Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs |
Kim, Do-Kywn
(School of Electronics Engineering, College of IT Engineering, Kyungpook National University)
Sindhuri, V. (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) Kim, Dong-Seok (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) Jo, Young-Woo (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) Kang, Hee-Sung (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) Jang, Young-In (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) Kang, In Man (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) Bae, Youngho (Department of Electronic Engineering, Uiduk University) Hahm, Sung-Ho (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) Lee, Jung-Hee (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) |
1 | D Gregusova, R Stoklas, K C icco, T Lalinsky and P Kordos, "AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with 4 nm thick gate oxide", Semiconductor Science and Technology, Vol.22, pp.947-951, Jun. 2007. DOI |
2 | T. Hashizume, S. Ootomo, and H. Hasegawa, " Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin dielectric", Appl. Phys. Lett, Vol.83, No.14, pp. 2952-1-2952-4, Oct. 2003. DOI ScienceOn |
3 | H-S Kang, M.S.P Reddy, D-S Kim, K-W Kim, J-B Ha, Y S Lee, H-C Choi and J-H Lee, "Effect of oxygen species on the positive flat-band voltage shift in /GaN metal-insulator-semiconductor capacitors with post-deposition annealing ", Appl. Phys. Lett, Vol.46, No.14, pp. 155101-1-155101-4, Feb.2013. |
4 | K.SHIOJIMA and N.SHIGEKAWA, "Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures", JJAP Lett., Vol.43, No.1, pp.100-105, Jan.2004. |
5 | H. Hasegawa and M. Akazawa, "Current Transport, Fermi Level Pinning, and Transient Behavior of Group-III Nitride Schottky Barriers", Journal of the Korean Physical Society, Vol. 55, No.3, pp. 1167-1179, Sept.2009. 과학기술학회마을 DOI |
6 | K.SHIOJIMA and N.SHIGEKAWA, "Thermal Stability of Sheet Resistance in AlGaN/GaN 2DEG Structure", phys. stat. sol Lett, Vol.0, No.1, pp.397-400, Oct.2002. |
7 | Y.H. Chen, K. Zhang, M.Y.Cao, S.L. Zhao, J.C. Zhang, X. H. Ma, and Y. Hao, "Study of surface leakage current of AlGaN/GaN high electron mobility transistors", Appl. Phys. Lett, Vol.104, pp.153509-1-153509-4, April.2014. DOI |
8 | W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, I. Omura, and T. Ogura, "Influence of Surface Defect Charge at AlGaN-GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage", IEEE Transactions On Electron Devices, Vol.52, No.2, pp.159-164, Feb.2005. DOI |
9 | S. Jakschik, U. Schroeder, T. Hechta, M. Gutsche, H. Seidl, Johann W. Barth, "Crystallization behavior of thin ALD- films", Thin Solid Films Letters, Vol.425, pp. 216-220, Dec. 2003. DOI |
10 | J. Hu, A. Nainani, Y. Sun, K.C. Saraswat, and H.S. Philip Wong, "Impact of fixed charge on metalinsulator-semiconductor barrier height reduction", Appl. Phys. Lett, Vol.99, pp. 252104-1-252104-4, Dec.2011. DOI |
11 | N.V. Nguyen, O. A. Kirillov, W. Jiang, W. Wang, J.S. Suehle, P. D. Ye, Y. Xuan, N. Goel, K.W. Choi, W. Tsai, and S. Sayan, "Band offsets of atomiclayer-deposited on GaAs and the effects of surface treatment", Appl. Phys. Lett, Vol.93, 082105-1-082105-3, Aug. 2008. DOI |
12 | M-W Ha, S-C Lee, J-H Park, K-S Seo and M-K Han, "New Post-Annealing Method for Unpassivated AlGaN/GaN High Electron Mobility Transistors Employing XeCl Excimer Laser Pulses", Journal of the Korean Physical Society, Vol.47, S568-S571, Nov.2005. |
13 | S-J Kim, D-H Kim, J-M Kim, K-M Jung and T-G Kim, "Reduction of the Gate Leakage Current in Binary-trench-insulated Gate AlGaN/GaN Highelectron-mobility Transistors", Journal of the Korean Physical Society, Vol.55, pp.356-361, Jul.2009. 과학기술학회마을 DOI |
14 | M. V. Hove, S. Boulay, S. R. Bahl, S. Stoffels, X. Kang, D. Wellekens, K. Geens, A. Delabie, and S. Decoutere, "CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon" IEEE Electron Devices Letters, Vol.33, No.5, pp.667-669, Nov.2008. |
15 | J.W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, "AlGaN/GaN HEMT With 300-GHz ", IEEE Electron Device Letters, Vol. 31, No. 3, pp.195-197, 2010. DOI |
16 | V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M.A Khan, and I. Adesida, "AlGaN/GaN HEMTs on SiC With of Over 120 GHz", IEEE Electron Device Letters, Vol.23, No. 8, pp.455-457, Aug.2002. DOI ScienceOn |
17 | S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, and T. J. Jenkins, "High-Power Microwave GaN/AlGaN HEMT's on Semi-Insulating Silicon Carbide Substrates", IEEE Electron Device Letters, Vol.20, No. 4, pp.161-163, April.1999. DOI ScienceOn |
18 | J-H Lee, C. Park, K-S Im, and J-H Lee, "AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature", IEEE Transactions On Electron Devices, Vol.60, No.10, pp.3032-3036, Oct.2013. DOI |
19 | J. W. Chung, J. C. Roberts, E L. Piner, and T. Palacios, " Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs", IEEE Electron Devices Letters, Vol.29, No.11,pp.1196-1198, Nov.2008. DOI |
20 | Z. H. Liu, G. I. Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, S. C. Foo, and V. Sahmuganathan "Improved Linearity for Low-Noise Applications in 0.25- GaN MISHEMTs Using ALD as Gate Dielectric" IEEE Electron Devices Letters, Vol.31, No.8, pp.803-805, Aug.2010. DOI |
21 | Zhi Hong Liu, Geok Ing Ng, Subramaniam Arulkumaran, Ye Kyaw Thu Maung, Khoon Leng Teo, Siew Chuen Foo, Vicknesh Sahmuganathan, Tao Xu, and Chee How Lee "High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD" IEEE Electron Devices Letters, Vol.31, No.2, pp.96-98, Feb.2010. DOI |
22 | Z. H. Liu, G. I. Ng, S. Arulkumaran, Y. K. T. Maung, K. L. Teo, S. C. Foo, and V. Sahmuganathan "Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulatorsemiconductor high electron mobility transistor with atomic layer-deposited as gate insulator" Applied Physics Letters, Vol.95, 223501, (2009). DOI |
23 | P. D. Ye, B. Yang, K. K. Ng, and J. Bude, G. D. Wilk, S. Halder and J. C. M. Hwang, "GaN metaloxide-semiconductor high-electron-mobilitytransistor with atomic layer deposited as gate dielectric" Appl. Phys. Lett, Vol.86, pp. 063501-1-063501-3, Jan. 2005. DOI ScienceOn |