References
- T. C. Wang, Y. L. Cheng, Y. L. Wang, T. E. Hsieh, G. J. Hwang, and C. F. Chen, "Comparison of characteristics and integration of copper diffusion-barrier dielectrics", Thin Solid Films, 498, 36 (2006). https://doi.org/10.1016/j.tsf.2005.07.059
- J. K. Kim, H. O. Kang, W. J. Hwang, J. M. Yang, and Y. B. Park, "Effect of Post-Chemical-Mechanical Polishing Surface Treatments on the Interfacial Adhesion Energy between Cu and a Capping Layer", Jpn. J. Appl. Phys., 52, 10MC05 (2013). https://doi.org/10.7567/JJAP.52.10MC05
-
M. S. Jeong, J. K. Kim, H. O. Kang, W. J. Hwang, and Y. B. Park, "Effects of Wet Chemical Treatment and Thermal Cycle Conditions on the Interfacial Adhesion Energy of Cu/
$SiN_x$ thin Film Interfaces", J. Microelectric. Pack. Soc., 21(1), 45 (2014). - E. J. Jang, S. Hyun, H. J. Lee, and Y. B. Park, "Effect of Wet Pretreatment on Interfacial Adhesion Energy of Cu-Cu Thermocompression Bond for 3D IC Packages", J. Electron. Mater., 38(12), 2449 (2009). https://doi.org/10.1007/s11664-009-0942-9
- M. H. Lin, Y. L. Lin, K. P. Chang, K. C. Su, and T. Wang, "Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment", Microelectron. Reliab., 45, 1061 (2005). https://doi.org/10.1016/j.microrel.2004.11.055
- H. W. Yao, K. Y. Yiang, P. Justison, M. Rayasam, O. Aubel, and J. Poppe, "Stress migration model for Cu interconnect reliability analysis", J. Appl. Physic., 110, 073504 (2001). https://doi.org/10.1063/1.3644972
- C. K. Hu and R. Rosenberg, "Capping Layer Effects on Electromigration in Narrow Cu Lines", AIP Conference Proceedings, 741(1), 97 (2004).
- J. R. Lloyd, M. W. Lane, E. G. Liniger, C. K. Hu, T. M. Shaw, and R. Rosenberg, "Electromigration and adhesion", IEEE Transactions on Dev. & Mater. Reliab., 5(1), 113 (2005). https://doi.org/10.1109/TDMR.2005.846308
- C. C. Yang, P. Flaitz, B. Li, F. Chen, C. Christiansen, S. Y. Lee, P. Ma, and D. Edelstein, "Co capping layer Cu/low-k interconnect", Microelectronic Enginnering, 92, 79 (2012). https://doi.org/10.1016/j.mee.2011.04.017
- C. C. Yang, B. Li, H. Shobha, S. Nguyen, A. Grill, W. Ye, J. AuBuchon, M. Shek, and D. Edelstein, "In Situ Co/SiC(N,H) Capping Layers for Cu/Low-k Interconnects", Electron. Dev. Lett., 33(4), 588 (2012). https://doi.org/10.1109/LED.2012.2183850
- M. W. Lane, E. G. Liniger, and J. R. Lloyd, "Relationship between interfacial adhesion and electromigration in Cu metallization", J. Appl. Phys., 98, 1417 (2003).
- D. Priyadarshini, S. Nguyen, H. Shobha, S. Cohen, T. Shaw, E. Liniger, C. K. Hu, C. Parks, E. Adams, J. Burnham, A. H. Simon, G. Bonilla, A. Grill, D. Canaperi, D. Edelstein, D. Collins, M. Balseanu, M. Stolfi, and J. Ren, K. Shah, "Advanced metal and dielectric barrier cap films for Cu low k interconnects", Proc. IEEE International interconnect Technology Conference Advanced Metallization Conference, San Jose, CA, USA, 185 (2014).
- M. Lane, "Interface fracture", Annu. Rev. Mater. Res., 33, 29 (2003). https://doi.org/10.1146/annurev.matsci.33.012202.130440
- I. Lee, S. Kim, J. Yun, I. Park, and T. S. Kim, "Interfacial toughening of solute on processed Ag nanoparticle thin films by organic residuals", Nanotechnology, 23, 485704 (2012). https://doi.org/10.1088/0957-4484/23/48/485704
- S. I. Raider, R. Flitsch, J. A. Aboaf, and W. A. Pliskin, "Surface Oxidation of Silicon Nitride Film", J. Electrochem. Soc., 123(4), 560 (1976). https://doi.org/10.1149/1.2132877
- H. H. Kim, W. Han, H. S. Lee, B. G. Min, and B. J. Kim, "Preparation and characterization of silicon nitride (Si N)-coatedcarbon fibers and their effects on thermal properties in composites", Materials Science and Engineering: B, 200, 132 (2015). https://doi.org/10.1016/j.mseb.2015.07.001
- I. Platzman, R. Brener, H. Haick, and R. Tannenbaum, "Oxidation of Polycrystalline Copper Thin Films at Ambient Conditions", J. Phys. Chem., C112, 1101 (2008).
-
L. D. L. S. Valladares, D. H. Salinas, A. B. Dominguez, D. A. Najarro, S. I. Khondaker, T. Mitrelias, C. H. W. Barnes, J. A. Aguiar, and Y. Majima, "Crystallization and electrical resistivity of
$Cu_2$ O and CuO obtained by thermal oxidation of Cu thin films on$SiO_2$ /Si substrates", Thin Solid Films, 520, 6368 (2012). https://doi.org/10.1016/j.tsf.2012.06.043 -
J. J. Chang, C. P. Liu, T. E. Hsieh, and Y. L. Wang, "The study of diffusion and nucleation for
$CoSi_2$ formation by oxidemediated cobalt silicidation", Surf. Coat. Technol., 200, 3314 (2006). https://doi.org/10.1016/j.surfcoat.2005.07.044 - A. Sharma, S. Tripathi, and T. Shripathi, "X-ray photoelectron study of annealed Co thin film on Si surface", Applied Surface Science, 256, 530 (2009). https://doi.org/10.1016/j.apsusc.2009.08.007
- T. Nguyen, H. L. Ho, D. E. Kotecki, and T. D. Nguyen, "Reaction study of cobalt and silicon nitride", J. Mater. Res., 8(9), 2354 (1993). https://doi.org/10.1557/JMR.1993.2354