• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.53-58
• /
• 2013

An innovative packaging solution, Flip Chip with Copper (Cu) Column bond on lead (BOL) Enhanced Process (fcCuBE$^{(R)}$) delivers a cost effective, high performance packaging solution over typical bond on capture pad (BOC) technology. These advantages include improved routing efficiency on the substrate top layer thus allowing conversion functionality; furthermore, package cost is lowered by means of reduced substrate layer count and removal of solder on pad (SOP). On the other hand, as electronic packaging technology develops to meet the miniaturization trend from consumer demand, reliability testing will become an important issue in advanced technology area. In particular, electromigration (EM) of flip chip bumps is an increasing reliability concern in the manufacturing of integrated circuit (IC) components and electronic systems. This paper presents the results on EM characteristics on BOL and BOC structures under electrical current stressing in order to investigate the comparison between two different typed structures. EM data was collected for over 7000 hours under accelerated conditions (temperatures: $125^{\circ}C$, $135^{\circ}C$, and $150^{\circ}C$ and stress current: 300 mA, 400 mA, and 500 mA). All samples have been tested without any failures, however, we attempted to find morphologies induced by EM effects through cross-sectional analysis and investigated the interfacial reaction characteristics between BOL and BOC structures under current stressing. EM damage was observed at the solder joint of BOC structure but the BOL structure did not show any damage from the effects of EM. The EM data indicates that the fcCuBE$^{(R)}$ BOL Cu column bump provides a significantly better EM reliability.

• Ceramist
• /
• v.21 no.4
• /
• pp.378-387
• /
• 2018

The optimal fabrication conditions for $Gd_{0.1}Ce_{0.9}O_{2-{\delta}}$(GDC) buffer layer and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LSCF) cathode on 1mol% $CeO_2-10mol%\;Sc_2O_3$ stabilized $ZrO_2$ (CeScSZ) electrolyte were investigated for application of IT-SOFCs. GDC buffer layer was used in order to prevent undesired chemical reactions between LSCF and CeScSZ. These experiments were carried out with $5{\times}5cm^2$ anode supported unit cells to investigate the tendencies of electrochemical performance, Microstructure development and interface reaction between LSCF/GDC/CeScSZ along with the variations of GDC buffer layer thickness, sintering temperatures of GDC and LSCF were checked, respectively. Electrochemical performance was analyzed by DC current-voltage measurement and AC impedance spectroscopy. Microstructure and interface reaction were investigated by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). Although the interfacial reaction between these materials could not be perfectly inhibited, We found that the cell, in which $6{\mu}m$ GDC interlayer sintered at $1200^{\circ}C$ and LSCF sintered at $1000^{\circ}C$ were applied, showed good interfacial adhesions and effective suppression of Sr, thereby resulting in fairly good performance with power density of $0.71W/cm^2$ at $800^{\circ}C$ and 0.7V.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.1
• /
• pp.15-20
• /
• 2004

The interfacial layer between the oxide film and the metal film according to RTP annealing temperature of metal film has been studied. Two types of oxides, BPSG and PETEOS, were used as a bottom layer under multi-layered metal films. We observed the interface between oxide and metal films using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Bonding failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal films above $650^{\circ}C$ RTP anneal. The phosphorus accumulation layer was observed at interface between BPSG oxide and metal films by AES and TEM measurements. On the other hand, bonding was always good in the sample using PETEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal films was improved when the sample was annealed below $650^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
• /
• v.7 no.3
• /
• pp.169-174
• /
• 1994

The reaction layer formed at interface between matrix and fiber has significant effects on the mechanical properties and behaviors of deformation m FRM. In this study, the mechanical properties and interfacial behaviors according to surface finishing on the fibers and according to heat treatment in FRM were investigated. FRM was fibricated by diffusion bonding method. In W/Al alloy composite and W/Al composite, W of which was coated with $WO_3$, the heat treatment was carried out thermal cycling method from 373K to 673K. In W/Al composite, W of which was coated with $WO_3$, growth of interface layer was hardly occured in spite of the increasing various thermal cycles. It was exhibited that oxidized W/Al composite were higher strength than non-oxidezed W/Al composite with the increasing thermal cycles. The compounds of fiber/matrix interface were analyzed into $WAl_{12}$, $WAl_7$, and $AlWO_3$, respectivly. Therefore the interfacial compounds of fiber/matrix seriously affected the mechanical properties and behaviors of deformation in FRM.

• Journal of Electrochemical Science and Technology
• /
• v.14 no.2
• /
• pp.162-173
• /
• 2023

Aqueous zinc-ion batteries are considered as promising alternatives to lithium-ion batteries for energy storage owing to their safety and cost efficiency. However, their lifespan is limited by the irreversibility of Zn anodes because of Zn dendrite growth and side reactions such as the hydrogen evolution reaction and corrosion during cycling. Herein, we present a strategy to restrict direct contact between the Zn anode and aqueous electrolyte by fabricating a protective layer on the surface of Zn foil via phosphidation method. The Zn₃(PO₄)₂ protective layer effectively suppresses Zn dendrite growth and side reactions in aqueous electrolytes. The electrochemical properties of the Zn₃(PO₄)₂@Zn anode, such as the overpotential, linear polarization resistance, and hydrogen generation reaction, indicate that the protective layer can suppress interfacial corrosion and improve the electrochemical stability compared to that of bare Zn by preventing direct contact between the electrolyte and the active sites of Zn. Remarkably, MnO₂ Zn₃(PO₄)₂@Zn exhibited enhanced reversibility owing to the formation a stable porous layer, which effectively inhibited vertical dendrite growth by inducing the uniform plating of Zn²⁺ ions underneath the formed layer.

