• Transactions on Electrical and Electronic Materials
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• 제10권6호
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• pp.185-188
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• 2009

The effects of the growth temperature on the properties of ZnO thin films were investigated by using X-ray diffraction, scanning electron microscopy, ultraviolet-visible spectrophotometry, and Hall measurements. The ZnO films were deposited by rf magnetron sputtering at various growth temperatures in the range of 100-$400{^{\circ}C}$. A strong c-axis preferred orientation is observed for all of the samples. As the growth temperature increases, the crystalline orientation of the ZnO (002) plane is not changed, but the full width at half maximum gets smaller. The dependence of the electron concentration, mobility, and resistivity on the growth temperature exhibits that the ZnO films have a higher electron concentration at higher temperatures, thus giving them a low resistivity. The optical transmittance and band gap energy, calculated from the spectra of optical absorbance, show a significant dependence on the growth temperature. As for the sample grown at $100{^{\circ}C}$, the average transmittance is about 90% in the visible wavelength range and the band gap is estimated to be 3.13 eV.

• Nuclear Engineering and Technology
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• 제54권3호
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• pp.1062-1070
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• 2022

In the present communication, pure and stable α-Bismuth Oxide (Bi₂O₃) nanoparticles (NPs) were synthesized by low temperature solution combustion method using urea as a fuel and calcined at 500℃. The synthesized sample was characterized by using powder X-ray Diffraction (PXRD), Scanning Electron Microscopy (SEM), Energy dispersive X-ray analysis (EDAX), Transmission Electron Microscopy (TEM), Fourier Transform Infrared Spectroscopy (FTIR) and UV-Visible absorption spectroscopy. The PXRD pattern confirms the formation of mono-clinic, stable and low temperature phase α-Bi₂O₃. The direct optical energy band gap was estimated by using Wood and Tauc's relation which was found to be 2.81 eV. The characterized sample was studied for X-ray/gamma ray shielding properties in the energy range 0.081-1.332 MeV using NaI (Tl) detector and multi channel analyzer (MCA). The measured shielding parameters agrees well with the theory, whereas, slight deviation up to 20% is observed below 356 keV. This deviation is mainly due to the influence of atomic size of the target medium. Furthermore an accurate theory is necessary to explain the interaction of X-ray/gamma ray with the NPs.The present work opens new window to use this facile, economical, efficient, low temperature method to synthesize nanomaterials for X-ray/gamma ray shielding purpose.

• 한국재료학회지
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• 제24권10호
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• pp.520-525
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• 2014

Effects of Cu and B on effective grain size and low-temperature toughness of thermo-mechanically processed high-strength bainitic steels were investigated in this study. The microstructure of the steel specimens was analyzed using optical, scanning, and transmission electron microscopy; their effective grain size was also characterized by electron back-scattered diffraction. To evaluate the strength and low-temperature toughness, tensile and Charpy impact tests were carried out. The specimens were composed of various low-temperature transformation products such as granular bainite (GB), degenerated upper bainite (DUB), lower bainite (LB), and lath marteniste (LM), dependent on the addition of Cu and B. The addition of Cu slightly increased the yield and tensile strength, but substantially deteriorated the low-temperature toughness because of the higher volume fraction of DUB with a large effective grain size. The specimen containing both Cu and B had the highest strength, but showed worse low-temperature toughness of higher ductile-brittle transition temperature (DBTT) and lower absorbed energy because it mostly consisted of LB and LM. In the B-added specimen, on the other hand, it was possible to obtain the best combination of high strength and good low-temperature toughness by decreasing the overall effective grain size via the appropriate formation of different low-temperature transformation products containing GB, DUB, and LB/LM.

