1 |
이성현, ""나노 스케일 벌크 MOSFET을 위한 새로운 RF 엠피리컬 비선형 모델링," 전자공학회 논문지 제 43권 SD편 제 12호, pp. 33-39, 2006.
과학기술학회마을
|
2 |
B. Cheng, V. R. Rao, and J. C. S. Woo, "Exploration of velocity overshoot in a high-performance deep sub-0.1-mm SOI MOSFET with asymmetric channel profile," IEEE Electron Device Lett., vol. 20, pp. 538-540, Oct. 1999.
DOI
ScienceOn
|
3 |
A. Lochtefeld and D. A. Antoniadis, "On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit ?," IEEE Electron Device Lett., vol. 22, no. 2, pp. 95-97, 2001.
DOI
ScienceOn
|
4 |
R. Ohba and T. Mizuno, "Nonstationary electron/hole transport in sub-0.1 MOS devices: correlation with mobility and low-power CMOS application," IEEE Trans. Electron Device, vol. 48, no. 2, pp. 338-343, 2001.
DOI
ScienceOn
|
5 |
S. Lee, "A new method to extract carrier velocity in sub-0.1 MOSFETs using RF measurements," IEEE Trans. Nanotechnology, vol. 5, no. 3, pp. 163-166, 2006.
DOI
ScienceOn
|
6 |
J. Cha, J. Cha, and S. Lee, "Uncertainty analysis of two-step and three-step methods for deembedding on-wafer RF transistor measurements," IEEE Trans. Electron Device, Vol. 55, pp. 2195-2201, 2008.
DOI
ScienceOn
|
7 |
S. Lee, "An accurate RF extraction method for resistances and inductances of sub-0.1 CMOS transistors", Electronics Letters, Vol. 41, No. 24, pp. 1325-1327, 2005.
DOI
ScienceOn
|
8 |
김종혁, 이용택, 최문성, 구자남, 이성현, "Nano-Scale MOSFET의 게이트길이 종속 차단주 파수 추출," 전자공학회 논문지 제 42권 SD편 제12호, pp. 1-8, 2005.
|