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Annealing Effect on Adhesion Between Oxide Film and Metal Film  

Kim Eung Soo (Div. Digital Information Engineering, Pusan University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.1, 2004 , pp. 15-20 More about this Journal
Abstract
The interfacial layer between the oxide film and the metal film according to RTP annealing temperature of metal film has been studied. Two types of oxides, BPSG and PETEOS, were used as a bottom layer under multi-layered metal films. We observed the interface between oxide and metal films using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Bonding failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal films above $650^{\circ}C$ RTP anneal. The phosphorus accumulation layer was observed at interface between BPSG oxide and metal films by AES and TEM measurements. On the other hand, bonding was always good in the sample using PETEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal films was improved when the sample was annealed below $650^{\circ}C$.
Keywords
RTP anneal; BPSG; PETEOS; phosphorus; accumulation;
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