• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.4
• /
• pp.21-27
• /
• 2009

In this work, Er-silicided SB-SOI nMOSFET and Pt-silicided SB-SOI pMOSFET have been fabricated to investigate the current-voltage characteristics of Schottky barrier SOI nMOS and pMOS at elevated temperature. The dominant current transport mechanism of SB nMOS and pMOS is discussed using the measurement results of the temperature dependence of drain current with gate voltages. It is observed that the drain current increases with the increase of operating temperature at low gate voltage due to the increase of thermal emission and tunneling current. But the drain current is decreased at high gate voltage due to the decrease of the drift current. It is observed that the ON/Off current ratio is decreased due to the increased tunneling current from the drain to channel region although the ON current is increased at elevated temperature. The threshold voltage variation with temperature is smaller and the subthreshold swing is larger in SB-SOI nMOS and pMOS than in SOI devices or in bulk MOSFETs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.11a
• /
• pp.123-127
• /
• 1992

When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.3
• /
• pp.233-237
• /
• 2002

A giga-bit DRAM(dynamic random access memory) technology with W/WNx/poly-Si dual gate electrode is presented in 7his papers. We fabricated $0.16\mu\textrm{m}$ CMOS using this technology and succeeded in suppressing short-channel effects. The saturation current of nMOS and surface-channel pMOS(SC-pMOS) with a $0.16\mu\textrm{m}$ gate was observed 330 $\mu\A/\mu\textrm{m}$ and 100 $\mu\A/\mu\textrm{m}$ respectively. The lower salutation current of SC-pMOS is due to the p-doped poly gate depletion. SC-pMOS shows good DIBL(dram-induced harrier lowering) and sub-threshold characteristics, and there was no boron penetration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.2
• /
• pp.126-129
• /
• 2006

We investigated an optimized condition of the capacitor threshold voltage implantation(capacitor $V_T$ Implant) in planar P-MOS DRAM Cell. Several samples with different condition of the capacitor $V_T$ Implant were prepared. It appeared that for the capacitor $V_T$ Implant of $BF_2\;2.0{\times}l0^{13}\;cm^{-2}$ 15 KeV, refresh time is three times larger than that of the sample, in which capacitor $V_T$ Implant is in $BF_2\;1.0{\times}l0^{13}\;cm^{-2}$ 15 KeV. Raphael simulation revealed that the lowed maximum electric field and lowed minimum depletion capacitance ($C_{MIN}$) under the capacitor resulted in well refresh characteristics.

• Asian-Australasian Journal of Animal Sciences
• /
• v.24 no.6
• /
• pp.844-850
• /
• 2011

This study was conducted to compare the effects of dietary supplementation of Sodium Gluconate (SG), Mannan Oligosaccharide (MOS) and Potassium Diformate (PDF) on growth performance and small intestinal morphology in nursery piglets. One hundred forty four female piglets ($11.69{\pm}0.71\;kg$) were divided into 4 treatments with six replicates of six pigs each. The pigs received a control diet or diets supplemented with SG, MOS and PDF at 2,500, 3,000 and 8,000 ppm; respectively, for 6 weeks. Supplementation of SG, MOS or PDF increased final body weight, average daily gain and tended to improve feed to gain ratio (p = 0.02, 0.04 and 0.16; respectively), other than average daily feed intake, intestinal pH and the bacterial populations were not influenced by the dietary treatments. SG significantly decreased the ammonia concentration in the caecum (p<0.05) and supplementation of SG, MOS or PDF tended to increase lactic acid and total short chain fatty acid concentration in the caecum (p = 0.08, 0.09; respectively), in addition SG, MOS or PDF slightly increased butyric acid concentration in the caecum (p = 0.14). SG highly significant increased the villous height in jejunum (p<0.01) and supplementing SG, MOS or PDF significantly increased crypt depth in jejunum (p<0.05), moreover, PDF significantly increased villous height and crypt depth ratio in jejunum (p<0.05) compared with control. The dietary treatments did not influence villous height and crypt depth in duodenum and villous height in jejunum (p>0.05). It can be concluded that supplementing SG, MOS or PDF as a feed additive has the potential to improve the growth performance, the intestinal lactic acid bacteria population, intestinal short-chain fatty acid concentration and the intestinal morphology of pigs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.105-106
• /
• 2005

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

• Asian-Australasian Journal of Animal Sciences
• /
• v.26 no.1
• /
• pp.116-121
• /
• 2013

The effects of oligosaccharide supplementation on the growth performance, flock uniformity and GIT development of broiler chickens were investigated. Four diets, one negative control, one positive control supplemented with zinc-bacitracin, and two test diets supplemented with mannoligosaccharide (MOS) and fructooligosaccharide (FOS), were used for the experiment. Birds given MOS or FOS had improved body weight (BW) and feed efficiency (FCR), compared to those fed the negative control diet during the 35-d trial period. The effect on FCR became less apparent when the birds got older. FOS and MOS supplementation reduced the pancreas weight as a percentage of BW, with an effect similar to that of the antibiotic, at 35 d of age. Birds given MOS tended to have a heavier bursa (p = 0.164) and lower spleen/bursa weight ratio (p = 0.102) at 35 d of age. MOS and Zn-bacitracin showed a clear improvement on flock uniformity, compared to FOS. The mortality rate was not affected by FOS or MOS.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.1
• /
• pp.1-5
• /
• 2005

Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diffusion of the tail and a large amount of dose loss in the extension region. This problem comes from the high-temperature long-time deposition process for forming the spacer and the presence of fluorine which diffuses quickly to the $Si/SiO_{2}$ interface with boron pairing. We have studied the method to improve the pMOS performance that includes the low-energy boron implantation, spike annealing and device structure design using TCAD simulation.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.4 no.2
• /
• pp.297-305
• /
• 2000

It is observed that the initial properties and degradation characteristics on plasma of n/p-MOSFET with polycide and poly-Si as different gate materials under F-N stress and hot electron stress are affected by metal AR(Antenna Ratio) during plasma process. Compared to that of MOS devices with poly-Si gate material, reliability properties on plasma of MOS devices with polycide gate material are improved. This can be explained by that fluorine of tungsten polycide process diffuses through poly-Si into gate oxide and results in additional oxide thickness. The fact that MOS devices with polycide gate material can reduce damages of plasma process shows possibility that polycide gate material can be used as gate material for next generation MOS devices.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2003.11a
• /
• pp.234-238
• /
• 2003

In this work, we have designed a fully integrated 2.4GHz LC-tuned voltage-controlled oscillator (VCO) with multiple tuning inputs for a $0.25-{\mu}m$ standard CMOS Process. The design of voltage-controlled oscillator is based on an LC-resonator with a spiral inductor of octagonal type and pMOS-varactors. Only two metal layer have been used in the designed inductor. The frequency tuning is achieved by using parallel pMOS transistors as varactors and back-gate tuned pMOS transistors in an active region. Coarse tuning is achieved by using 3-bit pMOS-varactors and fine tuning is performed by using back-gate tuned pMOS transistors in the active region. When 3-bit digital and analog inputs are applied to the designed circuits, voltage-controlled oscillator shows the tuning feature of frequency range between 2.3 GHz and 2.64 GHz. At the power supply voltage of 2.5 V, phase noise is -128dBc/Hz at 3MHz offset from the carrier, Total power dissipation is 7.5 mW.