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An approach to minimize reactivity penalty of Gd2O3 burnable absorber at the early stage of fuel burnup in Pressurized Water Reactor

  • Nabila, Umme Mahbuba;Sahadath, Md. Hossain;Hossain, Md. Towhid;Reza, Farshid
    • Nuclear Engineering and Technology
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    • v.54 no.9
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    • pp.3516-3525
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    • 2022
  • The high capture cross-section (𝜎c) of Gadolinium (Gd-155 and Gd-157) causes reactivity penalty and swing at the initial stage of fuel burnup in Pressurized Water Reactor (PWR). The present study is concerned with the feasibility of the combination of mixed burnable poison with both low and high 𝜎c as an approach to minimize these effects. Two considered reference designs are fuel assemblies with 24 IBA rods of Gd2O3 and Er2O3 respectively. Models comprise nuclear fuel with a homogeneous mixture of Er2O3, AmO2, SmO2, and HfO2 with Gd2O3 as well as the coating of PaO2 and ZrB2 on the Gd2O3 pellet's outer surface. The infinite multiplication factor was determined and reactivity was calculated considering 3% neutron leakage rate. All models except Er2O3 and SmO2 showed expected results namely higher values of these parameters than the reference design of Gd2O3 at the early burnup period. The highest value was found for the model of PaO2 and Gd2O3 followed by ZrB2 and HfO2. The cycle burnup, discharge burnup, and cycle length for three batch refueling were calculated using Linear Reactivity Model (LRM). The pin power distribution, energy-dependent neutron flux and Fuel Temperature Coefficient (FTC) were also studied. An optimization of model 1 was carried out to investigate effects of different isotopic compositions of Gd2O3 and absorber coating thickness.

Biohydrogen Generation and Purification Technologies for Carbon Net Zero (탄소중립형 바이오수소 생산 및 분리막기반 정제 기술 소개)

  • Hyo Won Kim
    • Membrane Journal
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    • v.33 no.4
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    • pp.168-180
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    • 2023
  • H2 generation from renewable sources is crucial for ensuring sustainable production of energy. One approach to achieve this goal is biohydrogen production by utilizing renewable resources such as biomass and microorganisms. In contrast to commercial methods, biohydrogen production needs ambient temperature and pressure, thereby requiring less energy and cost. Biohydrogen production can reduce greenhouse gas emissions, particularly the emission of carbon dioxide (CO2). However, it is also associated with significant challenges, including low hydrogen yields, hydrodynamic issues in bioreactors, and the need for H2 separation and purification methods to obtain high-purity H2. Various technologies have been developed for hydrogen separation and purification, including cryogenic distillation, pressure-swing adsorption, absorption, and membrane technology. This review addresses important experimental developments in dense polymeric membranes for biohydrogen purification.

The design of the high efficiency DC-DC Converter with Dynamic Threshold MOS switch (Dynamic Threshold MOS 스위치를 사용한 고효율 DC-DC Converter 설계)

  • Ha, Ka-San;Koo, Yong-Seo;Son, Jung-Man;Kwon, Jong-Ki;Jung, Jun-Mo
    • Journal of IKEEE
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    • v.12 no.3
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    • pp.176-183
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    • 2008
  • The high efficiency power management IC(PMIC) with DTMOS(Dynamic Threshold voltage MOSFET) switching device is proposed in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuits consist of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit as a block. The Saw-tooth generator is made to have 1.2 MHz oscillation frequency and full range of output swing from ground to supply voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on Voltage-mode PWM control circuits and low on-resistance switching device, achieved the high efficiency near 95% at 100mA output current. And DC-DC converter is designed with LDO in stand-by mode which fewer than 1mA for high efficiency.

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Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs

  • Kim, Do-Kywn;Sindhuri, V.;Kim, Dong-Seok;Jo, Young-Woo;Kang, Hee-Sung;Jang, Young-In;Kang, In Man;Bae, Youngho;Hahm, Sung-Ho;Lee, Jung-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.601-608
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    • 2014
  • In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

A Re-configurable 0.8V 10b 60MS/s 19.2mW 0.13um CMOS ADC Operating down to 0.5V (0.5V까지 재구성 가능한 0.8V 10비트 60MS/s 19.2mW 0.13um CMOS A/D 변환기)

  • Lee, Se-Won;Yoo, Si-Wook;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.3
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    • pp.60-68
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    • 2008
  • This work describes a re-configurable 10MS/s to 100MS/s, low-power 10b two-step pipeline ADC operating at a power supply from 0.5V to 1.2V. MOS transistors with a low-threshold voltage are employed partially in the input sampling switches and differential pair of the SHA and MDAC for a proper signal swing margin at a 0.5V supply. The integrated adjustable current reference optimizes the static and dynamic performance of amplifiers at 10b accuracy with a wide range of supply voltages. A signal-isolated layout improves the capacitor mismatch of the MDAC while a switched-bias power-reduction technique reduces the power dissipation of comparators in the flash ADCs. The prototype ADC in a 0.13um CMOS process demonstrates the measured DNL and INL within 0.35LSB and 0.49LSB. The ADC with an active die area of $0.98mm^2$ shows a maximum SNDR and SFDR of 56.0dB and 69.6dB, respectively, and a power consumption of 19.2mW at a nominal condition of 0.8V and 60MS/s.

