• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.1150-1153
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• 1992

A new soft-switching resonant type inverter is proposed to obtain the low voltage stress. In this proposed inverter, only one additional switch is used for the soft commutation. Therefore, a simple structure and a easy control can be available. Moreover, the PWM capability can be highly improved due to tile convenient choice of switching condition. Based on the operational principle, analysis and design procedures are described. Through the simulation, the operation of the proposed invertor is verified.

• Journal of Power Electronics
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• 제18권5호
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• pp.1303-1314
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• 2018

To match the dynamic lower voltage of a fuel cell stack and the required constant higher voltage (400V) of a DC bus, an H-type structural Boost three-level DC-DC converter with a wide voltage-gain range (HS-BTL) is presented in this paper. When compared with the traditional flying-capacitor Boost three-level DC-DC converter, the proposed converter can obtain a higher voltage-gain and does not require a complicate control for the flying-capacitor voltage balance. Moreover, the proposed converter, which can draw a continuous and low-rippled current from an input source, has the advantages of a wide voltage-gain range and low voltage stress for power semiconductors. The operating principle, parameters design and a comparison with other converters are presented and analyzed. Experimental results are also given to verify the aforementioned characteristics and theoretical analysis. The proposed converter is suitable for application of fuel cell systems.

• 전자공학회논문지A
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• 제30A권12호
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.461-464
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• 1999

This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4$\AA$ to 814$\AA$ with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ . The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.535-537
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• 2008

This paper proposes a modularized two-stage charge equalization converter for a series-connected lithium-ion battery string. In this paper, the series-connected battery sting is modularized into M modules, and each module has K cells in series. With this modularization, low voltage stress on the electronic devices can be achieved. A two-stage dc-dc converter with cell selection switches is employed. The first stage dc-dc converter steps down the high bus voltage to about 10 V. The second stage dc-dc converter integrated with selection switches equalizes the cell voltages. A prototype for 88 lithium-ion battery cells is optimally designed and implemented. Experimental results verify that the proposed equalization method has good cell balancing performance showing low voltage stress, small size, and low cost.

• Journal of Power Electronics
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• 제15권2호
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• pp.389-398
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• 2015

This paper presents a 1.92 kW resonant converter for medium voltage applications that uses low voltage stress MOSFETs (500V) to achieve zero voltage switching (ZVS) turn-on. In the proposed converter, four MOSFETs are connected in series to limit the voltage stress of the power switches at half of the input voltage. In addition, three resonant circuits are adopted to share the load current and to reduce the current stress of the passive components. Furthermore, the transformer primary and secondary windings are connected in series to balance the output diode currents for medium power applications. Split capacitors are adopted in each resonant circuit to reduce the current stress of the resonant capacitors. Two balance capacitors are also used to automatically balance the input capacitor voltage in every switching cycle. Based on the circuit characteristics of the resonant converter, the MOSFETs are turned on under ZVS. If the switching frequency is less than the series resonant frequency, the rectifier diodes can be turned off under zero current switching (ZCS). Experimental results from a prototype with a 750-800 V input and a 48V/40A output are provided to verify the theoretical analysis and the effectiveness of the proposed converter.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.317-322
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• 2003

A novel three-level DC/DC converter (TLC)for high power applications operating from high input voltage Is proposed. Its switch voltage stress can be ensured to be only one-half of the Input voltage. Nevertheless, since all input voltage is applied to the transformer primary side, it has good turns ratio. The driving method of each module is same as those of the conventional phase-shifted ZVS full bridge PWM converter (PSFB) and the zero-voltage-switching (ZVS) of the leading leg are achieved exactly in the same manner as that of the PSFB. Moreover, its three-level operation can considerably reduce the current ripple through the output inductor and it has no problems of the DC-link voltage unbalance. Therefore, it features a low voltage stress, high efficiency, low EMI, high power density, and small sized filter. To confirm the operation, validity, and features of the proposed circuit, experimental results from a 200W, 600V/DC-48V/DC prototype are presented.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 전력전자학술대회 논문집(1)
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• pp.341-345
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• 2004

A high efficiency and low device stress voltage and current clamping BVS PWM asymmetrical half bridge converter is proposed in this paper. To achieve the ZVS of power switches along the wide load range, the transformer leakage inductor $L_{Ikg}$ is increased. Then, to solve the problem related to ringing in the secondary rectifier caused by the resonance between $L_{Ikg}$ and rectifier junction capacitors, the proposed converter employs a voltage and current clamping cell, which helps voltages and currents of rectifier diodes to be clamped at the output voltage and output current, respectively. Therefore, no RC-snubber for rectifier diodes is needed and a high efficiency as well as low noise output voltage can be realized. In addition, since all energy stored in $L_{Ikg}$ is transferred to the output side, the circulating energy problem can be effectively solved and duty loss does net exist. The operational principle, theoretical analysis, and design considerations are presented. To confirm the operation, validity, and features of the proposed circuit, experimental results from a 425W, 385-170Vdc prototype are presented.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.225-230
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• 2013

This paper presents a novel shunt radio frequency microelectromechanical system switch on a quartz substrate with stiff ribs around the membrane. The buckling effects in the switch membrane and stiction problem are the primary concerns with RF MEMS switches. These effects can be reduced by the proposed design approach due to the stiffness of the ribs around the membrane. A lower mass of the beam and a reduction in the squeeze film damping is achieved due to the slots and holes in the membrane, which further aid in attaining high switching speeds. The proposed switch is optimized to operate in the k-band, which results in a high isolation of -40 dB and low insertion loss of -0.047 dB at 21 GHz, with a low actuation voltage of only 14.6 V needed for the operation the switch. The membrane does not bend with this membrane design approach. Finite element modeling is used to analyze the stress and pull-in voltage.

• Journal of Electrical Engineering and Technology
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• 제12권1호
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• pp.189-197
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• 2017

This paper elaborates two novel proposed topologies (type-I and type-II) of the high step-up DC-DC converter using switched inductor and voltage multiplier cell. The advantages of these proposed topologies are the less voltage stress on semiconductor devices, low device count, high power conversion efficiency, high switch utilization factor and high diode utilization factor. We analyze the Type-II topologies operating principle and mathematical analysis in detail in continuous conduction mode. High-intensity discharge lamp for the automotive application can use the derived topologies. The proposed converters give better performance when compared to the existing types. Also, it is found that the proposed type-II converter has relatively higher voltage gain compared to the type-I converter. A 40 W, 12 V input voltage and 72 V output voltage has developed for the type-II converter and the performances are validated.