• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.359-363
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• 2015

This paper proposes an algorithm that reduces the conversion time of a single-slope A/D converter (SSADC) that has n-bit resolution, which typically is limited by conversion time taking up to $2^n$ clock cycles for an operation. To improve this situation, we have researched a novel hybrid-type A/D converter that consists of a pseudo-pipeline A/D converter and a conventional SSADC. The pseudo-pipeline A/D converter, using a single-stage of analog components, determines the most significant bits (MSBs) or upper bits and the conventional SSADC determines the remaining bits. Therefore, the modified SSADC, similar to the hybrid-type A/D converter, is able to significantly reduce the conversion time because the pseudo-pipeline A/D converter, which determines the MSBs (or upper bits), does not rely on a clock. The proposed A/D converter was designed using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) technology process; additionally, its characteristics were simulated.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.64-69
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• 2013

In this paper, a high-speed CMOS Image Sensor (CIS) based on a 10-bit two-step single-slope A/D converter is proposed. The A/D converter is composed of both a 5-bit coarse ADC and a 6-bit fine ADC, and the conversion speed is 10 times faster than that of the single-slope A/D converter. In order to have a small noise characteristics, further, a Digital Correlated Double Sampling(D-CDS) is also discussed. The proposed A/D converter has been fabricated with 0.13um 1-poly 4-metal CIS process, and it has a QVGA($320{\times}240$) resolution. The fabricated chip size is $5mm{\times}3mm$, and the power consumption is about 35mW at 3.3V supply voltage. The measured conversion speed is 10us, and the frame rate is 220 frames/s.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.246-251
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• 2014

In this paper, a high-speed CMOS Image Sensor (CIS) based on a 10-bit two step Single Slope A/D Converter (SS-ADC) is proposed. The A/D converter is composed of both 5-bit coarse ADC and a 6-bit fine ADC, and the conversion speed is 10 times faster than that of the single-slope A/D convertor. In order to reduce the pixel noise, further, a Hybrid Correlated Double Sampling (H-CDS) is also discussed. The proposed A/D converter has been fabricated with 0.13um 1-poly 4-metal CIS process, and it has a QVGA ($320{\times}240$) resolution. The fabricated chip size is $5mm{\times}3mm$, and the power consumption is about 35 mW at 3.3 V supply voltage. The measured conversion speed is 10 us, and the frame rate is 220 frames/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.20-27
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• 2011

A CMOS Image Sensor(CIS) mounted on mobile appliances always needs a low power consumption because of the battery life cycle. In this paper, we propose novel power reduction techniques such as a data flip-flop circuit with leakage current elimination, a low power single slope A/D converter with a novel comparator, and etc. Based on 0.13um CMOS process, the chip satisfies QVGA resolution($320{\times}240$ pixels) whose pitch is 2.25um and whose structure is 4-Tr active pixel sensor. From the experimental results, the ADC in the middle of CIS has a 10-b resolution, the operating speed of CIS is 16 frame/s, and the power dissipation is 25mW at 3.3V(Analog)/1.8V(Digital) power supply. When we compare the proposed CIS with conventional ones, the power consumption is reduced approximately by 22% in sleep mode, 20% in operating mode.

• Journal of Sensor Science and Technology
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• v.24 no.4
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• pp.252-257
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• 2015

This paper proposes a single slope A/D converter (SSADC) that is possible to process the signal of the ultraviolet, visible and infrared rays with a single chip. And the proposed SSADC is a type of single channel ADC. In the conventional SSADC, it is possible to process the only one signal with a kind of the sensor because the speed of the operating frequency and the slope of ramp signal generated by the ramp generator are fixed. In order to improve the disadvantages, a ramp generator which has variable slope in ramp function is designed and $3{\times}1$ MUX(multiplexer) is adopted so that we can change the speed of the operating frequency and the slope of ramp signal. Therefore, the multiple signal processing of the wanted sensors can be possible. The designed circuit is layout by the $0.35-{\mu}m$ CMOS 2-poly 4-metal technology process and is checked through DRC and LVS tools.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.335-337
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• 1993

