• Journal of electromagnetic engineering and science
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• 제6권2호
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• pp.83-91
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• 2006

In this paper, we develop space-time(ST) Rake receivers for Time Division Synchronous Code Division Multiple Access(TD-SCDMA) base stations(BS). The beamforming of BS transforms the uplink MIMO channel space into many sub-sectors' channels to be nearly orthogonal, thus, well established 1-D Rake technology can be used to TD-SCDMA base station to construct ST Rake, which simplified the system's implementation as well as enlarged users' capacity by the beamforming. The construction and capacity of MIMO sub-sectors by multi-beamforming have been presented. The proposed ST Rake algorithm include the multi-beamforming algorithm for MIMO sub-sectors and classical 1-D Rake algorithm. The calculating formulas for interference plus noise ratio(SINR) and bit error rate(BER) have been derived. Simulations verify that the proposed ST Rake receiver for BS is effective, and the BS systems can get higher system capacity and can be of better performance than presented TD-SCDMA systems.

• 대한한의학방제학회지
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• 제23권1호
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• pp.121-131
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• 2015

Objectives : This study was conducted to investigate the membrane potential to apply Doksam-tang to a human heart failure model. Methods : The human heart model was built by Luo et al. CellML model, Priebe et al. CellML model, and a human heart mesh file. Doksam-tang gives channel the half maximal inhibitory concentration(IC ₅₀ ), half maximal effective concentration(EC ₅₀ ) values and compounds concentrations. These data load into the laptop with Ubuntu OS, and build the library with the data. Results : While results of the study with the heart failure model shows abnormal membrane potential from the normal heart model, the study with applying Doksam-tang to heart failure model shows restoring membrane potential that is similar to normal heart model. Conclusions : These results of the testings suggest that a conception of novel technique to investigate the effects of Korean herbal medicine.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.145-152
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• 2003

Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs have been investigated under sub-bandgap photonic excitation ($hv). Drain $(V_{DS})-,{\;}gate($V_{DS})-$, and optical power($P_{opt}$)-dependent variation of the abnormal gate leakage current and associated physical mechanisms in the PHEMTs have been characterized. Peak gate voltage ($V_{GS,P}$) and the onset voltage for the impact ionization ($V_{GS.II}$) have been extracted and empirical model for their dependence on the $V_{DS}$ and $P_{opt} have been proposed. Anomalous gate and drain current, both under dark and under sub-bandgap photonic excitation, have been modeled as a parallel connection of high performance PHEMT with a poor satellite FET as a parasitic channel. Sub-bandgap photonic characterization, as a function of the optical power with $h\nu=0.799eV$, has been comparatively combined with those under dark condition for characterizing the bell-shaped negative humps in the gate current and subthreshold drain leakage under a large drain bias.

• 전자공학회논문지
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• 제50권9호
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• pp.55-59
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• 2013

Sub-$0.1{\mu}m$로 스케일이 감소함에 따라 기생 저항 효과가 크게 발생되는 dc Ids 측정 데이터 없이 측정 S-파라미터로부터 얻어진 RF Ids를 사용하여 벌크 MOSFET의 포화영역에서 게이트 전압 종속 유효 캐리어 속도를 추출하는 새로운 방법이 개발되었다. 이 방법은 바이어스 종속 기생 게이트-소스 캐패시턴스와 유효 채널 길이의 복잡한 추출 없이 포화영역의 유효 캐리어 속도를 추출할 수 있게 한다. 이러한 RF 기술을 사용하여 벌크 포화 속도를 초과하는 전자 속도 overshoot 현상이 $0.065{\mu}m$ 게이트 길이의 벌크 N-MOSFET에서 관찰되었다.