A 10b 50MS/s Low-Power Skinny-Type 0.13um CMOS ADC for CIS Applications (CIS 응용을 위해 제한된 폭을 가지는 10비트 50MS/s 저 전력 0.13um CMOS ADC)

  • Song, Jung-Eun;Hwang, Dong-Hyun;Hwang, Won-Seok;Kim, Kwang-Soo;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.5
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    • pp.25-33
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    • 2011
  • This work proposes a skinny-type 10b 50MS/s 0.13um CMOS three-step pipeline ADC for CIS applications. Analog circuits for CIS applications commonly employ a high supply voltage to acquire a sufficiently acceptable dynamic range, while digital circuits use a low supply voltage to minimize power consumption. The proposed ADC converts analog signals in a wide-swing range to low voltage-based digital data using both of the two supply voltages. An op-amp sharing technique employed in residue amplifiers properly controls currents depending on the amplification mode of each pipeline stage, optimizes the performance of op-amps, and improves the power efficiency. In three FLASH ADCs, the number of input stages are reduced in half by the interpolation technique while each comparator consists of only a latch with low kick-back noise based on pull-down switches to separate the input nodes and output nodes. Reference circuits achieve a required settling time only with on-chip low-power drivers and digital correction logic has two kinds of level shifter depending on signal-voltage levels to be processed. The prototype ADC in a 0.13um CMOS to support 0.35um thick-gate-oxide transistors demonstrates the measured DNL and INL within 0.42LSB and 1.19LSB, respectively. The ADC shows a maximum SNDR of 55.4dB and a maximum SFDR of 68.7dB at 50MS/s, respectively. The ADC with an active die area of 0.53$mm^2$ consumes 15.6mW at 50MS/s with an analog voltage of 2.0V and two digital voltages of 2.8V ($=D_H$) and 1.2V ($=D_L$).

A Kinematical Analysis of Belle Motion on Parallel Bars (평행봉 Belle 기술동작의 운동학적 분석)

  • Kong, Tae-Ung
    • Korean Journal of Applied Biomechanics
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    • v.15 no.4
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    • pp.43-53
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    • 2005
  • This study is to define how the difference of athletic change influence on the last regrasp after somersault in Belle movement of parallel bars. For his study, the following conclusion was produced by analysis of athletic change by means of three dimensional visual image in three athlete of nation. 1. As the picture of S1, there are total used time(2.01 sec), S3(2.17 sec) and S2(2.19 sec). In case of a short needed time, it is difficult for them to perform the remaining movement of the vertical elevating flight easily and comfortably, it is judged as performing the small movement with restrict swing. 2 In the change of body center sped by each event, it is calculated as $-89.1^{\circ}$ the narrowest in S1, $-81.96^{\circ}$ the widest and then $86.34^{\circ}$ in S3. In E3 event, average compound speed is 4.07m/s, S2 showed the fastest speed of 4.14m/s whereas S1 the narrowest angle of 3.95m/s. 3. A shoulder joint and coxa are the period of mention in E3. In E4 which was pointed out the longest vertical distance, S2 that is indicated the highest vertical height as the period of detach in parallel bars. showed -3.91m. This is regarded as a preparatory movement for dynamic performance after using effectively elastic movement of shoulder joint and coxa while easily going up with turning back movement. In the 5th phrase, long airborne time and vertical change position is showed as the start while regrasping securely air flight movement from high position. 4. In E5, a long flight time and a long vertical displacement were shown as the regrasp after somersault efficiently in high position with stability from the point of the highest peak of the center of the body. Especially, S2 is marked as a little bit long position, while S1 is reversely indicated as performing somersault and unstable motion in a low position. 5. In E3, at the point of the largest extension of the shoulder joint and hip joint the shoulder joint is largely marked in $182^{\circ}$ and the hip point $182^{\circ}$ in S2. The shoulder joint is marked at the smallest angle in $177^{\circ}$ and the hip point $176^{\circ}$ in S1. And S1 is being judged by its performance of the less self - confident motion with lessening a breath of swing. S2 makes the most use of flexion and extension of the shoulder joint and the hip joint effectively. It was performed greatly with swinging and dropping the rotary movement and the rotary inertia naturally. 6. In E6, as the point of regrasp of the upper arm in parallel bars it is recognized by the that of components of vertical and horizontal velocity stably. During this study, the insufficient thing and the study on the parallel bars at a real game later are more activated than now. If it is really used as the basic materials by means of Belle Picked Study of Super E level after Bell movement, you may perceive the technique movement previously and perform without difficulty. Especially, such technique as crucifix is quite advantageous for oriental people thanks to small body shape condition. In conclusion we will nicely prepare for our suitable environment to gradually lessen trials and errors by analyzing and studying kinematically this movement.