Offset voltage and drift characteristics of operational amplifier are critical factor to precision AID conversion System. In this study, a method is suggested to design the programmable A/D conversion system which has high resolution and low drift characteristics. First, hardware was designed to reduce the offset voltage of integrator and comparator, and analog switches are connected to reduce the drift characteristics of operational amplifier. And then, a calibration software technique was performed to obtain the stable data from A/D converter. The main advantage of our method is high precision A/D converter can be constructed with low cost and high confidence. Therefore proposed method is expected to be used in the industrial field where a high precision measurement is required.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.104-110
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• 2011

A CMOS Image Sensor (CIS) mounted on mobile appliances requires low power consumption due to limitations of the battery life cycle. In order to reduce the power consumption of CIS, we propose novel power reduction techniques such as a data flip-flop circuit with leakage current elimination and a low power single slope analog-to-digital (A/D) converter with a sleep-mode comparator. Based on 0.13 ${\mu}m$ CMOS process, the chip satisfies QVGA resolution (320 ${\times}$ 240 pixels) that the cell pitch is 2.25 um and the structure is a 4-Tr active pixel sensor. From the experimental results, the performance of the CIS has a 10-b resolution, the operating speed of the CIS is 16 frame/s, and the power dissipation is 25 mW at a 3.3 V(analog)/1.8 V(digital) power supply. When we compare the proposed CIS with conventional ones, the power consumption was reduced by approximately 22% in the sleep mode, and 20% in the active mode.

• Proceedings of the KIEE Conference
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• 1999.11c
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• pp.693-696
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• 1999

This paper describes a new voltage recorder for the voltage management of a power distribution line by using a new voltage measurement technique. The RMS(Root Mean Square) voltage measurement for the power line under the assumption of a sinusoidal input voltage is taken by the full-wave rectifier, half-adder utilizing operational amplifier(OP) circuit. A/D converter utilizing a dual slope converter converts an analog voltage signal into a serial pulse. The pulse is counted with a single chip micro-controller, converted with the RMS voltage, and saved into a flash memory. In the last, a new voltage recorder with compact size and multifunction is developed. Also, Voltage Management System that can analyze the stored data via RS-232C cable is developed based on Windows 95 and Visual C++.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.65-70
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• 2006

An image sensor has limited dynamic range while the human eye has logarithmic response over wide range of light intensity. Although the sensor gain can be set high to identify details in darker area on the image, this results in saturation in brighter area. The gamma correction is essential to fit the human eye response. However, the digital gamma correction degrades image quality especially for darker area on the image due to the limited ADC resolution and the dynamic range. This Paper proposes a CMOS image sensor (CIS) with a nonlinear analog-to-digital converter (AU) which performs analog gamma correction. The CIS with the proposed nonlinear analog-to-digital conversion scheme was fabricated with a $0.35{\mu}m$ CMOS process. The analog gamma correction using the proposed nonlinear ADC CIS provides the 2.2dB peak-signal-to-noise-ratio(PSM) improved image qualify than conventional digital gamma correction. The PSNR of the image obtain from the digital gamma correction is 25.6dB while it is 27.8dB for analog gamma correction. The PSNR improvement over digital gamma correction is about $28.8\%$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.110-119
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• 2017

This paper describes a CMOS image sensor (CIS) with dual correlated double sampling (CDS) and column-parallel analog-to-digital converter (ADC) and its measurement method using a field-programmable gate array (FPGA) integrated module. The CIS is composed of a $320{\times}240$ pixel array with $3.2{\mu}m{\times}3.2{\mu}m$ pixels and column-parallel 10-bit single-slope ADCs. It is fabricated in a $0.11-{\mu}m$ CIS process, and consumes 49.2 mW from 1.5 V and 3.3 V power supplies while operating at 6.25 MHz. The measured dynamic range is 53.72 dB, and the total and column fixed pattern noise in a dark condition are 0.10% and 0.029%. The maximum integral nonlinearity and the differential nonlinearity of the ADC are +1.15 / -1.74 LSB and +0.63 / -0.56 LSB, respectively.