• Environmental Engineering Research
• /
• v.24 no.3
• /
• pp.376-381
• /
• 2019

In this study, a poly(vinyl) alcohol/sodium alginate (PVA/SA) mixture was used to fabricate core-shell structured gel beads for autotrophic single-stage nitrogen removal (ASNR) using aerobic and anaerobic ammonia-oxidizing bacteria (AAOB and AnAOB, respectively). For stable ASNR process, the mechanical strength and oxygen penetration depth of the shell layer entrapping the AAOB are critical properties. The shell layer was constructed by an interfacial gelling reaction yielding thickness in the range of 2.01-3.63 mm, and a high PVA concentration of 12.5% resulted in the best mechanical strength of the shell layer. It was found that oxygen penetrated the shell layer at different depths depending on the PVA concentration, oxygen concentration in the bulk phase, and free ammonia concentration. The oxygen penetration depth was around $1,000{\mu}m$ when 8.0 mg/L dissolved oxygen was supplied from the bulk phase. This study reveals that the shell layer effectively protects the AnAOB from oxygen inhibition under the aerobic conditions because of the respiratory activity of the AAOB.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.3
• /
• pp.41-47
• /
• 2020

The effect of Co interlayer on the interfacial reliability of SiN_x/Co/Cu thin film structure for advanced Cu interconnects was systematically evaluated by using a double cantilever beam test. The interfacial adhesion energy of the SiN_x/Cu thin film structure was 0.90 J/㎡. This value of the SiN_x/Co/Cu thin film structure increased to 9.59 J/㎡.Measured interfacial adhesion energy of SiN_x/Co/Cu structure was around 10 times higher than SiN_x/Cu structure due to CoSi₂ reaction layer formation at SiN_x/Co interface, which was confirmed by X-ray photoelectron spectroscopy analysis. The interfacial adhesion energy of SiN_x/Co/Cu structure decreased sharply after post-annealing at 200℃ for 24 h due to Co oxidation at SiN_x/Co interface. Therefore, it is required to control the CoO and Co₃O₄ formation during the environmental storage of the SiN_x/Co/Cu thin film to achieve interfacial reliability for advanced Cu interconnections.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.2 s.35
• /
• pp.95-103
• /
• 2005

The interfacial reaction between 42Sn-58Bi solder (in wt.$\%$ unless specified otherwise) and electroless Ni-P/immersion Au has been investigated before and after thermal aging, with a focus on formation and growth of an intermetallic compound (IMC) layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 (bare Ni), 0.1, and $1{\mu}m$ was plated on the $5{\mu}m$ thick electroless Ni-P ($14{\~}15 at.\%$P) layer. Then, the 42Sn-58Bi solder balls were fabricated on three different UBM structures by screen-printing and pre-reflow. The $Ni_3Sn_4$ layer (IMC1) was formed at the joint interface after pre-reflow for all the three UBM structures. On aging at $125^{\circ}C$, a quaternary phase (IMC2) was observed above the $Ni_3Sn_4$ layer in the Au-containing UBM structures, which was identified as $Sn_{77}Ni{15}Bi_6Au_2$ (in at.$\%$). The thick $Sn_{77}Ni{15}Bi_6Au_2$ layer deteriorated the integrity of the solder joint and the shear strength of the solder bump was decreased by about $40\%$ compared with non-aged joints.

• Proceedings of the IEEK Conference
• /
• 2002.07a
• /
• pp.365-368
• /
• 2002

We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.72-72
• /
• 2010

Recent development of organic solar cell approaches the level of 8% power conversion efficiency by the introduction of new materials, improved material engineering, and more sophisticated device structures. As for interface engineering, various interlayer materials such as LiF, CaO, NaF, and KF have been utilized between Al electrode and active layer. Those materials lower the work function of cathode and interface barrier, protect the active layer, enhance charge collection efficiency, and induce active layer doping. However, the addition of another step of thin layer deposition could be a little complicated. Thus, on a typical solar cell structure of Al/P3HT:PCBM/PEDOT:PSS/ITO glass, we used Li:Al alloy electrode instead of Al to render a simple process. J-V measurement under dark and light illumination on the polymer solar cell using Li:Al cathode shows the improvement in electric properties such as decrease in leakage current and series resistance, and increase in circuit current density. This effective charge collection and electron transport correspond to lowered energy barrier for electron transport at the interface, which is measured by ultraviolet photoelectron spectroscopy. Indeed, through the measurement of secondary ion mass spectroscopy, the Li atoms turn out to be located mainly at the interface between polymer and Al metal. In addition, the chemical reaction between polymer and metal electrodes are measured by X-ray photoelectron spectroscopy.