를 위해 내부 블록메모리 사용량을 줄이고 외부 메모리와 DMA를 사용하여 세분화된 Sub-IP 구조로 설계하는 것에 대해 연구하고 간단한 객체 추적 알고리즘을 개발하여 그 결과를 적용하였다. ARM Cortex-M0, AHB-lite, APB, DMA, SDRAM Controller로 구성된 시스템 환경에서 실험 결과 VGA(640x480)영상에서 SURF 알고리즘의 처리속도는 약 31frame/sec, 블록 메모리의 크기는 81Kbytes, 30nm 공정에서 회로의 크기는 약 74만 게이트 크기로 SoC 칩의 하드웨어 IP로 활용이 가능하였다. SURF와 비슷한 영상처리 알고리즘에서도 본 논문에서 제안하는 설계방법을 적용하면 타겟 어플리케이션에 효율적인 하드웨어 설계를 할 수 있을 것으로 기대된다.