• 제목/요약/키워드: low power circuits

검색결과 619건 처리시간 0.023초

Low Drop-Out (LDO) Voltage Regulator with Improved Power Supply Rejection

  • Jang, Ho-Joon;Roh, Yong-Seong;Moon, Young-Jin;Park, Jeong-Pyo;Yoo, Chang-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권3호
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    • pp.313-319
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    • 2012
  • The power supply rejection (PSR) of low drop-out (LDO) voltage regulator is improved by employing an error amplifier (EA) which is configured so the power supply noise be cancelled at the output. The LDO regulator is implemented in a 0.13-${\mu}m$ standard CMOS technology. The external supply voltage level is 1.2-V and the output is 1.0-V while the load current can range from 0-mA to 50-mA. The power supply rejection is 46-dB, 49-dB, and 38-dB at DC, 2-MHz, and 10-MHz, respectively. The quiescent current consumption is 65-${\mu}A$.

Power Supply Circuits with Small size for Adiabatic Dynamic CMOS Logic Circuits

  • Sato, Masashi;Hashizume, Masaki;Yotuyanagi, Hiroyuki;Tamesada, Takeomi
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 ITC-CSCC -1
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    • pp.179-182
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    • 2000
  • Adiabatic dynamic CMOS logic circuits, which are called ADCL circuits, promise us to implement low power logic circuits. Since the power supply source for ADCL circuits had not been developed, we proposed a power supply circuit for them. It is shown experimentally that by using the power supply circuit ADCL circuits can work with lower power consumption than conventional static CMOS circuit. In this paper, the power supply circuit is improved so that the power consumption can be reduced. Also, it is shown by some experiments that by using the circuit, ADCL circuits can work with lower power consumption than before Improving.

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저전력 논리 회로 설계를 위한 커널에 바탕을 둔 precomputation 알고리듬 (A kernel-based precomputation scheme for low-power design fo combinational circuits)

  • 최익성;류승현
    • 전자공학회논문지C
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    • 제34C권11호
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    • pp.12-19
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    • 1997
  • In this paper, we present a logic synthesis algorithm for low powr design fo combinational circuits. The proposed algorithm reduces power dissipation by eliminating unnecessary signal transitions. The proposed algorithm restructures a given circuit by using a kernel as prediction logic in a precomputation-based scheme such that switching activity of circuit can be minimized. Experimental results show that the system is efficient for low power design of combinational circuits.

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다양한 매칭 회로들을 활용한 저잡음 증폭기 설계 연구 (Design of Low Noise Amplifier Utilizing Input and Inter Stage Matching Circuits)

  • Jo, Sung-Hun
    • 한국정보통신학회논문지
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    • 제25권6호
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    • pp.853-856
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    • 2021
  • In this paper, a low noise amplifier having high gain and low noise by using input and inter stage matching circuits has been designed. A current-reused two-stage common-source topology is adopted, which can obtain high gain and low power consumption. Deterioration of noise characteristics according to the source inductive degeneration matching is compensated by adopting additional matching circuits. Moreover trade-offs among noise, gain, linearity, impedance matching, and power dissipation have been considered. In this design, 0.18-mm CMOS process is employed for the simulation. The simulated results show that the designed low noise amplifier can provide high power gain and low noise characteristics.

나노 MOSFET 공정에서의 초저전압 NCL 회로 설계 (Design of Ultra Low-Voltage NCL Circuits in Nanoscale MOSFET Technology)

  • 홍우헌;김경기
    • 한국산업정보학회논문지
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    • 제17권4호
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    • pp.17-23
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    • 2012
  • 초저전력 설계나 에너지 수확 활용은 동적 전력과 정적 전력 사이의 균형을 이루는 점에 근접하는 문턱전압이하의 매우 낮은 전압에서 작동하는 디지털 시스템을 요구한다. 이런 동작 모드에서 일반적인 논리회로의 지연 변화는 매우 크게 된다. 따라서, 본 논문에서 MOSFET 나노 공정기술에서 전력소비를 줄이면서 여러 가지 공정 변이의 영향을 받지 않는 비동기 방식의 NCL (Null conventional logic)을 사용한 저전력 논리회로 설계 방법을 제안하고자 한다. 제안된 NCL 회로는 45nm의 공정기술에서 0.4V의 공급전압을 사용하였고, 각 NCL회로는 속도와 전력에 의해서 일반적인 동기식 회로와 비교되었다.

센서시스템에서의 저전력 비동기 설계를 위한 인터페이싱 회로 (A new interfacing circuit for low power asynchronous design in sensor systems)

  • 류정탁;홍원기;강병호;김경기
    • 한국산업정보학회논문지
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    • 제19권1호
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    • pp.61-67
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    • 2014
  • 센서 시스템과 같은 저전력 설계를 요구하는 시스템에서 기존의 동기방식의 회로는 낮은 전압에서 지연(delay)이 급격히 증가하여 시스템의 전체 성능을 유지할 수 없을 뿐만 아니라, 공정, 전압, 온도 변이 (PVT variation), 노화 등에 크게 영향을 받아서 올바른 동작을 기대할 수 없다. 따라서, 신뢰할 수 있는 초저전력 설계에서 비동기 회로가 스케일링 이슈를 해결할 수 있는 방법으로 최근 다시 고려되고 있다. 그러나, 디지털 시스템에서 동기회로를 NCL 회로로 모두 대체하는 것은 쉽지가 않기때문에 동기회로와 비동기 회로 사이의 연결이 꼭 필요하다. 본 논문에서는 동기회로와 비동기 회로를 연결할 수 있는 새로운 설계방법을 보이고, 0.18um 공정기술을 사용한 $4{\times}4$ 곱셈기를 사용해서 검증을 하였다.

