Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Analysis of p-MOSFET Performance Degradation due to BF2 Dose Loss Phenomena

  • Lee, Jun-Ha (Information Display Research Center, Department of Computer System Engineering, Sangmyung University) ;
  • Lee, Hoong-Joo (Information Display Research Center, Department of Computer System Engineering, Sangmyung University)
  • Published : 2005.02.01
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Abstract

Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diffusion of the tail and a large amount of dose loss in the extension region. This problem comes from the high-temperature long-time deposition process for forming the spacer and the presence of fluorine which diffuses quickly to the $Si/SiO_{2}$ interface with boron pairing. We have studied the method to improve the pMOS performance that includes the low-energy boron implantation, spike annealing and device structure design using TCAD simulation.

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References

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