Carbon Dioxide-based Plastic Pyrolysis for Hydrogen Production Process: Sustainable Recycling of Waste Fishing Nets (이산화탄소 기반 플라스틱 열분해 수소 생산 공정: 지속가능한 폐어망 재활용)

  • Yurim Kim;Seulgi Lee;Sungyup Jung;Jaewon Lee;Hyungtae Cho
    • Korean Chemical Engineering Research
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    • v.62 no.1
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    • pp.36-43
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    • 2024
  • Fishing net waste (FNW) constitutes over half of all marine plastic waste and is a major contributor to the degradation of marine ecosystems. While current treatment options for FNW include incineration, landfilling, and mechanical recycling, these methods often result in low-value products and pollutant emissions. Importantly, FNWs, comprised of plastic polymers, can be converted into valuable resources like syngas and pyrolysis oil through pyrolysis. Thus, this study presents a process for generating high-purity hydrogen (H2) by catalytically pyrolyzing FNW in a CO2 environment. The proposed process comprises of three stages: First, the pretreated FNW undergoes Ni/SiO2 catalytic pyrolysis under CO2 conditions to produce syngas and pyrolysis oil. Second, the produced pyrolysis oil is incinerated and repurposed as an energy source for the pyrolysis reaction. Lastly, the syngas is transformed into high-purity H2 via the Water-Gas-Shift (WGS) reaction and Pressure Swing Adsorption (PSA). This study compares the results of the proposed process with those of traditional pyrolysis conducted under N2 conditions. Simulation results show that pyrolyzing 500 kg/h of FNW produced 2.933 kmol/h of high-purity H2 under N2 conditions and 3.605 kmol/h of high-purity H2 under CO2 conditions. Furthermore, pyrolysis under CO2 conditions improved CO production, increasing H2 output. Additionally, the CO2 emissions were reduced by 89.8% compared to N2 conditions due to the capture and utilization of CO2 released during the process. Therefore, the proposed process under CO2 conditions can efficiently recycle FNW and generate eco-friendly hydrogen product.

Fabrication of Polycrystalline Si Films by Silicide-Enhanced Rapid Thermal Annealing and Their Application to Thin Film Transistors (Silicide-Enhanced Rapid Thermal Annealing을 이용한 다결정 Si 박막의 제조 및 다결정 Si 박막 트랜지스터에의 응용)

  • Kim, Jone Soo;Moon, Sun Hong;Yang, Yong Ho;Kang, Sung Mo;Ahn, Byung Tae
    • Korean Journal of Materials Research
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    • v.24 no.9
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    • pp.443-450
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    • 2014
  • Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

Is Male Professional Golfers' 10.94 m Putting Motion a Pendulum Motion? From a Point of View of the Location of the Center of Putter Head Rotation (퍼터헤드 회전중심점 위치 관점에서 본 남자프로골퍼의 10.94 m 퍼팅동작의 진자운동 여부)

  • Park, Young-Hoon;Youm, Chang-Hong;Seo, Kuk-Woong
    • Korean Journal of Applied Biomechanics
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    • v.17 no.2
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    • pp.217-226
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    • 2007
  • Putting score counts about 43 % of the golf score. The dominant idea of the putting motion to amateur golfers as well as to many professional golfers is a pendulum-like motion. If a golfer's putting stroke motion is a pendulum-like motion, the putting motion should be straight-back-and-through, the same backswing, downswing, and follow through length and period, and a swing with a fixed hinge joint. If the putting motions of the human are different from the pendulum motion, there could be confusion in understanding and teaching golf putting. The purpose of this study was to examine the center of rotation(COR) of the putter head to reveal whether professional golfers really putt like a pendulum. Thirteen male professional golfers were recruited for the study. Each golfers executed 10.94 m putts six times on an artificial grass mat. Putter head position data were collected through a 60 Hz three-dimensional motion analysis system and low pass filtered with cut-off frequency of 6 Hz. COR of the putter head was mathematically acquired. Each golfer's last five putting motions were considered. The results show that the COR of the putter head was neither fixed nor located inside of the golfer. The medio-lateral directional component of the COR of the putter head fluctuated in the range of 10 cm during downswing and follow through. The anterior-posterior directional component of the COR of the putter head was fixed from the beginning of the downswing through impact. Just after impact, however, it moved to the target up to 60 cm. The superior-inferior directional component of COR of the putter head moved in a superior direction with the beginning of the downswing and showed peak height just prior to impact. During the follow through, it moved back in an inferior direction. The height-normalized peak value of the COR of the putter head was $1.4{\pm}0.3$ height. Technically speaking, male professional golfers' 10.94 m putting motion is not a pendulum-like motion. The dominating idea of a pendulum-like motion in putting might come from the image of the flawless, smooth motion of a pendulum.