결합 인덕터 및 에너지 회생 회로를 사용한 새로운 고 효율 ZVS AC-DC 승압 컨버터 (New High Efficiency Zero-Voltage-Switching AC-DC Boost Converter Using Coupled Inductor and Energy Recovery Circuit)

  • 박경수;김윤호
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제50권10호
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    • pp.501-507
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    • 2001
  • In this paper, new high-efficiency zero voltage switching (ZVS) AC-DC boost converter is proposed to achieve power factor correction by simplifing energy recovery circuit. A lot of high power factor correction circuits have been proposed and applied to increase input power factor and efficiency. Most of these circuits may obtain unity power factor and achieve sinusoidal current waveform with zero voltage or/and zero current switching. However, it is difficult for them to obtain low cost, small size, low weight, and low noise. The topology proposed to improve these problems can compact the devices in circuit and can achieve high efficiency ZVS AC-DC boost converter. Simulation and experimental results show that this topology is capable of obtaining high power factor and increasing the efficiency of the system.

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저전압용 CMOS 온-칩 기준 전압 및 전류 회로 (CMOS on-chip voltage and current reference circuits for low-voltage applications)

  • 김민정;이승훈
    • 전자공학회논문지C
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    • 제34C권4호
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    • pp.1-15
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    • 1997
  • This paper proposes CMOS on-chip voltage and current reference circuits that operate at supply voltages between 2.5V and 5.5V without using a vonventional bandgap voltage structure. The proposed reference circuits based on enhancement-type MOS transistors show low cost, compatibility with other on-chip MOS circuits, low-power consumption, and small-chip size. The prototype was implemented in a 0.6 um n-well single-poly double-metal CMOS process and occupies an active die area of $710 um \times 190 um$. The proposed voltage reference realizes a mean value of 0.97 V with a standard deviation of $\pm0.39 mV$, and a temperature coefficient of $8.2 ppm/^{\circ}C$ over an extended temeprature range from TEX>$-25^{\circ}C$ to $75^{\circ}C$. A measured PSRR (power supply rejection ratio) is about -67 dB at 50kHz.

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의료용 센서 네트워크를 위한 저전력 델타 시그마 디지털 주파수 합성기 설계 (A Low-Power Design of Delta-Sigma Based Digital Frequency Synthesizer for Bio Sensor Networks)

  • 배정남;김진영
    • 한국인터넷방송통신학회논문지
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    • 제17권5호
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    • pp.193-197
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    • 2017
  • 본 논문에서는 델타 시그마를 이용하여 고분해능의 주파수 튜닝 범위를 가지는 저전력 디지털 주파수 합성기를 제안한다. 의료 기기용 센서 장치는 배터리 사용 시간의 제약으로 인해 저전력, 고성능 RF (Radio Frequency) 트랜시버를 필요로 한다. 반도체 공정의 미세화로 인한 디지털 회로 설계 기법의 발전으로, 이전의 아날로그 회로 설계의 한계를 극복하고, 고성능의 집적화가 가능해 지고 있다. 따라서, 전력 소모를 줄이기 위해 디지털 회로 기반의 주파수 합성기를 설계했다. 높은 주파수 분해능을 가지기 위해 델타 시그마 변조기를 링 발진기에 적용하여, 소수부 튜닝을 구현했다. 모의실험을 통해 제안된 구조가 전력 및 분해능에서 우수한 성능을 보임을 확인하였다.

노화효과를 고려한 저전력 셀프 튜닝 디지털 시스템의 설계 (Design of a Low Power Self-tuning Digital System Considering Aging Effects)

  • 이진경;김경기
    • 대한임베디드공학회논문지
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    • 제13권3호
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    • pp.143-149
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    • 2018
  • It has become ever harder to design reliable circuits with each nanometer technology node; under normal operation conditions, a transistor device can be affected by various aging effects resulting in performance degradation and eventually design failure. The reliability (aging) effect has traditionally been the area of process engineers. However, in the future, even the smallest of variations can slow down a transistor's switching speed, and an aging device may not perform adequately at a very low voltage. Therefore, circuit designers need to consider these reliability effects in the early stages of design to make sure there are enough margins for circuits to function correctly over their entire lifetime. However, such an approach excessively increases the size and power dissipation of a system. As the impact of reliability, new techniques in designing aging-resilient circuits are necessary to reduce the impact of the aging stresses on performance, power, and yield or to predict the failure of a system. Therefore, in this paper, a novel low power on-chip self-tuning circuit considering the aging effects has been proposed.