Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.105-106
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- 2005
Subthreshold Characteristics of a 50 nm Impact Ionization MOS Transistor
50 nm Impact Ionization MOS 소자의 Subthreshold 특성
- Yoon, Jee-Young (Korea Univ.) ;
- Ryu, Jang-Woo (Korea Univ.) ;
- Jung, Min-Chul (Korea Univ.) ;
- Sung, Man-Young (Korea Univ.)
- Published : 2005.07.07
Abstract
The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.