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http://dx.doi.org/10.5573/ieek.2013.50.9.055

Accurate RF Extraction Method for Gate Voltage-Dependent Carrier Velocity of Sub-0.1㎛ MOSFETs in the Saturation Region  

Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.50, no.9, 2013 , pp. 55-59 More about this Journal
Abstract
A new method using RF Ids determined from measured S-parameters is proposed to extract the gate-voltage dependent effective carrier velocity of bulk MOSFETs in the saturation region without additional dc Ids measurement data suffering parasitic resistance effect that becomes larger with continuous down-scaling to sub-$0.1{\mu}m$. This method also allows us to extract the carrier velocity in the saturation region without the difficult extraction of bias-dependent parasitic gate-source capacitance and effective channel length. Using the RF technique, the electron velocity overshoot exceeding the bulk saturation velocity is observed in bulk N-MOSFETs with a polysilicon gate length of $0.065{\mu}m$.
Keywords
MOSFET; CMOS; RF; carrier velocity; device modeling; S-parameter; parameter extraction;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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