Current-Voltage Characteristics of Schottky Barrier SOI nMOS and pMOS at Elevated Temperature |
Ka, Dae-Hyun
(Department of Electronics Engineering, University of Incheon)
Cho, Won-Ju (Department of Electronics Materials Engineering, Kwangwoon University) Yu, Chong-Gun (Department of Electronics Engineering, University of Incheon) Park, Jong-Tae (Department of Electronics Engineering, University of Incheon) |
1 | M. Zhang, J. Knoch, S. Zhang, S. Feste, M. Schroter, and S. Mantl, "Threshold voltage variation in SOl Schottky-bamer MOSFETs," IEEE Trans. on Electron Devices, vol.55, no.3, pp.858-865, 2008 DOI ScienceOn |
2 | L.E. Calvet, RG. Wheeler, and M.A Reed, "Electron transport measurements of Schottky bamer inhomogeneities," Applied Physics Letters, vol.80, no.10, pp.1761-1763, 2002 DOI ScienceOn |
3 | G. Groesenken, J.P. Colinge, HE. Maes, and J.C. Aldennan, and S. Holt, "Temperature dependence of threshold voltage in thin-film SOl MOSFET's," IEEE Electron Device Letters, vol. 11, no.8, pp.329-331, 1990 DOI ScienceOn |
4 | M. Jang, J. Oh, S. Maeng, and W. Cho, "Characteristics of Erbium-silicided n-type Schottky bamer tunnel transistors," Applied Physics letter, vol.83, no.13, pp.2611-2613, 2003 DOI ScienceOn |
5 | J. Knoch, M. Zhang, S. Nantl, and J. Appenzeller, "On the perfonnance of single-gated ultratin-body SOl Schottky-bamer MOSFETs," IEEE Trans. on Electron Devices, vol.53, no.7, pp.1669-1674, 2006 DOI ScienceOn |
6 | Rinus T.P. Lee, A.E. Lim, K. Tan, T. Liow, G. Lo, G. Samudra, D. Chi, and Y. Yeo, 'N-channel FinFETs with 25-nm gate length and Schottky-bamer source and drain featuring Ytterbium silicide,' IEEE Electron Device Letters, vol.28, no.2, pp.164-167, 2007 DOI ScienceOn |
7 | B.T. Tsui, and C.P. Lu, "Current transport mechanism of Schottky-bamer and modified Schottky-bamer MOSFETs," Proc. of ESSDERC, pp.307-310, 2007 |
8 | S. Xiong, T. King, and l Bokor, "A comparison of symmetric ultrathin-body double-gate devices with metal source/drain and doped source/drain," IEEE Trans. on Electron Devices, vol.52, no.8, pp.1859-1867, 2005 DOI ScienceOn |
9 | lM. Larson, and lP. Snyder, "Overview and status of metal SID Schottky-bamer MOSFET technology," IEEE Trans. on Electron Devices, vol.53, no.5, pp.1048-1058, 2006 DOI ScienceOn |
10 | J. Knoch, M. Zhang, J. Appenzeller, and S. Nantl, "Physics of ultrathin-body silicon-on-insulator Schottky-bamer field-effect transistors," Applied Physics, A87, pp.351-357, 2007 |
11 | G. Lameu, and E. Dubois, "Schottky-bamer source/drain MOSFETs on ultrathin SOl body with a tungsten metallic midgap gate," IEEE Electron Device Letters, vol.25, no.12, pp.908-803, 2004 |
12 | C.J. Koeneke, and W.T. Ynch, "Lightly doped Schottky MOSFET," Tech. Dig. of IEDM, pp.466-469, 1982 |
13 | G. Tsutsui, M. Saitoh, T. Hiramoto, "Impact of SOl thickness fluctuation on threshold voltage variation in ultra-thin body SOl MOSFETs," IEEE Trans. on Nanotech., vol.4, no.3, pp.369-373, 2005 DOI ScienceOn |
14 | D. Connelly, C. Fraulkner, D.E. Grupp, and J.S. Harris, "A new route zero bamer metal source/drain MOSFETs," IEEE Trans. on Nanotech., vol.3, no.3, pp.98-104, 2004 DOI ScienceOn |
15 | A Xia, H Ru, Z. Xing, W. Yangyuan, "Scaling of lowered source/drain(LSD) and raised source/drain(RSD) ultra-thin body(UTB) SOl MOSFETs," Solid-State Electron, vol.49, pp. 479-483, 2005 DOI ScienceOn |