• 대한토목학회논문집
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• 제3권2호
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• pp.97-107
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• 1983

비선형(非線型) 2차원조석(次元潮汐)모델의 경기만남부해역(京畿灣南部海域)에의 적용(適用)이 서술(敍述)되었다. 모델을 이용(利用)하여 만체계(灣體系)의 조류유동현상(潮流流動現像), 해저마찰력(海底摩擦力) 및 에너지소산(消散)에 대(對)한 초기평가(初期評價)를 할 수 있었다. 또한 모델에 의(依)한 수치실험(數値實驗)을 통(通)해 아산만접근수로(牙山灣接近水路)를 준설(浚渫)할 경우(境遇) 주태음반일주조(主太陰半日週潮)($M_2$)의 영향(影響) 및 해면(海面)에 작용(作用)하는 $10dyne/cm^2$의 균일정상풍(均一定常風)에 의(依)한 유동현상(流動現像)의 변화(變化)를 평가(評價)하였다. 초기결과(初期結果)들이 제시(提示)되었으며 토의(討議)되었다.

• 한국재료학회지
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• 제12권4호
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• pp.254-258
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• 2002

To realize channel cross-connecting in optical communications systems, a high speed optical matrix switch was fabricated using z-cut $LiNbO_3$. For switch fabrication was design bending structure and coupling length and four $2{\times}2$ directional couplers were integrated on one substrate far construction of a $4{\times}4$ switch. Single-mode optical waveguides were formed by Ti-diffusion at a wet $O_2$ atmosphere. Ti-diffusion profile, refractive index variation and waveguide morphology were analyzed by Prism coupler and optical microscopy, respectively.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제10권5호
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• pp.2015-2028
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• 2016

In this paper, we propose a sum transmission rate maximization based cooperative spectrum sharing protocol with quality-of-service (QoS) support for both of the primary and secondary systems, which exploits the situation when the primary system experiences a weak channel. The secondary transmitter ST_b which provides the best performance for the primary and secondary systems is selected to forward the primary signal. Specifically, ST_b helps the primary system achieve the target rate by using a fraction of its power to forward the primary signal. As a reward, it can gain spectrum access by using the remaining power to transmit its own signal. We study the secondary user selection and optimal power allocation such that the sum transmission rate of primary and secondary systems is maximized, while the QoS of both primary and secondary systems can be guaranteed. Simulation results demonstrate the efficiency of the proposed spectrum sharing protocol and its benefit to both primary and secondary systems.

• Nuclear Engineering and Technology
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• 제52권11호
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• pp.2479-2490
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• 2020

We performed experiments to measure a single-phase upward flow in a 5 × 5 rod bundle with spacer grids using a particle image velocimetry, focusing on the crossflow. The Reynolds number based on the hydraulic diameter and the bulk velocity is 10,000. The ratio of pitch between rods and rod diameter is 1.4 and spacer grid is installed periodically. The turbulence in the rod bundle results from the combination of a forced mixing and natural mixing. The forced mixing by the spacer grid persists up to 10D_h from the spacer grid, while the natural mixing is attributed to the crossflow between adjacent subchannels. The combined effects contribute to a sinusoidal distribution of the time-averaged stream-wise velocity along the lateral direction, which is relatively weak right behind the spacer grid as well as in the gap. The streamwise and lateral turbulence intensities are stronger right behind the spacer grid and in the gap. Based on these findings, we newly defined a modified mixing coefficient as the ratio of the lateral turbulence intensity to the time-averaged streamwise velocity, which shows a spatial variation. Finally, we compared the developed model with the measured data, which shows a good agreement with each other.

• 한국재료학회지
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• 제17권4호
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• pp.222-226
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• 2007

[ $SiO_2$ ]thin films containing Si-nanocrystals and $Er^{3+}$ were fabricated by the RF-sputtering method. Intense emission of $Er^{3+}$ was observed at 1530 nm region after the annealing of the film at $1050^{circ}C$ for 5 min. Channel waveguides were fabricated using such films for the core. The films containing Si higher than 2.4 at% exhibited the change in stress from compression to tension after annealing, which induced the fatal loss-increase in waveguide. The optical gain might be attained by the Er-doped waveguide with Si lower than 2.4 at% by a visible-light-excitation.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.156-161
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• 2015

In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φ_m. As a consequence, the behavior of the leakage current improves with increased Φ_m. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.