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http://dx.doi.org/10.3740/MRSK.2007.17.4.222

Fabrication and characterization of SiO2 based waveguide co-doped with Si-nanocrystal and Er3+  

Choi, Se-Weon (Korea Institute of Industrial Technology, Gwangju)
Ko, Young-Ho (Korea Institute of Industrial Technology, Gwangju)
Chang, Se-Hun (Korea Institute of Industrial Technology, Gwangju)
Oh, Ik-Hyun (Korea Institute of Industrial Technology, Gwangju)
Kang, Chang-Seog (Korea Institute of Industrial Technology, Gwangju)
Publication Information
Korean Journal of Materials Research / v.17, no.4, 2007 , pp. 222-226 More about this Journal
Abstract
[ $SiO_2$ ]thin films containing Si-nanocrystals and $Er^{3+}$ were fabricated by the RF-sputtering method. Intense emission of $Er^{3+}$ was observed at 1530 nm region after the annealing of the film at $1050^{circ}C$ for 5 min. Channel waveguides were fabricated using such films for the core. The films containing Si higher than 2.4 at% exhibited the change in stress from compression to tension after annealing, which induced the fatal loss-increase in waveguide. The optical gain might be attained by the Er-doped waveguide with Si lower than 2.4 at% by a visible-light-excitation.
Keywords
Si; nanocrystals; $Er^{3+}$; waveguide; annealing;
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