• 대한금속재료학회지
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• 제46권11호
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.533-538
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• 2001

The barrier height is found to increase from 0.25 to 0.690 eV for Schottky contacts on n-InGaAs using deposition of Ag on a substrate cooled to 77K(LT). Surface analysis leads to an interface model for the LT diode in which there are oxide compounds of In:O and As:O between the metal and semiconductor, leading to behavior as a metal-insulator-semiconductor diode. The metal film deposited t LT has a finer and more uniform structure, as revealed by scanning electron microscopy and in situ metal layer resistance measurement. This increased uniformity is an additional reason for the barrier height improvement. In contrast, the diodes formed at room temperature exhibit poorer performance due to an unpassivated surface and non-uniform metal coverage on a microscopic level.

• 폴리머
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• 제38권4호
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• pp.484-490
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• 2014

Reduced graphene oxide (RGO) was fabricated using gelatin as a reductant, and it could be stably dispersed in gelatin solution without aggregation. A series of RGO/gelatin composite films with various RGO contents were prepared by a solution-casting method. The structure and thermal properties of the RGO/gelatin composite films were characterized by UV-vis spectroscopy, Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), differential scanning calorimeter (DSC) and thermal gravimetric analysis (TGA). The addition of RGO enhances the degree of crosslinking of gelatin films and decreases the swelling ability of the gelatin films in water, indicating that RGO/gelatin composite films have a better wet stability than gelatin films. The glass transition temperature ($T_g$) of gelatin films is also increased with the incorporation of RGO. The presence of RGO slightly increases the degradation temperature of gelatin films due to the very low content of RGO in the composite films. Since gelatin is a natural and nontoxic biomacromolecule, the RGO/gelatin composite films are expected to have potential applications in the biomedical field.

• 한국염색가공학회지
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• 제24권1호
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• pp.62-68
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• 2012

Cellulose was electrospun over water collector and the cellulose solution was prepared using N-methyl-morpholine N-oxide/water(nNMMO/$H_2O$). The morphology of electrospun cellulose was investigated by scanning electron microscopy (SEM). SEM images showed that the fiber formation depended on processing parameters such as solution concentration, applied electric field strength, solution feeding rate and temperature of water in coagulation bath. High concentration, low temperature of water bath, and low feeding rate were more favorable to obtain fiber morphology. All the variables affected on the fluidity of the cellulose solution and diffusion of NMMO. Low fluidity and fast diffuision of NMMO was critical for obtaining fiber morphology.

• Steel and Composite Structures
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• 제33권6호
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• pp.777-792
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• 2019

This paper presents a new efficient approach to estimate the S-N type fatigue life assessment curve for S550 high strength steels under low-cycle actions at -60℃. The proposed approach combines a single set of monotonic tension test and one set of fatigue tests to determine the key material damage parameters in the continuum damage mechanics framework. The experimental program in this study examines both the material response under low-cycle actions. The microstructural mechanisms revealed by the Scanning Electron Microscopy (SEM) at the low temperature, furthermore, characterizes the effect due to different strain ratios and low temperature on the low-cycle fatigue life of S550 steels. Anchored on the experimental results, this study validates the S-N curve determined from the proposed approach. The S-N type curve determined from one set of fatigue tests and one set of monotonic tension tests estimates the fatigue life of all specimens under different strain ratios satisfactorily.

• 대한금속재료학회지
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• 제48권7호
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• pp.660-666
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• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• 한국표면공학회지
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• 제48권6호
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• pp.309-314
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• 2015

Multiwall carbon nanotubes are synthesized by using VLS mechanism for the application to $H_2$ gas sensor. MWCNT is not suitable for hydrogen gas sensor due to its low response to the gas. To enhance the gas sensing performance, multiwall carbon nanotubes are coated with $TiO_2$ nanoparticles. Scanning electron microscopy and Transmission electron microscopy showed that the synthesized MWCNT were well dispersed with the diameter and wall thickness of approximately 10-30nm and 5nm, respectively. The MWCNT sensor showed the sensitivities of 1.33-9.5% for the $H_2$ concentration of 100-5000ppm at room temperature. These sensitivities are significantly improved to 6.64-46.65% by coating $TiO_2$ nanoparticles to the MWCNT sensor. The mechanisms of $H_2$ gas sensing improvement of the MWCNT sensor coated with $TiO_2$ nanoparticles are discussed.